{"id":"https://openalex.org/W2065311925","doi":"https://doi.org/10.1143/jjap.29.l2315","title":"Surface Impurities Encapsulated by Silicon Wafer Bonding","display_name":"Surface Impurities Encapsulated by Silicon Wafer Bonding","publication_year":1990,"publication_date":"1990-12-01","ids":{"openalex":"https://openalex.org/W2065311925","doi":"https://doi.org/10.1143/jjap.29.l2315","mag":"2065311925"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.29.l2315","doi":"https://doi.org/10.1143/jjap.29.l2315","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.29.l2315","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5028163922","display_name":"Takao Ab\u00e9","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Takao Abe","raw_affiliation_strings":["Shin-Etsu Handotai"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shin-Etsu Handotai","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023761881","display_name":"Atsuo Uchiyama","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Atsuo Uchiyama","raw_affiliation_strings":["Nagano Denshi"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nagano Denshi","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062323919","display_name":"Katsuo Yoshizawa","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Katsuo Yoshizawa","raw_affiliation_strings":["Nagano Denshi"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nagano Denshi","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036939191","display_name":"Yasuaki Nakazato","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yasuaki Nakazato","raw_affiliation_strings":["Nagano Denshi"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nagano Denshi","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079722949","display_name":"Mamoru Miyawaki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mamoru Miyawaki","raw_affiliation_strings":["Engineering Depatment, Tohoku University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Depatment, Tohoku University","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110479973","display_name":"Tadahiro Ohmi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tadahiro Ohmi","raw_affiliation_strings":["Engineering Depatment, Tohoku University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Depatment, Tohoku University","institution_ids":["https://openalex.org/I201537933"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":2.8074,"has_fulltext":false,"cited_by_count":22,"citation_normalized_percentile":{"value":0.8846428,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"29","issue":"12A","first_page":"L2315","last_page":"L2315"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.6913999915122986,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.6913999915122986,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.1168999969959259,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.1096000000834465,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/wafer-bonding","display_name":"wafer bonding","score":0.8859999775886536},{"id":"https://openalex.org/keywords/surface-impurities","display_name":"surface impurities","score":0.7680000066757202},{"id":"https://openalex.org/keywords/silicon-wafers","display_name":"silicon wafers","score":0.9160000085830688},{"id":"https://openalex.org/keywords/sims-depth-profiling","display_name":"SIMS depth profiling","score":0.7960000038146973},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.6380000114440918},{"id":"https://openalex.org/keywords/hydrogen-diffusion","display_name":"hydrogen diffusion","score":0.8069999814033508},{"id":"https://openalex.org/keywords/carbon-diffusion","display_name":"carbon diffusion","score":0.8040000200271606},{"id":"https://openalex.org/keywords/czochralski-silicon","display_name":"Czochralski silicon","score":0.7689999938011169},{"id":"https://openalex.org/keywords/float-zone-silicon","display_name":"float-zone silicon","score":0.8080000281333923}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.9103437662124634},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.8289412260055542},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7023341059684753},{"id":"https://openalex.org/C2779133538","wikidata":"https://www.wikidata.org/wiki/Q677010","display_name":"Wafer bonding","level":3,"score":0.6728109121322632},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6667373180389404},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.615831732749939},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6098645925521851},{"id":"https://openalex.org/C201414436","wikidata":"https://www.wikidata.org/wiki/Q567503","display_name":"Anodic bonding","level":3,"score":0.4574010968208313},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.337885320186615},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2331940233707428},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1652108132839203},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.10485267639160156},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.29.l2315","doi":"https://doi.org/10.1143/jjap.29.l2315","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.29.l2315","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1989052695","https://openalex.org/W1991401244","https://openalex.org/W2013653450","https://openalex.org/W2013746255","https://openalex.org/W2045330802","https://openalex.org/W2070250901","https://openalex.org/W2071520928","https://openalex.org/W2086589110"],"related_works":["https://openalex.org/W2061703201","https://openalex.org/W2039826739","https://openalex.org/W1994258205","https://openalex.org/W2112130345","https://openalex.org/W2084364477","https://openalex.org/W2362519098","https://openalex.org/W2037106016","https://openalex.org/W2093576583","https://openalex.org/W2467272804","https://openalex.org/W1895523130"],"abstract_inverted_index":{"Wafer":[0],"bonding":[1,68],"techniques":[2],"are":[3],"shown":[4],"to":[5,10,75,146],"provide":[6],"an":[7,123],"important":[8],"addition":[9],"methods":[11],"used":[12,130,145],"for":[13,156],"the":[14,20,32,71,84,91,95,118,143,148,153,157],"detection":[15],"of":[16,22,46,58,73,86,97],"residual":[17],"impurities":[18],"on":[19],"surfaces":[21],"polished":[23],"and":[24,38,52,81,88,94,99,109,121,139],"cleaned":[25],"silicon":[26],"wafers.":[27],"Impurities":[28],"were":[29,54,101,129],"encapsulated":[30],"in":[31,70,113,142],"interface":[33,120,155],"made":[34],"by":[35,40,106],"wafer":[36,67],"bonding,":[37],"analyzed":[39],"SIMS":[41],"depth":[42],"profiling.":[43],"Significant":[44],"concentrations":[45],"H,":[47],"C,":[48],"N,":[49],"O,":[50],"F":[51,138],"Cl":[53,140],"detected.":[55],"The":[56],"concentration":[57],"these":[59],"elements":[60],"did":[61],"not":[62],"change":[63],"after":[64],"two":[65],"hour":[66],"anneals":[69,78],"range":[72,160],"200\u00b0C":[74],"800\u00b0C.":[76],"For":[77],"at":[79,152],"1000\u00b0C":[80],"above":[82],"both":[83],"diffusion":[85],"H":[87],"C":[89],"from":[90],"bonded":[92,119,154],"interface,":[93],"aggregation":[96],"N":[98],"O":[100],"observed.":[102],"It":[103],"was":[104],"confirmed":[105],"IR":[107],"absorption":[108],"HR-TEM":[110],"that":[111],"oxygen":[112],"CZ":[114],"crystals":[115],"outdiffuses":[116],"into":[117],"produces":[122],"SiO2":[124],"layer.":[125],"Low-oxygen":[126],"FZ":[127],"wafers":[128,149],"as":[131,137],"a":[132],"reference":[133],"comparison.":[134],"Elements":[135],"such":[136],"contained":[141],"chemicals":[144],"clean":[147],"remained":[150],"fixed":[151],"entire":[158],"temperature":[159],"tested.":[161]},"counts_by_year":[{"year":2014,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}