{"id":"https://openalex.org/W2065582295","doi":"https://doi.org/10.1007/bf02670630","title":"Electrical transport characterizations of nitrogen doped ZnSe and ZnTe films","display_name":"Electrical transport characterizations of nitrogen doped ZnSe and ZnTe films","publication_year":1994,"publication_date":"1994-03-01","ids":{"openalex":"https://openalex.org/W2065582295","doi":"https://doi.org/10.1007/bf02670630","mag":"2065582295"},"language":"en","primary_location":{"id":"doi:10.1007/bf02670630","doi":"https://doi.org/10.1007/bf02670630","is_oa":false,"landing_page_url":"https://doi.org/10.1007/bf02670630","pdf_url":null,"source":{"id":"https://openalex.org/S127985767","display_name":"Journal of Electronic Materials","issn_l":"0361-5235","issn":["0361-5235","0381-5235","1543-186X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-40","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Electronic Materials","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5018623391","display_name":"Yongping Fan","orcid":"https://orcid.org/0000-0001-5914-2765","observed_orcids":["https://orcid.org/0000-0001-5914-2765"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Y. Fan","raw_affiliation_strings":["School of Electrical Engineering, Purdue University, 47907-1285, West Lafayette, IN","Purdue University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Purdue University, 47907-1285, West Lafayette, IN","institution_ids":["https://openalex.org/I219193219"]},{"raw_affiliation_string":"Purdue University","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019742720","display_name":"Jung Woo Han","orcid":"https://orcid.org/0000-0003-3077-3875","observed_orcids":["https://orcid.org/0000-0003-3077-3875","https://orcid.org/0000-0001-8936-1205"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Han","raw_affiliation_strings":["School of Electrical Engineering, Purdue University, 47907-1285, West Lafayette, IN","Purdue University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Purdue University, 47907-1285, West Lafayette, IN","institution_ids":["https://openalex.org/I219193219"]},{"raw_affiliation_string":"Purdue University","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":null,"display_name":"L. He","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. He","raw_affiliation_strings":["School of Electrical Engineering, Purdue University, 47907-1285, West Lafayette, IN","Purdue University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Purdue University, 47907-1285, West Lafayette, IN","institution_ids":["https://openalex.org/I219193219"]},{"raw_affiliation_string":"Purdue University","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109142445","display_name":"Junji Saraie","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Saraie","raw_affiliation_strings":["School of Electrical Engineering, Purdue University, 47907-1285, West Lafayette, IN","Purdue University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Purdue University, 47907-1285, West Lafayette, IN","institution_ids":["https://openalex.org/I219193219"]},{"raw_affiliation_string":"Purdue University","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110068302","display_name":"Robert L. Gunshor","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. L. Gunshor","raw_affiliation_strings":["School of Electrical Engineering, Purdue University, 47907-1285, West Lafayette, IN","Purdue University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Purdue University, 47907-1285, West Lafayette, IN","institution_ids":["https://openalex.org/I219193219"]},{"raw_affiliation_string":"Purdue University","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070178619","display_name":"M. M. Hagerott","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I27804330","display_name":"Brown University","ror":"https://ror.org/05gq02987","country_code":"US","type":"education","lineage":["https://openalex.org/I27804330"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Hagerott","raw_affiliation_strings":["Division of Engineering, Brown University, 02912, Providence, RI","Brown University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Engineering, Brown University, 02912, Providence, RI","institution_ids":["https://openalex.org/I27804330"]},{"raw_affiliation_string":"Brown University","institution_ids":["https://openalex.org/I27804330"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007806906","display_name":"Arto V Nurmikko","orcid":"https://orcid.org/0000-0001-9668-2066","observed_orcids":["https://orcid.org/0000-0001-9668-2066"]},"institutions":[{"id":"https://openalex.org/I27804330","display_name":"Brown University","ror":"https://ror.org/05gq02987","country_code":"US","type":"education","lineage":["https://openalex.org/I27804330"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. V. Nurmikko","raw_affiliation_strings":["Division of Engineering, Brown University, 02912, Providence, RI","Brown University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Engineering, Brown University, 02912, Providence, RI","institution_ids":["https://openalex.org/I27804330"]},{"raw_affiliation_string":"Brown University","institution_ids":["https://openalex.org/I27804330"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3390,"currency":"USD","value_usd":3390},"apc_paid":null,"fwci":2.1909,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.87271779,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"23","issue":"3","first_page":"245","last_page":"249"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.673799991607666,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.673799991607666,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.17579999566078186,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.13590000569820404,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nitrogen-doping","display_name":"nitrogen doping","score":0.9539999961853027},{"id":"https://openalex.org/keywords/znse","display_name":"ZnSe","score":0.8709999918937683},{"id":"https://openalex.org/keywords/znte","display_name":"ZnTe","score":1.0},{"id":"https://openalex.org/keywords/dilute-nitrides","display_name":"dilute nitrides","score":0.7319999933242798},{"id":"https://openalex.org/keywords/hall-effect","display_name":"Hall effect","score":0.8560000061988831},{"id":"https://openalex.org/keywords/temperature-dependent-transport","display_name":"temperature-dependent transport","score":0.6830000281333923},{"id":"https://openalex.org/keywords/activation-energy","display_name":"activation energy","score":0.640999972820282},{"id":"https://openalex.org/keywords/nitrogen-acceptors","display_name":"nitrogen acceptors","score":0.9380000233650208},{"id":"https://openalex.org/keywords/ohmic-contacts","display_name":"ohmic contacts","score":0.7369999885559082},{"id":"https://openalex.org/keywords/p-type-semiconductors","display_name":"p-type semiconductors","score":0.7210000157356262},{"id":"https://openalex.org/keywords/free-hole-concentration","display_name":"free hole concentration","score":0.6679999828338623}],"concepts":[{"id":"https://openalex.org/C85443114","wikidata":"https://www.wikidata.org/wiki/Q1521268","display_name":"Van der Pauw method","level":4,"score":0.9497352838516235},{"id":"https://openalex.org/C138230450","wikidata":"https://www.wikidata.org/wiki/Q2016597","display_name":"Ohmic contact","level":3,"score":0.8711501359939575},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.7073750495910645},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6231052279472351},{"id":"https://openalex.org/C43588577","wikidata":"https://www.wikidata.org/wiki/Q715396","display_name":"Solid-state physics","level":2,"score":0.5780165195465088},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.5731026530265808},{"id":"https://openalex.org/C134112204","wikidata":"https://www.wikidata.org/wiki/Q10656","display_name":"Hall effect","level":3,"score":0.5624834895133972},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.5516652464866638},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5121080875396729},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4874849319458008},{"id":"https://openalex.org/C96618451","wikidata":"https://www.wikidata.org/wiki/Q3028008","display_name":"Dilution","level":2,"score":0.4183921813964844},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3861597180366516},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.3810585141181946},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.2923271059989929},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2543700337409973},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.2120770812034607},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1320887804031372},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.1184701919555664},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.06569209694862366},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.055218666791915894},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/bf02670630","doi":"https://doi.org/10.1007/bf02670630","is_oa":false,"landing_page_url":"https://doi.org/10.1007/bf02670630","pdf_url":null,"source":{"id":"https://openalex.org/S127985767","display_name":"Journal of Electronic Materials","issn_l":"0361-5235","issn":["0361-5235","0381-5235","1543-186X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-40","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Electronic Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320332467","display_name":"U.S. Air Force","ror":"https://ror.org/006gmme17"},{"id":"https://openalex.org/F4320337345","display_name":"Office of Naval Research","ror":"https://ror.org/00rk2pe57"},{"id":"https://openalex.org/F4320338279","display_name":"Air Force Office of Scientific Research","ror":"https://ror.org/011e9bt93"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1964285140","https://openalex.org/W1964690076","https://openalex.org/W1968730124","https://openalex.org/W1969740356","https://openalex.org/W1976812845","https://openalex.org/W1979013319","https://openalex.org/W1979046845","https://openalex.org/W1979353588","https://openalex.org/W1991662879","https://openalex.org/W2012828785","https://openalex.org/W2021036032","https://openalex.org/W2045115530","https://openalex.org/W2090021750","https://openalex.org/W2133369391","https://openalex.org/W2134406451","https://openalex.org/W4376543300"],"related_works":["https://openalex.org/W1976812845","https://openalex.org/W1973638349","https://openalex.org/W2004399561","https://openalex.org/W2090936874","https://openalex.org/W2092646295","https://openalex.org/W2000003098","https://openalex.org/W1974107097","https://openalex.org/W2050178294","https://openalex.org/W1963884073","https://openalex.org/W2046575290"],"abstract_inverted_index":null,"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-11-06T12:05:46.655746","created_date":"2016-06-24T00:00:00"}