{"id":"https://openalex.org/W2065624918","doi":"https://doi.org/10.1088/0957-4484/19/01/015204","title":"Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals","display_name":"Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals","publication_year":2007,"publication_date":"2007-11-29","ids":{"openalex":"https://openalex.org/W2065624918","doi":"https://doi.org/10.1088/0957-4484/19/01/015204","mag":"2065624918","pmid":"https://pubmed.ncbi.nlm.nih.gov/21730526"},"language":"en","primary_location":{"id":"doi:10.1088/0957-4484/19/01/015204","doi":"https://doi.org/10.1088/0957-4484/19/01/015204","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0957-4484/19/01/015204","pdf_url":"https://iopscience.iop.org/article/10.1088/0957-4484/19/01/015204/pdf","source":{"id":"https://openalex.org/S206811868","display_name":"Nanotechnology","issn_l":"0957-4484","issn":["0957-4484","1361-6528"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-2","ki-jl-1","medline","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanotechnology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","pubmed"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1088/0957-4484/19/01/015204/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080721285","display_name":"Jaewon Jang","orcid":"https://orcid.org/0000-0003-1908-0015","observed_orcids":["https://orcid.org/0000-0003-1908-0015","https://orcid.org/0009-0004-4540-0478","https://orcid.org/0000-0002-6729-5486"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaewon Jang","raw_affiliation_strings":["Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051801319","display_name":"Kyoungah Cho","orcid":"https://orcid.org/0000-0003-1122-8003","observed_orcids":["https://orcid.org/0000-0003-1122-8003"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyoungah Cho","raw_affiliation_strings":["Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111794869","display_name":"Sang Heon Lee","orcid":"https://orcid.org/0000-0002-5203-3029","observed_orcids":["https://orcid.org/0000-0002-5203-3029"]},"institutions":[{"id":"https://openalex.org/I51926615","display_name":"Sun Moon University","ror":"https://ror.org/009e5cd49","country_code":"KR","type":"education","lineage":["https://openalex.org/I51926615"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang Heon Lee","raw_affiliation_strings":["Department of Electronics Engineering, Sun Moon University, Asan, Chung Nam 336-708, Korea","Department of Electronics Engineering, Sun Moon University, Asan, Chung Nam#N#336-708,#N#Korea#N#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Sun Moon University, Asan, Chung Nam 336-708, Korea","institution_ids":["https://openalex.org/I51926615"]},{"raw_affiliation_string":"Department of Electronics Engineering, Sun Moon University, Asan, Chung Nam#N#336-708,#N#Korea#N#","institution_ids":["https://openalex.org/I51926615"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010172715","display_name":"Sangsig Kim","orcid":"https://orcid.org/0000-0002-7246-8724","observed_orcids":["https://orcid.org/0000-0002-7246-8724"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangsig Kim","raw_affiliation_strings":["Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea","institution_ids":["https://openalex.org/I197347611"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3325,"currency":"USD","value_usd":3325},"apc_paid":null,"fwci":2.081,"has_fulltext":true,"cited_by_count":39,"citation_normalized_percentile":{"value":0.8563452,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":98},"biblio":{"volume":"19","issue":"1","first_page":"015204","last_page":"015204"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.76419997215271,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.76419997215271,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.13830000162124634,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10321","display_name":"Quantum Dots Synthesis And Properties","score":0.04960000142455101,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transparent-thin-film-transistors","display_name":"transparent thin-film transistors","score":0.9430000185966492},{"id":"https://openalex.org/keywords/flexible-electronics","display_name":"flexible electronics","score":0.9890000224113464},{"id":"https://openalex.org/keywords/hgte-nanocrystals","display_name":"HgTe nanocrystals","score":0.9359999895095825},{"id":"https://openalex.org/keywords/p-type-transistors","display_name":"p-channel transistors","score":0.7059999704360962},{"id":"https://openalex.org/keywords/field-effect-mobility","display_name":"field-effect mobility","score":0.8999999761581421},{"id":"https://openalex.org/keywords/flexural-strain","display_name":"bending strain","score":0.5320000052452087},{"id":"https://openalex.org/keywords/strain-tolerance","display_name":"strain tolerance","score":0.47600001096725464},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.8539999723434448}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9364657402038574},{"id":"https://openalex.org/C175854130","wikidata":"https://www.wikidata.org/wiki/Q98276914","display_name":"Nanocrystal","level":2,"score":0.7261755466461182},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.6462328433990479},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6005608439445496},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5642354488372803},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4954582452774048},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4730607271194458},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.44964537024497986},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3979550898075104},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.21942830085754395},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.10374629497528076},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.07514747977256775},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.05479362607002258},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1088/0957-4484/19/01/015204","doi":"https://doi.org/10.1088/0957-4484/19/01/015204","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0957-4484/19/01/015204","pdf_url":"https://iopscience.iop.org/article/10.1088/0957-4484/19/01/015204/pdf","source":{"id":"https://openalex.org/S206811868","display_name":"Nanotechnology","issn_l":"0957-4484","issn":["0957-4484","1361-6528"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-2","ki-jl-1","medline","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanotechnology","raw_type":"journal-article"},{"id":"pmid:21730526","doi":null,"is_oa":false,"landing_page_url":"https://pubmed.ncbi.nlm.nih.gov/21730526","pdf_url":null,"source":{"id":"https://openalex.org/S4306525036","display_name":"PubMed","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanotechnology","raw_type":"Journal Article"}],"best_oa_location":{"id":"doi:10.1088/0957-4484/19/01/015204","doi":"https://doi.org/10.1088/0957-4484/19/01/015204","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0957-4484/19/01/015204","pdf_url":"https://iopscience.iop.org/article/10.1088/0957-4484/19/01/015204/pdf","source":{"id":"https://openalex.org/S206811868","display_name":"Nanotechnology","issn_l":"0957-4484","issn":["0957-4484","1361-6528"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-2","ki-jl-1","medline","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanotechnology","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320322348","display_name":"Korea Science and Engineering Foundation","ror":"https://ror.org/013aysd81"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2065624918.pdf","grobid_xml":"https://content.openalex.org/works/W2065624918.grobid-xml"},"referenced_works_count":22,"referenced_works":["https://openalex.org/W1625611598","https://openalex.org/W1963588647","https://openalex.org/W1965009624","https://openalex.org/W1988011976","https://openalex.org/W1989067792","https://openalex.org/W1993110198","https://openalex.org/W1998483116","https://openalex.org/W1999252429","https://openalex.org/W2040811038","https://openalex.org/W2041288053","https://openalex.org/W2041781123","https://openalex.org/W2054111649","https://openalex.org/W2057038312","https://openalex.org/W2059421507","https://openalex.org/W2079796945","https://openalex.org/W2080129402","https://openalex.org/W2091975799","https://openalex.org/W2118386872","https://openalex.org/W2119213820","https://openalex.org/W2142626370","https://openalex.org/W2146101168","https://openalex.org/W2162069599"],"related_works":["https://openalex.org/W1997431767","https://openalex.org/W1997188605","https://openalex.org/W2107349865","https://openalex.org/W2031575897","https://openalex.org/W2260769268","https://openalex.org/W2055728342","https://openalex.org/W769655634","https://openalex.org/W2775307052","https://openalex.org/W2404697450","https://openalex.org/W2891995087"],"abstract_inverted_index":{"Transparent":[0],"and":[1,24,52,98],"flexible":[2],"thin":[3,86],"film":[4,87],"transistors":[5],"(TFTs)":[6],"with":[7,33],"channel":[8,35],"layers":[9],"composed":[10,37],"of":[11,19,38,50,56,70,81,96,102],"sintered":[12,39],"HgTe":[13,40,85],"nanocrystals":[14,41],"were":[15,28],"fabricated":[16],"on":[17],"top":[18],"UV/ozone":[20],"treated":[21],"plastic":[22],"substrates":[23],"their":[25],"electrical":[26],"properties":[27],"characterized.":[29],"A":[30],"representative":[31],"TFT":[32,90],"a":[34,53,79,99],"layer":[36],"revealed":[42],"typical":[43],"p-type":[44],"characteristics,":[45],"an":[46,92],"on/off":[47,93],"current":[48,94],"ratio":[49,95],"\u223c10(3)":[51,97],"field-effect":[54,100],"mobility":[55,101],"4.1":[57],"cm(2)":[58,104],"V(-1)":[59,105],"s(-1).":[60,106],"When":[61],"the":[62,67,71,84,89],"substrate":[63,72],"was":[64],"bent":[65],"until":[66],"bending":[68],"radius":[69],"reached":[73],"2.4":[74],"cm,":[75],"which":[76],"corresponded":[77],"to":[78],"strain":[80],"0.83%":[82],"that":[83],"experienced,":[88],"exhibited":[91],"4.0":[103]},"counts_by_year":[{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":3},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":4}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}