{"id":"https://openalex.org/W2074136209","doi":"https://doi.org/10.1134/s106378261407015x","title":"Features of electron transport in relaxed Si/Si1 \u2212 x Ge x transistor heterostructures with a high doping level","display_name":"Features of electron transport in relaxed Si/Si1 \u2212 x Ge x transistor heterostructures with a high doping level","publication_year":2014,"publication_date":"2014-07-01","ids":{"openalex":"https://openalex.org/W2074136209","doi":"https://doi.org/10.1134/s106378261407015x","mag":"2074136209"},"language":"en","primary_location":{"id":"doi:10.1134/s106378261407015x","doi":"https://doi.org/10.1134/s106378261407015x","is_oa":false,"landing_page_url":"https://doi.org/10.1134/s106378261407015x","pdf_url":null,"source":{"id":"https://openalex.org/S66392791","display_name":"Semiconductors","issn_l":"1063-7826","issn":["1063-7826","1090-6479"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-d","jufo-1","norway-1","poland-70"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductors","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110144111","display_name":"M. L. Orlov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I4210138365","display_name":"Nizhny Novgorod State Technical University","ror":"https://ror.org/037d0vf92","country_code":"RU","type":"education","lineage":["https://openalex.org/I4210138365"]},{"id":"https://openalex.org/I4210144079","display_name":"Institute for Physics of Microstructures","ror":"https://ror.org/03mzbmf11","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I4210144079"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"M. L. Orlov","raw_affiliation_strings":["Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia","Nizhni Novgorod State Technical University, Nizhni Novgorod, 603950, Russia","Russian Academy of Sciences"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210144079"]},{"raw_affiliation_string":"Nizhni Novgorod State Technical University, Nizhni Novgorod, 603950, Russia","institution_ids":["https://openalex.org/I4210138365"]},{"raw_affiliation_string":"Russian Academy of Sciences","institution_ids":["https://openalex.org/I1313323035"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111534450","display_name":"Zsolt Horv\u00e1th","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I103356709","display_name":"Obuda University","ror":"https://ror.org/00ax71d21","country_code":"HU","type":"education","lineage":["https://openalex.org/I103356709"]}],"countries":["HU"],"is_corresponding":false,"raw_author_name":"Zs. J. Horvath","raw_affiliation_strings":["Institute of Microelectronics and Technology, Obuda University, Budapest, Hungary","\u00d3buda University;"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics and Technology, Obuda University, Budapest, Hungary","institution_ids":["https://openalex.org/I103356709"]},{"raw_affiliation_string":"\u00d3buda University;","institution_ids":["https://openalex.org/I103356709"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111969905","display_name":"N. L. Ivina","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210138365","display_name":"Nizhny Novgorod State Technical University","ror":"https://ror.org/037d0vf92","country_code":"RU","type":"education","lineage":["https://openalex.org/I4210138365"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"N. L. Ivina","raw_affiliation_strings":["Nizhni Novgorod State Technical University, Nizhni Novgorod, 603950, Russia","Nizhni Novgorod State Technical University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nizhni Novgorod State Technical University, Nizhni Novgorod, 603950, Russia","institution_ids":["https://openalex.org/I4210138365"]},{"raw_affiliation_string":"Nizhni Novgorod State Technical University","institution_ids":["https://openalex.org/I4210138365"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054995576","display_name":"Vladimir N. Neverov","orcid":"https://orcid.org/0000-0002-3723-3321","observed_orcids":["https://orcid.org/0000-0002-3723-3321"]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I4210102261","display_name":"M.N. Mikheev Institute of Metal Physics","ror":"https://ror.org/01azrym08","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I4210102261","https://openalex.org/I4210119369"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"V. N. Neverov","raw_affiliation_strings":["Institute for Physics of Metals, Russian Academy of Sciences, Ural Branch, Yekaterinburg, 620990, Russia","Russian Academy of Sciences"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Physics of Metals, Russian Academy of Sciences, Ural Branch, Yekaterinburg, 620990, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210102261"]},{"raw_affiliation_string":"Russian Academy of Sciences","institution_ids":["https://openalex.org/I1313323035"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110690679","display_name":"Lev K. Orlov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I4210138365","display_name":"Nizhny Novgorod State Technical University","ror":"https://ror.org/037d0vf92","country_code":"RU","type":"education","lineage":["https://openalex.org/I4210138365"]},{"id":"https://openalex.org/I4210144079","display_name":"Institute for Physics of Microstructures","ror":"https://ror.org/03mzbmf11","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I4210144079"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"L. K. Orlov","raw_affiliation_strings":["Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia","Nizhni Novgorod State Technical University, Nizhni Novgorod, 603950, Russia","Russian Academy of Sciences"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210144079"]},{"raw_affiliation_string":"Nizhni Novgorod State Technical University, Nizhni Novgorod, 603950, Russia","institution_ids":["https://openalex.org/I4210138365"]},{"raw_affiliation_string":"Russian Academy of Sciences","institution_ids":["https://openalex.org/I1313323035"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5110144111"],"corresponding_institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210138365","https://openalex.org/I4210144079"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"48","issue":"7","first_page":"942","last_page":"953"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.899399995803833,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.899399995803833,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.042399998754262924,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.023000000044703484,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/si-sige-heterostructures","display_name":"Si/SiGe heterostructures","score":0.9150000214576721},{"id":"https://openalex.org/keywords/electron-transport","display_name":"electron transport","score":0.8920000195503235},{"id":"https://openalex.org/keywords/two-dimensional-electron-gas","display_name":"two-dimensional electron gas","score":0.7689999938011169},{"id":"https://openalex.org/keywords/elastic-stress-relaxation","display_name":"elastic stress relaxation","score":0.7860000133514404},{"id":"https://openalex.org/keywords/heavy-doping","display_name":"heavy doping","score":0.6359999775886536},{"id":"https://openalex.org/keywords/magnetotransport","display_name":"magnetotransport","score":0.8040000200271606},{"id":"https://openalex.org/keywords/interlayer-tunneling","display_name":"interlayer tunneling","score":0.8109999895095825},{"id":"https://openalex.org/keywords/quantum-wells","display_name":"quantum wells","score":0.7229999899864197},{"id":"https://openalex.org/keywords/potential-barrier","display_name":"potential barrier","score":0.5130000114440918},{"id":"https://openalex.org/keywords/electron-distribution","display_name":"electron distribution","score":0.42500001192092896},{"id":"https://openalex.org/keywords/low-temperature-electrical-conductivity","display_name":"low-temperature conductivity","score":0.5070000290870667}],"concepts":[{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.7599223852157593},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.7433044910430908},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7303255200386047},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6759747862815857},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5766856074333191},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.558586835861206},{"id":"https://openalex.org/C201966971","wikidata":"https://www.wikidata.org/wiki/Q844922","display_name":"Rectangular potential barrier","level":2,"score":0.5157830715179443},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.4567190408706665},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.41187137365341187},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.18277913331985474},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08704739809036255},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.08396479487419128},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1134/s106378261407015x","doi":"https://doi.org/10.1134/s106378261407015x","is_oa":false,"landing_page_url":"https://doi.org/10.1134/s106378261407015x","pdf_url":null,"source":{"id":"https://openalex.org/S66392791","display_name":"Semiconductors","issn_l":"1063-7826","issn":["1063-7826","1090-6479"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-d","jufo-1","norway-1","poland-70"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductors","raw_type":"journal-article"},{"id":"pmh:oai:real.mtak.hu:44009","doi":null,"is_oa":false,"landing_page_url":"http://real.mtak.hu/44009/1/Features_art3A10.11342FS106378261407015X_u.pdf","pdf_url":"http://real.mtak.hu/44009/1/Features_art3A10.11342FS106378261407015X_u.pdf","source":{"id":"https://openalex.org/S4306400081","display_name":"Repository of the Academy's Library (Library of the Hungarian Academy of Sciences)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4210140733","host_organization_name":"Library and Information Centre of the Hungarian Academy of Sciences","host_organization_lineage":["https://openalex.org/I4210140733"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1523366136","https://openalex.org/W1964692200","https://openalex.org/W1968654383","https://openalex.org/W1974389225","https://openalex.org/W1977894028","https://openalex.org/W1981513728","https://openalex.org/W1990012812","https://openalex.org/W1998503438","https://openalex.org/W1999876438","https://openalex.org/W2001633348","https://openalex.org/W2028596139","https://openalex.org/W2033134852","https://openalex.org/W2039344789","https://openalex.org/W2066282224","https://openalex.org/W2073170268","https://openalex.org/W2074040881","https://openalex.org/W2074114301","https://openalex.org/W2078072449","https://openalex.org/W2097334699","https://openalex.org/W2145377982","https://openalex.org/W2170379774","https://openalex.org/W2171743727"],"related_works":["https://openalex.org/W1990012812","https://openalex.org/W2031025202","https://openalex.org/W2006812897","https://openalex.org/W2008950477","https://openalex.org/W2046261966","https://openalex.org/W4317792687","https://openalex.org/W2065178438","https://openalex.org/W2134758584","https://openalex.org/W2080611158","https://openalex.org/W7025552499"],"abstract_inverted_index":{"The":[0,154,197],"low-temperature":[1],"electrical":[2],"and":[3,69,87,103,149,175],"magnetotransport":[4],"characteristics":[5,104,121,190],"of":[6,44,55,99,105,122,134,142,146,156,170,186,191,201,216],"partially":[7],"relaxed":[8],"Si/Si1":[9],"\u2212":[10,219],"x":[11,13,94,220,222],"Ge":[12,221],"heterostructures":[14],"with":[15,83,93],"an":[16,21],"electron":[17,34,71],"conduction":[18,177],"channel":[19,211],"in":[20,36,49,58,79,110,137,179,207,244],"elastically":[22],"strained":[23],"nanoscale":[24],"silicon":[25],"layer":[26,85,113,250],"are":[27,77,114,226],"investigated.":[28],"It":[29,116],"is":[30,60,117],"demonstrated":[31],"that":[32,119],"the":[33,37,45,50,53,64,67,70,74,91,97,100,106,111,120,123,131,135,140,143,151,162,168,173,180,184,187,192,195,204,208,213,217,234,239,245,249],"gas":[35],"system":[38,51],"exhibits":[39],"2D":[40,174,205],"properties.":[41],"A":[42],"dependence":[43],"conductivity":[46],"along":[47],"layers":[48,76],"on":[52,130,139,150],"degree":[54,141],"elastic-stress":[56],"relaxation":[57,145],"it":[59],"observed.":[61],"To":[62],"understand":[63],"observed":[65,237],"regularities,":[66],"potential":[68,101,124,231],"distribution":[72],"over":[73],"structure":[75,92],"calculated":[78],"detail":[80],"for":[81,238],"samples":[82,193],"different":[84],"strains":[86],"doping":[88,152],"levels.":[89],"For":[90],"=":[95],"0.25,":[96],"parameters":[98,133],"barrier":[102,160,232],"quantum":[107],"well":[108],"formed":[109,125],"Si":[112,209],"estimated.":[115],"established":[118],"near":[126,161,233],"interfaces":[127],"strongly":[128],"depend":[129],"initial":[132],"system,":[136],"particular,":[138],"plastic":[144],"elastic":[147],"stresses":[148],"level.":[153],"formation":[155],"a":[157,229],"thin":[158],"tunneling-transparent":[159,230],"upper":[163],"interface":[164],"can":[165],"lead":[166],"to":[167,212,248],"redistribution":[169],"electrons":[171],"between":[172],"3D":[176,214],"channels":[178],"structure,":[181],"which":[182,225],"ensures":[183],"spread":[185],"measured":[188],"transport":[189,210,243],"during":[194,242],"measurements.":[196],"interlayer":[198],"tunneling":[199],"transitions":[200],"carriers":[202],"from":[203],"state":[206,215],"Si1":[218],"crystal":[223],"matrix,":[224],"separated":[227],"by":[228],"heterointerface,":[235],"were":[236],"first":[240],"time":[241],"direction":[246],"transverse":[247],"plane.":[251]},"counts_by_year":[],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2016-06-24T00:00:00"}