{"id":"https://openalex.org/W2064320503","doi":"https://doi.org/10.1063/1.342752","title":"Surface segregation mechanism during two-dimensional epitaxial growth: The case of dopants in Si and GaAs molecular-beam epitaxy","display_name":"Surface segregation mechanism during two-dimensional epitaxial growth: The case of dopants in Si and GaAs molecular-beam epitaxy","publication_year":1989,"publication_date":"1989-04-01","ids":{"openalex":"https://openalex.org/W2064320503","doi":"https://doi.org/10.1063/1.342752","mag":"2064320503"},"language":"en","primary_location":{"id":"doi:10.1063/1.342752","doi":"https://doi.org/10.1063/1.342752","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.342752","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033194753","display_name":"St\u00e9phane Andrieu","orcid":"https://orcid.org/0000-0003-0373-8193","observed_orcids":["https://orcid.org/0000-0003-0373-8193"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Andrieu","raw_affiliation_strings":["Centre National d\u2019Etudes et Telecommunications, Chemin du vieux ch\u00eane, 38243 Meylan, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre National d\u2019Etudes et Telecommunications, Chemin du vieux ch\u00eane, 38243 Meylan, France","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111421904","display_name":"Fran\u00e7ois Arnaud d'Avitaya","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"F. Arnaud d\u2019Avitaya","raw_affiliation_strings":["Centre National d\u2019Etudes et Telecommunications, Chemin du vieux ch\u00eane, 38243 Meylan, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre National d\u2019Etudes et Telecommunications, Chemin du vieux ch\u00eane, 38243 Meylan, France","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5039267020","display_name":"J. C. Pfister","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. C. Pfister","raw_affiliation_strings":["Centre National d\u2019Etudes et Telecommunications, Chemin du vieux ch\u00eane, 38243 Meylan, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre National d\u2019Etudes et Telecommunications, Chemin du vieux ch\u00eane, 38243 Meylan, France","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":3.9764,"has_fulltext":false,"cited_by_count":40,"citation_normalized_percentile":{"value":0.9429871,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"65","issue":"7","first_page":"2681","last_page":"2687"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8734999895095825,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8734999895095825,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.060600001364946365,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.04309999942779541,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"molecular beam epitaxy","score":0.9340000152587891},{"id":"https://openalex.org/keywords/si","display_name":"Si","score":0.335999995470047},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"GaAs","score":1.0},{"id":"https://openalex.org/keywords/dopant-distribution","display_name":"dopant distribution","score":0.6439999938011169},{"id":"https://openalex.org/keywords/growth-rate-crystal-and-thin-film-growth","display_name":"growth rate (crystal and thin-film growth)","score":0.6679999828338623},{"id":"https://openalex.org/keywords/kinetic-equations","display_name":"kinetic equations","score":0.7400000095367432}],"concepts":[{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.9367988109588623},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.7981276512145996},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6454881429672241},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.609859824180603},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5855323672294617},{"id":"https://openalex.org/C159467904","wikidata":"https://www.wikidata.org/wiki/Q2001702","display_name":"Chemical physics","level":1,"score":0.5751860737800598},{"id":"https://openalex.org/C195839","wikidata":"https://www.wikidata.org/wiki/Q901959","display_name":"Surface energy","level":2,"score":0.48905786871910095},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.44869542121887207},{"id":"https://openalex.org/C58312451","wikidata":"https://www.wikidata.org/wiki/Q4817200","display_name":"Atom (system on chip)","level":2,"score":0.42705202102661133},{"id":"https://openalex.org/C26456737","wikidata":"https://www.wikidata.org/wiki/Q185154","display_name":"Crystal growth","level":2,"score":0.41369226574897766},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.38064518570899963},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.37072229385375977},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.314983606338501},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2906540036201477},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.28029191493988037},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13800179958343506},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09930115938186646},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.342752","doi":"https://doi.org/10.1063/1.342752","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.342752","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":42,"referenced_works":["https://openalex.org/W616143378","https://openalex.org/W1965571863","https://openalex.org/W1969395772","https://openalex.org/W1971357111","https://openalex.org/W1980216138","https://openalex.org/W1982889465","https://openalex.org/W1983156403","https://openalex.org/W1987729201","https://openalex.org/W1988922353","https://openalex.org/W1991692097","https://openalex.org/W1994377407","https://openalex.org/W2000114312","https://openalex.org/W2003119753","https://openalex.org/W2009870510","https://openalex.org/W2010257599","https://openalex.org/W2021479347","https://openalex.org/W2027942600","https://openalex.org/W2029241703","https://openalex.org/W2035816327","https://openalex.org/W2038649391","https://openalex.org/W2038935122","https://openalex.org/W2039598051","https://openalex.org/W2042007073","https://openalex.org/W2044609117","https://openalex.org/W2045669634","https://openalex.org/W2047077671","https://openalex.org/W2049454302","https://openalex.org/W2051017146","https://openalex.org/W2053714767","https://openalex.org/W2055360206","https://openalex.org/W2059448823","https://openalex.org/W2059960144","https://openalex.org/W2065851592","https://openalex.org/W2079363297","https://openalex.org/W2087373564","https://openalex.org/W2087591286","https://openalex.org/W2091171718","https://openalex.org/W2091533801","https://openalex.org/W2093159424","https://openalex.org/W2095153637","https://openalex.org/W2121920156","https://openalex.org/W2332793982"],"related_works":["https://openalex.org/W2547008740","https://openalex.org/W2087807114","https://openalex.org/W1598833934","https://openalex.org/W2041435375","https://openalex.org/W1971792152","https://openalex.org/W2046297459","https://openalex.org/W1970112667","https://openalex.org/W2009870510","https://openalex.org/W1986786625","https://openalex.org/W2321635827"],"abstract_inverted_index":{"In":[0],"this":[1,58,93,111],"paper,":[2],"we":[3],"present":[4],"a":[5,124,128],"physical":[6],"explanation":[7],"for":[8,69,120],"the":[9,23,33,39,42,45,74,80,85,108,116,121],"dopant":[10,28,36,125],"surface":[11],"segregation":[12,112],"during":[13,44,60],"two-dimensional":[14,61],"growth":[15,81],"in":[16,99,115],"molecular-beam":[17],"epitaxy.":[18],"It":[19,105],"is":[20,30,53,88,103],"shown":[21],"that":[22,107],"only":[24],"way":[25],"to":[26,31,95],"explain":[27],"behavior":[29],"assume":[32],"climbing":[34],"of":[35,50,73,92,110,123,127],"atoms":[37],"over":[38],"steps":[40],"on":[41,84],"surface,":[43],"growth.":[46],"An":[47],"energetical":[48],"analysis":[49],"such":[51],"phenomenon":[52,113],"presented.":[54],"Taking":[55],"into":[56],"account":[57],"mechanism":[59],"growth,":[62],"two":[63],"kinetic":[64],"equations":[65],"can":[66],"be":[67],"written":[68],"each":[70],"layer.":[71],"Resolution":[72],"system":[75],"provides":[76],"analytical":[77],"solutions,":[78],"and":[79,101],"rate":[82],"influence":[83],"doping":[86],"profile":[87],"justified.":[89],"The":[90],"applicability":[91],"approach":[94],"several":[96],"dopants":[97],"both":[98],"GaAs":[100],"Si":[102],"discussed.":[104],"appears":[106],"origin":[109],"lies":[114],"unfavorable":[117],"energy":[118],"situation":[119],"incorporation":[122],"instead":[126],"bulk":[129],"material":[130],"atom.":[131]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}