{"id":"https://openalex.org/W2064908346","doi":"https://doi.org/10.1016/0169-4332(93)90580-5","title":"Formation of ironsilicide on Si(001)","display_name":"Formation of ironsilicide on Si(001)","publication_year":1993,"publication_date":"1993-06-01","ids":{"openalex":"https://openalex.org/W2064908346","doi":"https://doi.org/10.1016/0169-4332(93)90580-5","mag":"2064908346"},"language":"en","primary_location":{"id":"doi:10.1016/0169-4332(93)90580-5","doi":"https://doi.org/10.1016/0169-4332(93)90580-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0169-4332(93)90580-5","pdf_url":null,"source":{"id":"https://openalex.org/S42323631","display_name":"Applied Surface Science","issn_l":"0169-4332","issn":["0169-4332","1873-5584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080487540","display_name":"K. Konuma","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Konuma","raw_affiliation_strings":["MICROELECTRONICS RESEARCH LABORATORIES, NEC CORPORATION, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MICROELECTRONICS RESEARCH LABORATORIES, NEC CORPORATION, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015185159","display_name":"J. Vrijmoeth","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2803035111","display_name":"Institute for Atomic and Molecular Physics","ror":"https://ror.org/038x9td67","country_code":"NL","type":"facility","lineage":["https://openalex.org/I2800991832","https://openalex.org/I2803035111","https://openalex.org/I4405262988"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"J. Vrijmoeth","raw_affiliation_strings":["FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands","institution_ids":["https://openalex.org/I2803035111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039052923","display_name":"Peter M. Zagwijn","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2803035111","display_name":"Institute for Atomic and Molecular Physics","ror":"https://ror.org/038x9td67","country_code":"NL","type":"facility","lineage":["https://openalex.org/I2800991832","https://openalex.org/I2803035111","https://openalex.org/I4405262988"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"P.M. Zagwijn","raw_affiliation_strings":["FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands","institution_ids":["https://openalex.org/I2803035111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003090623","display_name":"Elias Vlieg","orcid":"https://orcid.org/0000-0002-1343-4102","observed_orcids":["https://orcid.org/0000-0002-1343-4102"]},"institutions":[{"id":"https://openalex.org/I2803035111","display_name":"Institute for Atomic and Molecular Physics","ror":"https://ror.org/038x9td67","country_code":"NL","type":"facility","lineage":["https://openalex.org/I2800991832","https://openalex.org/I2803035111","https://openalex.org/I4405262988"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"E. Vlieg","raw_affiliation_strings":["FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands","institution_ids":["https://openalex.org/I2803035111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5105367454","display_name":"J. F. van der Veen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2803035111","display_name":"Institute for Atomic and Molecular Physics","ror":"https://ror.org/038x9td67","country_code":"NL","type":"facility","lineage":["https://openalex.org/I2800991832","https://openalex.org/I2803035111","https://openalex.org/I4405262988"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"J.F. van der Veen","raw_affiliation_strings":["FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands","institution_ids":["https://openalex.org/I2803035111"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3930,"currency":"USD","value_usd":3930},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.2170553,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"70-71","issue":null,"first_page":"564","last_page":"568"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13531","display_name":"Surface and Thin Film Phenomena","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/iron-silicide","display_name":"iron silicide","score":0.8420000076293945},{"id":"https://openalex.org/keywords/beta-fesi2","display_name":"\u03b2-FeSi2","score":0.9760000109672546},{"id":"https://openalex.org/keywords/si-100-substrate","display_name":"Si(100) substrate","score":0.9039999842643738},{"id":"https://openalex.org/keywords/ultrathin-epitaxial-films","display_name":"ultrathin epitaxial films","score":0.9549999833106995},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.8790000081062317},{"id":"https://openalex.org/keywords/fesi","display_name":"FeSi","score":0.5820000171661377},{"id":"https://openalex.org/keywords/fe5si3","display_name":"Fe5Si3","score":0.9850000143051147},{"id":"https://openalex.org/keywords/azimuthal-orientation","display_name":"azimuthal orientation","score":0.7250000238418579},{"id":"https://openalex.org/keywords/lattice-structures","display_name":"lattice structures","score":0.4659999907016754},{"id":"https://openalex.org/keywords/composition","display_name":"composition","score":0.3889999985694885},{"id":"https://openalex.org/keywords/morphology-materials-science","display_name":"morphology (materials science)","score":0.5410000085830688}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45014598965644836},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.37519505620002747},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.3639572560787201},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.33278965950012207},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15171825885772705}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/0169-4332(93)90580-5","doi":"https://doi.org/10.1016/0169-4332(93)90580-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0169-4332(93)90580-5","pdf_url":null,"source":{"id":"https://openalex.org/S42323631","display_name":"Applied Surface Science","issn_l":"0169-4332","issn":["0169-4332","1873-5584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1969488673","https://openalex.org/W1970125705","https://openalex.org/W1970373304","https://openalex.org/W1977047090","https://openalex.org/W1993716683","https://openalex.org/W1997164567","https://openalex.org/W2003261460","https://openalex.org/W2039364456","https://openalex.org/W2047496602","https://openalex.org/W2068053295","https://openalex.org/W2092761043","https://openalex.org/W2129951600"],"related_works":["https://openalex.org/W2022581768","https://openalex.org/W2324316121","https://openalex.org/W1964960488","https://openalex.org/W2071709574","https://openalex.org/W2062940858","https://openalex.org/W2082630471","https://openalex.org/W2075981055","https://openalex.org/W2067446577","https://openalex.org/W2094023938","https://openalex.org/W7146745442"],"abstract_inverted_index":null,"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}