{"id":"https://openalex.org/W2077562037","doi":"https://doi.org/10.1116/1.1924473","title":"Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films","display_name":"Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films","publication_year":2005,"publication_date":"2005-06-28","ids":{"openalex":"https://openalex.org/W2077562037","doi":"https://doi.org/10.1116/1.1924473","mag":"2077562037"},"language":"en","primary_location":{"id":"doi:10.1116/1.1924473","doi":"https://doi.org/10.1116/1.1924473","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.1924473","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068500862","display_name":"Han-Chang Pan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210128167","display_name":"National Science and Technology Council","ror":"https://ror.org/02kv4zf79","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167"]},{"id":"https://openalex.org/I4405282297","display_name":"National Center for Instrumentation Research","ror":"https://ror.org/05mraaf88","country_code":"TW","type":"facility","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867","https://openalex.org/I4405282297"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Han-Chang Pan","raw_affiliation_strings":["National Science Council Precision Instrument Development Center, , Hsinchu, Taiwan, Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Science Council Precision Instrument Development Center, , Hsinchu, Taiwan, Republic of China","institution_ids":["https://openalex.org/I4210128167","https://openalex.org/I4405282297"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007701238","display_name":"Ming\u2010Hua Shiao","orcid":"https://orcid.org/0000-0001-6518-3651","observed_orcids":["https://orcid.org/0000-0001-6518-3651"]},"institutions":[{"id":"https://openalex.org/I4210128167","display_name":"National Science and Technology Council","ror":"https://ror.org/02kv4zf79","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167"]},{"id":"https://openalex.org/I4405282297","display_name":"National Center for Instrumentation Research","ror":"https://ror.org/05mraaf88","country_code":"TW","type":"facility","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867","https://openalex.org/I4405282297"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ming-Hua Shiao","raw_affiliation_strings":["National Science Council Precision Instrument Development Center, , Hsinchu, Taiwan, Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Science Council Precision Instrument Development Center, , Hsinchu, Taiwan, Republic of China","institution_ids":["https://openalex.org/I4210128167","https://openalex.org/I4405282297"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100847677","display_name":"Chien-Ying Su","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210128167","display_name":"National Science and Technology Council","ror":"https://ror.org/02kv4zf79","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167"]},{"id":"https://openalex.org/I4405282297","display_name":"National Center for Instrumentation Research","ror":"https://ror.org/05mraaf88","country_code":"TW","type":"facility","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867","https://openalex.org/I4405282297"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chien-Ying Su","raw_affiliation_strings":["National Science Council Precision Instrument Development Center, , Hsinchu, Taiwan, Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Science Council Precision Instrument Development Center, , Hsinchu, Taiwan, Republic of China","institution_ids":["https://openalex.org/I4210128167","https://openalex.org/I4405282297"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103910035","display_name":"Chien-Nan Hsiao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210128167","display_name":"National Science and Technology Council","ror":"https://ror.org/02kv4zf79","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167"]},{"id":"https://openalex.org/I4405282297","display_name":"National Center for Instrumentation Research","ror":"https://ror.org/05mraaf88","country_code":"TW","type":"facility","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867","https://openalex.org/I4405282297"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chien-Nan Hsiao","raw_affiliation_strings":["National Science Council Precision Instrument Development Center, , Hsinchu, Taiwan, Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Science Council Precision Instrument Development Center, , Hsinchu, Taiwan, Republic of China","institution_ids":["https://openalex.org/I4210128167","https://openalex.org/I4405282297"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.8135,"has_fulltext":false,"cited_by_count":54,"citation_normalized_percentile":{"value":0.92695131,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"23","issue":"4","first_page":"1187","last_page":"1191"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.7401999831199646,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.7401999831199646,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.25099998712539673,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13889","display_name":"Advanced Materials and Semiconductor Technologies","score":0.0013000000035390258,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sputtering-parameters","display_name":"sputtering parameters","score":0.9430000185966492},{"id":"https://openalex.org/keywords/film-thickness","display_name":"film thickness","score":0.9049999713897705},{"id":"https://openalex.org/keywords/o2-ar-ratio","display_name":"O2/Ar ratio","score":0.8999999761581421},{"id":"https://openalex.org/keywords/sputter-power","display_name":"sputter power","score":0.9810000061988831},{"id":"https://openalex.org/keywords/electrical-resistivity","display_name":"electrical resistivity","score":0.9509999752044678},{"id":"https://openalex.org/keywords/optical-transmittance","display_name":"optical transmittance","score":0.9769999980926514},{"id":"https://openalex.org/keywords/band-gap","display_name":"band gap","score":0.746999979019165},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"surface roughness","score":0.9100000262260437},{"id":"https://openalex.org/keywords/oxygen-deficiency","display_name":"oxygen deficiency","score":0.8600000143051147},{"id":"https://openalex.org/keywords/amorphous-films","display_name":"amorphous films","score":0.7149999737739563},{"id":"https://openalex.org/keywords/room-temperature-deposition","display_name":"room-temperature deposition","score":0.7919999957084656}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8651423454284668},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.7281770706176758},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.6853512525558472},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.667780339717865},{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.6567111611366272},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5915932655334473},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.5904854536056519},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5570745468139648},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.5506866574287415},{"id":"https://openalex.org/C61427134","wikidata":"https://www.wikidata.org/wiki/Q847609","display_name":"Sputter deposition","level":4,"score":0.4979686737060547},{"id":"https://openalex.org/C150493377","wikidata":"https://www.wikidata.org/wiki/Q1427863","display_name":"Transmittance","level":2,"score":0.4664174020290375},{"id":"https://openalex.org/C547737533","wikidata":"https://www.wikidata.org/wiki/Q696","display_name":"Argon","level":2,"score":0.4472000002861023},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.42934340238571167},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.399527907371521},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20721617341041565},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.11058929562568665},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.0770825743675232},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.05661013722419739},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.1924473","doi":"https://doi.org/10.1116/1.1924473","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.1924473","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1502334508","https://openalex.org/W1965625456","https://openalex.org/W1971738258","https://openalex.org/W1979803402","https://openalex.org/W1987111397","https://openalex.org/W1992561482","https://openalex.org/W2006346629","https://openalex.org/W2017633242","https://openalex.org/W2038402371","https://openalex.org/W2041571219","https://openalex.org/W2046757329","https://openalex.org/W2063660264","https://openalex.org/W2064452617","https://openalex.org/W2065730012","https://openalex.org/W2068067576","https://openalex.org/W2075273154","https://openalex.org/W2078562056","https://openalex.org/W2091471005","https://openalex.org/W2118495163","https://openalex.org/W2138948765"],"related_works":["https://openalex.org/W3094277601","https://openalex.org/W2004394190","https://openalex.org/W1998777785","https://openalex.org/W2388703580","https://openalex.org/W2352871034","https://openalex.org/W4234230801","https://openalex.org/W2382355618","https://openalex.org/W2365757577","https://openalex.org/W2391354048","https://openalex.org/W2010108627"],"abstract_inverted_index":{"The":[0,65],"zinc":[1],"doped":[2],"indium":[3],"oxide":[4],"(IZO)":[5],"films":[6,85,96,115,131],"deposited":[7],"with":[8,116],"various":[9],"sputter":[10,27],"parameters":[11],"such":[12],"as,":[13],"film":[14,42,72,79,92],"thickness":[15,80],"ranging":[16,21,29],"from":[17,22,30],"200to500nm,":[18],"O2\u2215Ar":[19,119],"ratio":[20,120],"0%":[23],"to":[24,82],"12%,":[25],"and":[26,55,103,135],"power":[28],"100to250W":[31],"was":[32,53,63,73],"studied":[33],"in":[34,47,59,100,137],"this":[35],"work.":[36],"For":[37],"a":[38,138],"200nm":[39],"thick":[40],"IZO":[41,71,84,95,114,130],"grown":[43],"at":[44],"room":[45],"temperature":[46],"pure":[48],"argon":[49],"atmosphere,":[50],"the":[51,56,60,78,83,94,101,113,129],"resistivity":[52,102],"2.4\u00d710\u22124\u03a9cm":[54],"average":[57],"transmittance":[58],"visible":[61],"region":[62],"80%.":[64],"root":[66],"mean":[67],"square":[68],"roughness":[69],"of":[70,77,118],"around":[74],"0.4nm":[75],"regardless":[76],"due":[81],"exhibiting":[86],"an":[87,98],"amorphous":[88],"structure.":[89],"With":[90],"increasing":[91],"thickness,":[93],"showed":[97],"increase":[99],"energy":[104,126],"band":[105],"gap.":[106],"X-ray":[107],"photoelectron":[108],"spectroscopy":[109],"analysis":[110],"suggests":[111],"that":[112],"reduction":[117],"possess":[121],"two":[122],"splitting":[123],"O1s":[124],"binding":[125],"levels,":[127],"suggesting":[128],"were":[132],"oxygen":[133],"deficient":[134],"resulted":[136],"lower":[139],"resistivity.":[140]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2025-10-10T00:00:00"}