{"id":"https://openalex.org/W2061961027","doi":"https://doi.org/10.1007/bf01199493","title":"Synergetic effects during sputter-assisted depth profiling: Growth-dominated topography development on InP and a model of the atomic mechanism","display_name":"Synergetic effects during sputter-assisted depth profiling: Growth-dominated topography development on InP and a model of the atomic mechanism","publication_year":1987,"publication_date":"1987-01-01","ids":{"openalex":"https://openalex.org/W2061961027","doi":"https://doi.org/10.1007/bf01199493","mag":"2061961027"},"language":"en","primary_location":{"id":"doi:10.1007/bf01199493","doi":"https://doi.org/10.1007/bf01199493","is_oa":false,"landing_page_url":"https://doi.org/10.1007/bf01199493","pdf_url":null,"source":{"id":"https://openalex.org/S12065667","display_name":"Microchimica Acta","issn_l":"0026-3672","issn":["0026-3672","1436-5073"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-1","ki-jl-1","medline","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Mikrochimica Acta","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016571120","display_name":"Werner H. Gries","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2802562207","display_name":"Deutsche Bundespost","ror":"https://ror.org/0150tj573","country_code":"DE","type":"government","lineage":["https://openalex.org/I2802562207"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Werner H. Gries","raw_affiliation_strings":["Research Institute of the Deutsche Bundespost, Postfach 5000, D-6100, Darmstadt, Federal Republic of Germany","Research Institute of the Deutsche Bundespost, Darmstadt, Federal Republic of Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute of the Deutsche Bundespost, Postfach 5000, D-6100, Darmstadt, Federal Republic of Germany","institution_ids":["https://openalex.org/I2802562207"]},{"raw_affiliation_string":"Research Institute of the Deutsche Bundespost, Darmstadt, Federal Republic of Germany","institution_ids":["https://openalex.org/I2802562207"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5068327214","display_name":"Klaus Miethe","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2802562207","display_name":"Deutsche Bundespost","ror":"https://ror.org/0150tj573","country_code":"DE","type":"government","lineage":["https://openalex.org/I2802562207"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Klaus Miethe","raw_affiliation_strings":["Research Institute of the Deutsche Bundespost, Postfach 5000, D-6100, Darmstadt, Federal Republic of Germany","Research Institute of the Deutsche Bundespost, Darmstadt, Federal Republic of Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute of the Deutsche Bundespost, Postfach 5000, D-6100, Darmstadt, Federal Republic of Germany","institution_ids":["https://openalex.org/I2802562207"]},{"raw_affiliation_string":"Research Institute of the Deutsche Bundespost, Darmstadt, Federal Republic of Germany","institution_ids":["https://openalex.org/I2802562207"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2802562207"],"apc_list":{"value":4590,"currency":"USD","value_usd":4590},"apc_paid":null,"fwci":0.3459,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.53036901,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"91","issue":"1-6","first_page":"169","last_page":"177"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13552","display_name":"Advanced Materials Characterization Techniques","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2500","display_name":"General Materials Science"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"indium phosphide","score":0.7480000257492065},{"id":"https://openalex.org/keywords/ion-bombardment","display_name":"ion bombardment","score":0.640999972820282},{"id":"https://openalex.org/keywords/interstitials","display_name":"interstitials","score":0.5509999990463257},{"id":"https://openalex.org/keywords/screw-dislocations","display_name":"screw dislocations","score":0.7820000052452087},{"id":"https://openalex.org/keywords/compressive-stress","display_name":"compressive stress","score":0.7680000066757202},{"id":"https://openalex.org/keywords/interfacial-diffusion","display_name":"interfacial diffusion","score":0.9010000228881836},{"id":"https://openalex.org/keywords/damage-repair","display_name":"damage repair","score":0.6729999780654907},{"id":"https://openalex.org/keywords/oxygen-flooding","display_name":"oxygen flooding","score":0.6230000257492065},{"id":"https://openalex.org/keywords/electron-beam-scanning","display_name":"electron beam scanning","score":0.6290000081062317}],"concepts":[{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.7619256973266602},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.6097136735916138},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5747579336166382},{"id":"https://openalex.org/C137637335","wikidata":"https://www.wikidata.org/wiki/Q899604","display_name":"Crystallite","level":2,"score":0.5232385993003845},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.5025510787963867},{"id":"https://openalex.org/C159467904","wikidata":"https://www.wikidata.org/wiki/Q2001702","display_name":"Chemical physics","level":1,"score":0.4751327335834503},{"id":"https://openalex.org/C114221277","wikidata":"https://www.wikidata.org/wiki/Q899743","display_name":"Vacancy defect","level":2,"score":0.46198755502700806},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.4184093475341797},{"id":"https://openalex.org/C41999313","wikidata":"https://www.wikidata.org/wiki/Q489328","display_name":"Molecular physics","level":1,"score":0.3661593794822693},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.3296216130256653},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2952452003955841},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.26754480600357056},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.2268398404121399},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.22513547539710999},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.19758939743041992},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.16142180562019348},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.09063276648521423},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/bf01199493","doi":"https://doi.org/10.1007/bf01199493","is_oa":false,"landing_page_url":"https://doi.org/10.1007/bf01199493","pdf_url":null,"source":{"id":"https://openalex.org/S12065667","display_name":"Microchimica Acta","issn_l":"0026-3672","issn":["0026-3672","1436-5073"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-1","ki-jl-1","medline","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Mikrochimica Acta","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1976336693","https://openalex.org/W1992320824","https://openalex.org/W1994850387","https://openalex.org/W2009210480","https://openalex.org/W2031694094","https://openalex.org/W2035200126","https://openalex.org/W2078141907","https://openalex.org/W2081272374","https://openalex.org/W2146093809"],"related_works":["https://openalex.org/W1966541359","https://openalex.org/W1980399993","https://openalex.org/W2029664968","https://openalex.org/W2031694094","https://openalex.org/W2347795602","https://openalex.org/W2048288000","https://openalex.org/W4245834235","https://openalex.org/W2059742005","https://openalex.org/W90306468","https://openalex.org/W2022663011"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}