{"id":"https://openalex.org/W2072590732","doi":"https://doi.org/10.1063/1.99242","title":"Very shallow p+-n junction formation by low-energy BF+2 ion implantation into crystalline and germanium preamorphized silicon","display_name":"Very shallow p+-n junction formation by low-energy BF+2 ion implantation into crystalline and germanium preamorphized silicon","publication_year":1988,"publication_date":"1988-03-21","ids":{"openalex":"https://openalex.org/W2072590732","doi":"https://doi.org/10.1063/1.99242","mag":"2072590732"},"language":"en","primary_location":{"id":"doi:10.1063/1.99242","doi":"https://doi.org/10.1063/1.99242","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.99242","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5026541877","display_name":"Mehmet C. \u00d6zt\u00fcrk","orcid":"https://orcid.org/0000-0003-3922-9411","observed_orcids":["https://orcid.org/0000-0003-3922-9411"]},"institutions":[{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. C. Ozturk","raw_affiliation_strings":["North Carolina State University, Electrical and Computer Engineering Department, Raleigh, North Carolina 27695-7911"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"North Carolina State University, Electrical and Computer Engineering Department, Raleigh, North Carolina 27695-7911","institution_ids":["https://openalex.org/I137902535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111970676","display_name":"J. J. Wortman","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. J. Wortman","raw_affiliation_strings":["North Carolina State University, Electrical and Computer Engineering Department, Raleigh, North Carolina 27695-7911"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"North Carolina State University, Electrical and Computer Engineering Department, Raleigh, North Carolina 27695-7911","institution_ids":["https://openalex.org/I137902535"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006448685","display_name":"Richard B. Fair","orcid":"https://orcid.org/0000-0002-6728-1199","observed_orcids":["https://orcid.org/0000-0002-6728-1199"]},"institutions":[{"id":"https://openalex.org/I4210133640","display_name":"MCNC Research and Development Institute","ror":"https://ror.org/042awg277","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210133640"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. B. Fair","raw_affiliation_strings":["Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709","institution_ids":["https://openalex.org/I4210133640"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":8.3312,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.98150127,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":null,"biblio":{"volume":"52","issue":"12","first_page":"963","last_page":"965"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.8310999870300293,"subfield":{"id":"https://openalex.org/subfields/2206","display_name":"Computational Mechanics"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.8310999870300293,"subfield":{"id":"https://openalex.org/subfields/2206","display_name":"Computational Mechanics"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.09709999710321426,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0608999989926815,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/shallow-p-n-junctions","display_name":"shallow p-n junctions","score":0.8659999966621399},{"id":"https://openalex.org/keywords/bf2-ion-implantation","display_name":"BF2 implantation","score":0.8040000200271606},{"id":"https://openalex.org/keywords/low-energy-ion-implantation","display_name":"low-energy ion implantation","score":0.8379999995231628},{"id":"https://openalex.org/keywords/boron-diffusion","display_name":"boron diffusion","score":0.9769999980926514},{"id":"https://openalex.org/keywords/junction-depth","display_name":"junction depth","score":0.6570000052452087},{"id":"https://openalex.org/keywords/rapid-thermal-annealing","display_name":"rapid thermal annealing","score":0.9200000166893005},{"id":"https://openalex.org/keywords/dopant-activation","display_name":"dopant activation","score":0.7590000033378601},{"id":"https://openalex.org/keywords/channeling","display_name":"channeling","score":0.5099999904632568},{"id":"https://openalex.org/keywords/end-of-range-damage","display_name":"end-of-range damage","score":0.7570000290870667},{"id":"https://openalex.org/keywords/surface-damage","display_name":"surface damage","score":0.6579999923706055}],"concepts":[{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.844821572303772},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7824227809906006},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7254957556724548},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.7238115072250366},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.5621844530105591},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.5040280222892761},{"id":"https://openalex.org/C2780081452","wikidata":"https://www.wikidata.org/wiki/Q5297293","display_name":"Dopant Activation","level":4,"score":0.48530691862106323},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4836386442184448},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.48005494475364685},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.39725589752197266},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.33179283142089844},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.3110846281051636},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.24522271752357483},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07856965065002441},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.99242","doi":"https://doi.org/10.1063/1.99242","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.99242","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1977872078","https://openalex.org/W1978866341","https://openalex.org/W2004518789","https://openalex.org/W2007051384","https://openalex.org/W2030012712","https://openalex.org/W2039485140","https://openalex.org/W2132694847"],"related_works":["https://openalex.org/W1974573422","https://openalex.org/W2145628928","https://openalex.org/W2038218317","https://openalex.org/W2029443791","https://openalex.org/W1998603192","https://openalex.org/W2033105942","https://openalex.org/W1604093885","https://openalex.org/W2059228154","https://openalex.org/W2167558131","https://openalex.org/W4252629898"],"abstract_inverted_index":{"Very":[0],"low":[1],"energy":[2],"(6":[3],"keV)":[4],"BF+2":[5],"ion":[6],"implantation":[7,50],"has":[8],"been":[9],"used":[10,28,38],"to":[11,29,54],"form":[12],"very":[13],"shallow":[14],"(\u22641000":[15],"\u00c5)":[16],"junctions":[17],"in":[18,81],"crystalline":[19],"and":[20,33,42,95,103],"Ge+":[21,49],"preamorphized":[22,47],"Si.":[23],"Low-temperature":[24],"furnace":[25],"annealing":[26,36],"was":[27,37],"regrow":[30],"the":[31,78,83,89],"crystal,":[32],"rapid":[34],"thermal":[35],"for":[39,65],"dopant":[40],"activation":[41],"radiation":[43],"damage":[44],"removal.":[45],"In":[46],"samples,":[48],"parameters":[51],"were":[52],"found":[53],"have":[55],"an":[56],"influence":[57],"on":[58,101],"B":[59,71,75,97],"diffusion.":[60],"Our":[61],"results":[62],"show":[63,91],"that":[64],"temperatures":[66],"higher":[67],"than":[68,74],"950":[69],"\u00b0C,":[70],"diffusion,":[72,98],"rather":[73],"channeling,":[76],"becomes":[77],"dominant":[79],"mechanism":[80],"determining":[82],"junction":[84],"depth.":[85],"Computer":[86],"simulations":[87],"of":[88,93],"profiles":[90],"regions":[92],"retarded":[94],"enhanced":[96],"which":[99],"depend":[100],"surface":[102],"end-of-range":[104],"damage,":[105],"respectively.":[106]},"counts_by_year":[],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2016-06-24T00:00:00"}