{"id":"https://openalex.org/W2074577451","doi":"https://doi.org/10.1016/s0038-1101(96)00112-8","title":"An improved high frequency C-V method for interface state analysis on MIS structures","display_name":"An improved high frequency C-V method for interface state analysis on MIS structures","publication_year":1997,"publication_date":"1997-04-01","ids":{"openalex":"https://openalex.org/W2074577451","doi":"https://doi.org/10.1016/s0038-1101(96)00112-8","mag":"2074577451"},"language":"en","primary_location":{"id":"doi:10.1016/s0038-1101(96)00112-8","doi":"https://doi.org/10.1016/s0038-1101(96)00112-8","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0038-1101(96)00112-8","pdf_url":null,"source":{"id":"https://openalex.org/S77418581","display_name":"Solid-State Electronics","issn_l":"0038-1101","issn":["0038-1101","1879-2405"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solid-State Electronics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113550288","display_name":"A. Koukab","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102475099","display_name":"Sup\u00e9lec","ror":"https://ror.org/00n7gwn90","country_code":"FR","type":"education","lineage":["https://openalex.org/I102475099","https://openalex.org/I277688954","https://openalex.org/I4210107720"]},{"id":"https://openalex.org/I4405264049","display_name":"Universit\u00e9 Paul Verlaine - Metz","ror":"https://ror.org/00t8qmx52","country_code":"FR","type":"education","lineage":["https://openalex.org/I4405264049","https://openalex.org/I90183372"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A Koukab","raw_affiliation_strings":["LICM/CLOES-Sup\u00e9lec, University of Metz, 2 rue E. Belin, 57078 Metz Cedex 3, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"LICM/CLOES-Sup\u00e9lec, University of Metz, 2 rue E. Belin, 57078 Metz Cedex 3, France","institution_ids":["https://openalex.org/I102475099","https://openalex.org/I4405264049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108777786","display_name":"A. Bath","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102475099","display_name":"Sup\u00e9lec","ror":"https://ror.org/00n7gwn90","country_code":"FR","type":"education","lineage":["https://openalex.org/I102475099","https://openalex.org/I277688954","https://openalex.org/I4210107720"]},{"id":"https://openalex.org/I4405264049","display_name":"Universit\u00e9 Paul Verlaine - Metz","ror":"https://ror.org/00t8qmx52","country_code":"FR","type":"education","lineage":["https://openalex.org/I4405264049","https://openalex.org/I90183372"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A Bath","raw_affiliation_strings":["LICM/CLOES-Sup\u00e9lec, University of Metz, 2 rue E. Belin, 57078 Metz Cedex 3, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"LICM/CLOES-Sup\u00e9lec, University of Metz, 2 rue E. Belin, 57078 Metz Cedex 3, France","institution_ids":["https://openalex.org/I102475099","https://openalex.org/I4405264049"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065625221","display_name":"Etienne Losson","orcid":"https://orcid.org/0000-0002-3324-3813","observed_orcids":["https://orcid.org/0000-0002-3324-3813"]},"institutions":[{"id":"https://openalex.org/I102475099","display_name":"Sup\u00e9lec","ror":"https://ror.org/00n7gwn90","country_code":"FR","type":"education","lineage":["https://openalex.org/I102475099","https://openalex.org/I277688954","https://openalex.org/I4210107720"]},{"id":"https://openalex.org/I4405264049","display_name":"Universit\u00e9 Paul Verlaine - Metz","ror":"https://ror.org/00t8qmx52","country_code":"FR","type":"education","lineage":["https://openalex.org/I4405264049","https://openalex.org/I90183372"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"E Losson","raw_affiliation_strings":["LICM/CLOES-Sup\u00e9lec, University of Metz, 2 rue E. Belin, 57078 Metz Cedex 3, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"LICM/CLOES-Sup\u00e9lec, University of Metz, 2 rue E. Belin, 57078 Metz Cedex 3, France","institution_ids":["https://openalex.org/I102475099","https://openalex.org/I4405264049"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2410,"currency":"USD","value_usd":2410},"apc_paid":null,"fwci":3.0052,"has_fulltext":false,"cited_by_count":33,"citation_normalized_percentile":{"value":0.90098328,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"41","issue":"4","first_page":"635","last_page":"641"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9824000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9824000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.012900000438094139,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.000699999975040555,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/metal-insulator-semiconductor-structures","display_name":"metal-insulator-semiconductor structures","score":0.8640000224113464},{"id":"https://openalex.org/keywords/capacitance-voltage-measurements","display_name":"capacitance-voltage measurements","score":0.800000011920929},{"id":"https://openalex.org/keywords/surface-band-bending","display_name":"surface band bending","score":0.9900000095367432},{"id":"https://openalex.org/keywords/interface-trap-density","display_name":"interface trap density","score":0.9800000190734863},{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"indium phosphide","score":0.8140000104904175},{"id":"https://openalex.org/keywords/deep-level-transient-spectroscopy","display_name":"deep level transient spectroscopy","score":0.8920000195503235},{"id":"https://openalex.org/keywords/dielectric-traps","display_name":"dielectric traps","score":0.3919999897480011}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.8046401739120483},{"id":"https://openalex.org/C19181183","wikidata":"https://www.wikidata.org/wiki/Q4854235","display_name":"Band bending","level":2,"score":0.6287326812744141},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.6131566762924194},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5758633613586426},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5203982591629028},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4912094473838806},{"id":"https://openalex.org/C87210426","wikidata":"https://www.wikidata.org/wiki/Q1072476","display_name":"Bending","level":2,"score":0.48465973138809204},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.41212227940559387},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.4111076593399048},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3773535490036011},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.27241361141204834},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1305125653743744},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.07371249794960022},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C196806460","wikidata":"https://www.wikidata.org/wiki/Q188603","display_name":"Capillary action","level":2,"score":0.0},{"id":"https://openalex.org/C28413391","wikidata":"https://www.wikidata.org/wiki/Q785542","display_name":"Capillary number","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0038-1101(96)00112-8","doi":"https://doi.org/10.1016/s0038-1101(96)00112-8","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0038-1101(96)00112-8","pdf_url":null,"source":{"id":"https://openalex.org/S77418581","display_name":"Solid-State Electronics","issn_l":"0038-1101","issn":["0038-1101","1879-2405"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solid-State Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1983840242","https://openalex.org/W1987911907","https://openalex.org/W1997946011","https://openalex.org/W2002765787","https://openalex.org/W2014706523","https://openalex.org/W2046565351","https://openalex.org/W2058170601","https://openalex.org/W2079471989","https://openalex.org/W2086925140"],"related_works":["https://openalex.org/W2083192081","https://openalex.org/W4387019738","https://openalex.org/W1989066125","https://openalex.org/W1968107788","https://openalex.org/W4315432678","https://openalex.org/W2085803511","https://openalex.org/W2184856625","https://openalex.org/W2077665227","https://openalex.org/W2061077245","https://openalex.org/W2007633062"],"abstract_inverted_index":null,"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}