{"id":"https://openalex.org/W2062051024","doi":"https://doi.org/10.7567/jjap.54.04db01","title":"Analysis of breakdown voltage of area surrounded by multiple trench gaps in 4 kV monolithic isolator for communication network interface","display_name":"Analysis of breakdown voltage of area surrounded by multiple trench gaps in 4 kV monolithic isolator for communication network interface","publication_year":2015,"publication_date":"2015-02-27","ids":{"openalex":"https://openalex.org/W2062051024","doi":"https://doi.org/10.7567/jjap.54.04db01","mag":"2062051024"},"language":"en","primary_location":{"id":"doi:10.7567/jjap.54.04db01","doi":"https://doi.org/10.7567/jjap.54.04db01","is_oa":true,"landing_page_url":"https://doi.org/10.7567/jjap.54.04db01","pdf_url":"https://iopscience.iop.org/article/10.7567/JJAP.54.04DB01/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.7567/JJAP.54.04DB01/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5005176563","display_name":"Yusuke Takeuchi","orcid":"https://orcid.org/0000-0002-2588-9307","observed_orcids":["https://orcid.org/0000-0002-2588-9307"]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Yusuke Takeuchi","raw_affiliation_strings":["Tohoku University","Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tohoku University","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059412772","display_name":"Rihito Kuroda","orcid":"https://orcid.org/0000-0001-7812-3084","observed_orcids":["https://orcid.org/0000-0001-7812-3084"]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Rihito Kuroda","raw_affiliation_strings":["Tohoku University","Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tohoku University","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110456758","display_name":"Shigetoshi Sugawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shigetoshi Sugawa","raw_affiliation_strings":["Tohoku University","Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tohoku University","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan","institution_ids":["https://openalex.org/I201537933"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5005176563"],"corresponding_institution_ids":["https://openalex.org/I201537933"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.1399,"has_fulltext":true,"cited_by_count":1,"citation_normalized_percentile":{"value":0.50299225,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"54","issue":"4S","first_page":"04DB01","last_page":"04DB01"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.32249999046325684,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.32249999046325684,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.13930000364780426,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.13920000195503235,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.8740000128746033},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.9010000228881836},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.7639999985694885},{"id":"https://openalex.org/keywords/substrate-resistance","display_name":"substrate resistance","score":0.9100000262260437},{"id":"https://openalex.org/keywords/ceramic-substrates","display_name":"ceramic substrates","score":0.5960000157356262}],"concepts":[{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.817802369594574},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.7496963739395142},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7298153042793274},{"id":"https://openalex.org/C54888747","wikidata":"https://www.wikidata.org/wiki/Q962002","display_name":"Isolator","level":2,"score":0.6709092259407043},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6499149799346924},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6319011449813843},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5600179433822632},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.519443929195404},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5075238943099976},{"id":"https://openalex.org/C206755178","wikidata":"https://www.wikidata.org/wiki/Q1131271","display_name":"Capacitive sensing","level":2,"score":0.48278892040252686},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.43907690048217773},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.42014995217323303},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4085472822189331},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.26399004459381104},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14169254899024963},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7567/jjap.54.04db01","doi":"https://doi.org/10.7567/jjap.54.04db01","is_oa":true,"landing_page_url":"https://doi.org/10.7567/jjap.54.04db01","pdf_url":"https://iopscience.iop.org/article/10.7567/JJAP.54.04DB01/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.7567/jjap.54.04db01","doi":"https://doi.org/10.7567/jjap.54.04db01","is_oa":true,"landing_page_url":"https://doi.org/10.7567/jjap.54.04db01","pdf_url":"https://iopscience.iop.org/article/10.7567/JJAP.54.04DB01/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.6773999929428101,"display_name":"Industry, innovation and infrastructure"}],"study_designs":[],"awards":[{"id":"https://openalex.org/G3012990344","display_name":"Accurate measurement and statistical analysis of gate leakage current of MOSFETs with atomically flat interface","funder_award_id":"24360129","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"}],"funders":[{"id":"https://openalex.org/F4320334764","display_name":"Japan Society for the Promotion of Science","ror":"https://ror.org/00hhkn466"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2062051024.pdf","grobid_xml":"https://content.openalex.org/works/W2062051024.grobid-xml"},"referenced_works_count":30,"referenced_works":["https://openalex.org/W1500470927","https://openalex.org/W1510040151","https://openalex.org/W1587821839","https://openalex.org/W1603956360","https://openalex.org/W1976522535","https://openalex.org/W2002697410","https://openalex.org/W2007856834","https://openalex.org/W2045403595","https://openalex.org/W2098960070","https://openalex.org/W2100189151","https://openalex.org/W2103804206","https://openalex.org/W2110292990","https://openalex.org/W2124850729","https://openalex.org/W2124965848","https://openalex.org/W2124984817","https://openalex.org/W2130255112","https://openalex.org/W2131787200","https://openalex.org/W2138661465","https://openalex.org/W2142235039","https://openalex.org/W2143752791","https://openalex.org/W2144088016","https://openalex.org/W2154310455","https://openalex.org/W2164160322","https://openalex.org/W2166481852","https://openalex.org/W2167443192","https://openalex.org/W2168906124","https://openalex.org/W2334108005","https://openalex.org/W2534337857","https://openalex.org/W2540807895","https://openalex.org/W2989169172"],"related_works":["https://openalex.org/W2582343021","https://openalex.org/W2359175440","https://openalex.org/W2415800759","https://openalex.org/W2065096540","https://openalex.org/W2029661636","https://openalex.org/W2078239122","https://openalex.org/W3117351546","https://openalex.org/W2009014117","https://openalex.org/W2141479666","https://openalex.org/W2163020499"],"abstract_inverted_index":{"Abstract":[0],"We":[1,29,111],"analyzed":[2],"the":[3,17,21,37,45,50,59,67,84,101,113,119],"shared":[4],"voltages":[5],"of":[6,36,40,61,74,115,124],"multiple":[7],"trench":[8,41,62,75],"gaps":[9,42],"on":[10],"a":[11,31,71,125],"silicon-on-insulator":[12],"(SOI)":[13],"substrate":[14,85,89],"and":[15,43,121],"showed":[16],"conditions":[18,47,117],"for":[19,48,100,105],"improving":[20,49],"breakdown":[22,51],"voltage":[23],"surrounded":[24],"by":[25],"these":[26,116],"isolated":[27],"structures.":[28],"introduced":[30],"unified":[32],"impedance":[33,60],"model":[34,39],"instead":[35],"capacitive":[38],"determined":[44],"effective":[46],"voltage.":[52],"The":[53,78],"first":[54],"condition":[55,80,96],"is":[56,81,91,97],"to":[57,82],"reduce":[58],"gaps.":[63],"In":[64],"this":[65,95],"case,":[66],"leak":[68],"current":[69],"gives":[70],"low":[72],"limit":[73],"gap":[76],"resistance.":[77,86],"second":[79],"increase":[83],"As":[87],"silicon":[88,102],"resistance":[90],"not":[92,98],"very":[93],"high,":[94],"useful":[99],"substrate,":[103],"but":[104],"other":[106],"materials":[107],"such":[108],"as":[109],"ceramics.":[110],"confirmed":[112],"effectiveness":[114],"from":[118],"simulation":[120],"experimental":[122],"results":[123],"fabricated":[126],"chip.":[127]},"counts_by_year":[{"year":2016,"cited_by_count":1}],"updated_date":"2026-11-08T12:12:28.789561","created_date":"2016-06-24T00:00:00"}