{"id":"https://openalex.org/W2067382012","doi":"https://doi.org/10.1109/sibedm.2008.4585857","title":"Electrophysical behaviors of MIS structure with anisotropic block bounder","display_name":"Electrophysical behaviors of MIS structure with anisotropic block bounder","publication_year":2008,"publication_date":"2008-07-01","ids":{"openalex":"https://openalex.org/W2067382012","doi":"https://doi.org/10.1109/sibedm.2008.4585857","mag":"2067382012"},"language":"en","primary_location":{"id":"doi:10.1109/sibedm.2008.4585857","doi":"https://doi.org/10.1109/sibedm.2008.4585857","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sibedm.2008.4585857","pdf_url":null,"source":{"id":"https://openalex.org/S4210202527","display_name":"International Siberian workshops and tutorials on electron devices and materials","issn_l":"1815-3712","issn":["1815-3712"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 9th International Workshop and Tutorials on Electron Devices and Materials","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5003486729","display_name":"\u041f\u0435\u0440\u043e\u0432 \u0413\u0435\u043d\u043d\u0430\u0434\u0438\u0439 \u0412\u0430\u0441\u0438\u043b\u044c\u0435\u0432\u0438\u0447","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210105890","display_name":"Siberian State University of Telecommunications and Information Science","ror":"https://ror.org/019vbp610","country_code":"RU","type":"education","lineage":["https://openalex.org/I4210105890"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"G.V. Perov","raw_affiliation_strings":["Telecommunications and Informatics, Siberian State University, Novosibirsk, Russia","Siberian State Univ. of Telecommun. & Inf., Novosibirsk"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Telecommunications and Informatics, Siberian State University, Novosibirsk, Russia","institution_ids":["https://openalex.org/I4210105890"]},{"raw_affiliation_string":"Siberian State Univ. of Telecommun. & Inf., Novosibirsk","institution_ids":["https://openalex.org/I4210105890"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103076455","display_name":"Sergey V. Kalinin","orcid":"https://orcid.org/0000-0001-6229-2393","observed_orcids":["https://orcid.org/0000-0001-6229-2393"]},"institutions":[{"id":"https://openalex.org/I4210105890","display_name":"Siberian State University of Telecommunications and Information Science","ror":"https://ror.org/019vbp610","country_code":"RU","type":"education","lineage":["https://openalex.org/I4210105890"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"S.V. Kalinin","raw_affiliation_strings":["Telecommunications and Informatics, Siberian State University, Novosibirsk, Russia","Siberian State Univ. of Telecommun. & Inf., Novosibirsk"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Telecommunications and Informatics, Siberian State University, Novosibirsk, Russia","institution_ids":["https://openalex.org/I4210105890"]},{"raw_affiliation_string":"Siberian State Univ. of Telecommun. & Inf., Novosibirsk","institution_ids":["https://openalex.org/I4210105890"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5058150729","display_name":"P. Yu. Malahov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210105890","display_name":"Siberian State University of Telecommunications and Information Science","ror":"https://ror.org/019vbp610","country_code":"RU","type":"education","lineage":["https://openalex.org/I4210105890"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"P. Yu. Malahov","raw_affiliation_strings":["Telecommunications and Informatics, Siberian State University, Novosibirsk, Russia","Siberian State Univ. of Telecommun. & Inf., Novosibirsk"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Telecommunications and Informatics, Siberian State University, Novosibirsk, Russia","institution_ids":["https://openalex.org/I4210105890"]},{"raw_affiliation_string":"Siberian State Univ. of Telecommun. & Inf., Novosibirsk","institution_ids":["https://openalex.org/I4210105890"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210105890"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.127679,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"94","last_page":"95"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6381999850273132,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6381999850273132,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.32710000872612,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14311","display_name":"Electrical and Electromagnetic Research","score":0.005400000140070915,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/metal-insulator-semiconductor-structures","display_name":"metal-insulator-semiconductor structures","score":0.9490000009536743},{"id":"https://openalex.org/keywords/surface-states","display_name":"surface states","score":0.45500001311302185},{"id":"https://openalex.org/keywords/traps","display_name":"traps","score":0.47999998927116394},{"id":"https://openalex.org/keywords/fixed-charges","display_name":"fixed charges","score":0.6399999856948853},{"id":"https://openalex.org/keywords/mobile-charge","display_name":"mobile charge","score":0.9470000267028809},{"id":"https://openalex.org/keywords/charge-trapping","display_name":"charge trapping","score":0.5960000157356262}],"concepts":[{"id":"https://openalex.org/C144745244","wikidata":"https://www.wikidata.org/wiki/Q4927286","display_name":"Blocking (statistics)","level":2,"score":0.6699671149253845},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.6545629501342773},{"id":"https://openalex.org/C85725439","wikidata":"https://www.wikidata.org/wiki/Q466686","display_name":"Anisotropy","level":2,"score":0.6404443979263306},{"id":"https://openalex.org/C2777210771","wikidata":"https://www.wikidata.org/wiki/Q4927124","display_name":"Block (permutation group theory)","level":2,"score":0.6123368144035339},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5970355868339539},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.565766453742981},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4461734890937805},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3742215037345886},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.31923866271972656},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.26761484146118164},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.21704939007759094},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.09911724925041199},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.09907528758049011},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.08071684837341309},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.06826499104499817}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/sibedm.2008.4585857","doi":"https://doi.org/10.1109/sibedm.2008.4585857","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sibedm.2008.4585857","pdf_url":null,"source":{"id":"https://openalex.org/S4210202527","display_name":"International Siberian workshops and tutorials on electron devices and materials","issn_l":"1815-3712","issn":["1815-3712"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 9th International Workshop and Tutorials on Electron Devices and Materials","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1649332358","https://openalex.org/W3043383964","https://openalex.org/W2070035037","https://openalex.org/W4388376086","https://openalex.org/W1970049716","https://openalex.org/W2026490812","https://openalex.org/W2053105936","https://openalex.org/W3005847259","https://openalex.org/W2040199608","https://openalex.org/W4247059869"],"abstract_inverted_index":{"The":[0],"model":[1],"of":[2,4,23],"behavior":[3],"the":[5,24],"fixed,":[6],"mobile":[7],"charge,":[8],"charge":[9],"on":[10],"superficial":[11],"states,":[12],"and":[13],"traps":[14],"in":[15],"MIS":[16],"structures":[17],"with":[18],"a":[19],"non-uniform":[20],"blocking":[21],"surface":[22],"semiconductor":[25],"is":[26],"offered.":[27]},"counts_by_year":[],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2016-06-24T00:00:00"}