{"id":"https://openalex.org/W2070684149","doi":"https://doi.org/10.1007/bf02676809","title":"Doping of gallium nitride using disilane","display_name":"Doping of gallium nitride using disilane","publication_year":1995,"publication_date":"1995-11-01","ids":{"openalex":"https://openalex.org/W2070684149","doi":"https://doi.org/10.1007/bf02676809","mag":"2070684149"},"language":"en","primary_location":{"id":"doi:10.1007/bf02676809","doi":"https://doi.org/10.1007/bf02676809","is_oa":false,"landing_page_url":"https://doi.org/10.1007/bf02676809","pdf_url":null,"source":{"id":"https://openalex.org/S127985767","display_name":"Journal of Electronic Materials","issn_l":"0361-5235","issn":["0361-5235","0381-5235","1543-186X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-40","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Electronic Materials","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047789707","display_name":"Alma E. Wickenden","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. E. Wickenden","raw_affiliation_strings":["Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Code 6861, 20375-5347, Washington, D.C","Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, D.C.,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Code 6861, 20375-5347, Washington, D.C","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, D.C.,","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111522104","display_name":"Larry B. Rowland","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. B. Rowland","raw_affiliation_strings":["Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Code 6861, 20375-5347, Washington, D.C","Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, D.C.,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Code 6861, 20375-5347, Washington, D.C","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, D.C.,","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110176395","display_name":"Kathleen Doverspike","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Doverspike","raw_affiliation_strings":["Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Code 6861, 20375-5347, Washington, D.C","Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, D.C.,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Code 6861, 20375-5347, Washington, D.C","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, D.C.,","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027610617","display_name":"D. Kurt Gaskill","orcid":"https://orcid.org/0000-0001-7106-3605","observed_orcids":["https://orcid.org/0000-0001-7106-3605"]},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. K. Gaskill","raw_affiliation_strings":["Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Code 6861, 20375-5347, Washington, D.C","Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, D.C.,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Code 6861, 20375-5347, Washington, D.C","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, D.C.,","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072605793","display_name":"Jaime A. Freitas","orcid":"https://orcid.org/0000-0001-6662-9109","observed_orcids":["https://orcid.org/0000-0001-6662-9109"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. A. Freitas","raw_affiliation_strings":["Sachs/Freeman Associates, 20785, Landover, MD","Sachs/Freeman Associates, Landover,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sachs/Freeman Associates, 20785, Landover, MD","institution_ids":[]},{"raw_affiliation_string":"Sachs/Freeman Associates, Landover,","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009193750","display_name":"David S. Simons","orcid":"https://orcid.org/0000-0001-5719-836X","observed_orcids":["https://orcid.org/0000-0001-5719-836X"]},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. S. Simons","raw_affiliation_strings":["National Institute of Standards and Technology, 20899, Gaithersburg, MD","National Institute of Standards and Technology,Gaithersburg,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology, 20899, Gaithersburg, MD","institution_ids":["https://openalex.org/I1321296531"]},{"raw_affiliation_string":"National Institute of Standards and Technology,Gaithersburg,","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112300033","display_name":"P. H. Chi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. H. Chi","raw_affiliation_strings":["National Institute of Standards and Technology, 20899, Gaithersburg, MD","National Institute of Standards and Technology,Gaithersburg,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology, 20899, Gaithersburg, MD","institution_ids":["https://openalex.org/I1321296531"]},{"raw_affiliation_string":"National Institute of Standards and Technology,Gaithersburg,","institution_ids":["https://openalex.org/I1321296531"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3390,"currency":"USD","value_usd":3390},"apc_paid":null,"fwci":4.8667,"has_fulltext":false,"cited_by_count":49,"citation_normalized_percentile":{"value":0.96204006,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"24","issue":"11","first_page":"1547","last_page":"1550"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"gallium nitride","score":0.9950000047683716},{"id":"https://openalex.org/keywords/silicon-doping","display_name":"silicon doping","score":0.9269999861717224},{"id":"https://openalex.org/keywords/disilane","display_name":"disilane","score":0.9739999771118164},{"id":"https://openalex.org/keywords/n-type-doping","display_name":"n-type doping","score":0.7889999747276306},{"id":"https://openalex.org/keywords/exciton-binding-energy","display_name":"exciton binding energy","score":0.7789999842643738},{"id":"https://openalex.org/keywords/low-pressure-organometallic-vapor-phase-epitaxy","display_name":"low-pressure organometallic vapor phase epitaxy","score":0.875},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.9409999847412109},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.8960000276565552}],"concepts":[{"id":"https://openalex.org/C2776259327","wikidata":"https://www.wikidata.org/wiki/Q116073","display_name":"Disilane","level":3,"score":0.9643348455429077},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7649874687194824},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.73903489112854},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6494913101196289},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6436449885368347},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.6163792014122009},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.5674558877944946},{"id":"https://openalex.org/C17729963","wikidata":"https://www.wikidata.org/wiki/Q858289","display_name":"Exciton","level":2,"score":0.49163109064102173},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.4611324369907379},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.44856756925582886},{"id":"https://openalex.org/C43588577","wikidata":"https://www.wikidata.org/wiki/Q715396","display_name":"Solid-state physics","level":2,"score":0.44343331456184387},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.43773993849754333},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.43053731322288513},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.4296625852584839},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3224891424179077},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2499237358570099},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.20773738622665405},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.20458516478538513},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16274654865264893},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07554614543914795},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.06992840766906738},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/bf02676809","doi":"https://doi.org/10.1007/bf02676809","is_oa":false,"landing_page_url":"https://doi.org/10.1007/bf02676809","pdf_url":null,"source":{"id":"https://openalex.org/S127985767","display_name":"Journal of Electronic Materials","issn_l":"0361-5235","issn":["0361-5235","0381-5235","1543-186X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-40","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Electronic Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320337628","display_name":"U.S. Naval Research Laboratory","ror":"https://ror.org/04d23a975"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1964950707","https://openalex.org/W1966158241","https://openalex.org/W1967647837","https://openalex.org/W1978859094","https://openalex.org/W1991383778","https://openalex.org/W1999133759","https://openalex.org/W2003674749","https://openalex.org/W2008736866","https://openalex.org/W2013435480","https://openalex.org/W2021446515","https://openalex.org/W2038533392","https://openalex.org/W2048523451","https://openalex.org/W2055979160","https://openalex.org/W2062528854","https://openalex.org/W2063893765","https://openalex.org/W2083106445","https://openalex.org/W2085635031","https://openalex.org/W2091816286","https://openalex.org/W2122640657","https://openalex.org/W2497318741","https://openalex.org/W4299127235","https://openalex.org/W6639243052"],"related_works":["https://openalex.org/W1966158241","https://openalex.org/W2019235569","https://openalex.org/W2044533363","https://openalex.org/W2100801151","https://openalex.org/W2011845913","https://openalex.org/W3113925478","https://openalex.org/W1998956267","https://openalex.org/W1999133759","https://openalex.org/W2041225734","https://openalex.org/W2279679681"],"abstract_inverted_index":null,"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-17T09:40:24.721904","created_date":"2016-06-24T00:00:00"}