{"id":"https://openalex.org/W2059345181","doi":"https://doi.org/10.7567/jjap.50.065001","title":"Strain-Dependent Characteristics of Triangular Silicon Nanowire-Based Field-Effect Transistors on Flexible Plastics","display_name":"Strain-Dependent Characteristics of Triangular Silicon Nanowire-Based Field-Effect Transistors on Flexible Plastics","publication_year":2011,"publication_date":"2011-06-01","ids":{"openalex":"https://openalex.org/W2059345181","doi":"https://doi.org/10.7567/jjap.50.065001","mag":"2059345181"},"language":"en","primary_location":{"id":"doi:10.7567/jjap.50.065001","doi":"https://doi.org/10.7567/jjap.50.065001","is_oa":true,"landing_page_url":"https://doi.org/10.7567/jjap.50.065001","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.50.065001/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.50.065001/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Jamin Koo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jamin Koo","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul 136-713, Korea",", Korea University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul 136-713, Korea","institution_ids":["https://openalex.org/I197347611"]},{"raw_affiliation_string":", Korea University","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111476119","display_name":"Youngin Jeon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Youngin Jeon","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul 136-713, Korea",", Korea University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul 136-713, Korea","institution_ids":["https://openalex.org/I197347611"]},{"raw_affiliation_string":", Korea University","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043436190","display_name":"Myeongwon Lee","orcid":"https://orcid.org/0000-0003-3003-0625","observed_orcids":["https://orcid.org/0000-0003-3003-0625"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myeongwon Lee","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul 136-713, Korea",", Korea University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul 136-713, Korea","institution_ids":["https://openalex.org/I197347611"]},{"raw_affiliation_string":", Korea University","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010172715","display_name":"Sangsig Kim","orcid":"https://orcid.org/0000-0002-7246-8724","observed_orcids":["https://orcid.org/0000-0002-7246-8724"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangsig Kim","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul 136-713, Korea","School of Electrical Engineering"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul 136-713, Korea","institution_ids":["https://openalex.org/I197347611"]},{"raw_affiliation_string":"School of Electrical Engineering","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I197347611"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.2487,"has_fulltext":true,"cited_by_count":9,"citation_normalized_percentile":{"value":0.46444276,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"50","issue":"6R","first_page":"065001","last_page":"065001"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9023000001907349,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9023000001907349,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.09160000085830688,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.001500000013038516,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/field-effect-transistors","display_name":"field-effect transistors","score":0.921999990940094},{"id":"https://openalex.org/keywords/flexible-electronics","display_name":"flexible electronics","score":0.6959999799728394},{"id":"https://openalex.org/keywords/plastic-substrates","display_name":"plastic substrates","score":0.8650000095367432},{"id":"https://openalex.org/keywords/strain-effects","display_name":"strain effects","score":0.5879999995231628},{"id":"https://openalex.org/keywords/bending","display_name":"bending","score":0.4000000059604645},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.7540000081062317},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.9990000128746033},{"id":"https://openalex.org/keywords/mechanical-stability","display_name":"mechanical stability","score":0.5099999904632568}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.7399777173995972},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7388733625411987},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.7186416387557983},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.7053277492523193},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6626802682876587},{"id":"https://openalex.org/C87210426","wikidata":"https://www.wikidata.org/wiki/Q1072476","display_name":"Bending","level":2,"score":0.6450229287147522},{"id":"https://openalex.org/C138211643","wikidata":"https://www.wikidata.org/wiki/Q675211","display_name":"Bent molecular geometry","level":2,"score":0.6254150867462158},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.6039988994598389},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.5968747138977051},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.550621509552002},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.520430862903595},{"id":"https://openalex.org/C2778022156","wikidata":"https://www.wikidata.org/wiki/Q576145","display_name":"Strain (injury)","level":2,"score":0.5099912881851196},{"id":"https://openalex.org/C2986665194","wikidata":"https://www.wikidata.org/wiki/Q28324872","display_name":"Silicon nanowires","level":3,"score":0.460943341255188},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.37999945878982544},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.37354570627212524},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.18444150686264038},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C126322002","wikidata":"https://www.wikidata.org/wiki/Q11180","display_name":"Internal medicine","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.7567/jjap.50.065001","doi":"https://doi.org/10.7567/jjap.50.065001","is_oa":true,"landing_page_url":"https://doi.org/10.7567/jjap.50.065001","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.50.065001/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},{"id":"doi:10.1143/jjap.50.065001","doi":"https://doi.org/10.1143/jjap.50.065001","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.50.065001","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.7567/jjap.50.065001","doi":"https://doi.org/10.7567/jjap.50.065001","is_oa":true,"landing_page_url":"https://doi.org/10.7567/jjap.50.065001","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.50.065001/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1862474303","display_name":null,"funder_award_id":"10030559","funder_id":"https://openalex.org/F4320334879","funder_display_name":"Korea Evaluation Institute of Industrial Technology"},{"id":"https://openalex.org/G3805616885","display_name":null,"funder_award_id":"R32-2008-000-10082-0","funder_id":"https://openalex.org/F4320322349","funder_display_name":"Ministry of Education, Science and Technology"}],"funders":[{"id":"https://openalex.org/F4320322348","display_name":"Korea Science and Engineering Foundation","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320322349","display_name":"Ministry of Education, Science and Technology","ror":"https://ror.org/01p262204"},{"id":"https://openalex.org/F4320334879","display_name":"Korea Evaluation Institute of Industrial Technology","ror":"https://ror.org/03z9cwa38"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2059345181.pdf","grobid_xml":"https://content.openalex.org/works/W2059345181.grobid-xml"},"referenced_works_count":32,"referenced_works":["https://openalex.org/W91687147","https://openalex.org/W625204185","https://openalex.org/W1625611598","https://openalex.org/W1981279008","https://openalex.org/W1985555064","https://openalex.org/W1987844219","https://openalex.org/W1999589524","https://openalex.org/W2005025372","https://openalex.org/W2012951352","https://openalex.org/W2021141322","https://openalex.org/W2040575632","https://openalex.org/W2043411287","https://openalex.org/W2053337235","https://openalex.org/W2053535546","https://openalex.org/W2065776675","https://openalex.org/W2065793953","https://openalex.org/W2084614227","https://openalex.org/W2086103622","https://openalex.org/W2091485426","https://openalex.org/W2092333682","https://openalex.org/W2094433961","https://openalex.org/W2124340473","https://openalex.org/W2139171504","https://openalex.org/W2151066994","https://openalex.org/W2153162287","https://openalex.org/W2154869256","https://openalex.org/W2155605920","https://openalex.org/W2160425298","https://openalex.org/W2169965425","https://openalex.org/W2295038680","https://openalex.org/W2499638446","https://openalex.org/W4245796559"],"related_works":["https://openalex.org/W2337697505","https://openalex.org/W4403897552","https://openalex.org/W2053535546","https://openalex.org/W4210614345","https://openalex.org/W2289851789","https://openalex.org/W2053074047","https://openalex.org/W1996787970","https://openalex.org/W4309006715","https://openalex.org/W2064389457","https://openalex.org/W2557732718"],"abstract_inverted_index":{"Top-gate":[0],"field-effect":[1,29],"transistors":[2],"(FETs)":[3],"based":[4],"on":[5,24],"triangular":[6],"silicon":[7,13,19],"nanowires":[8],"(SiNWs)":[9],"obtained":[10],"from":[11,65],"a":[12,17,52],"bulk":[14],"wafer":[15],"using":[16],"conventional":[18],"manufacturing":[20],"technology":[21],"are":[22,34],"constructed":[23],"flexible":[25,70],"plastic":[26],"substrates.":[27],"Their":[28],"mobility":[30],"and":[31,43,83],"peak":[32],"transconductance":[33],"enhanced":[35],"by":[36,44],"10%":[37],"in":[38,46,74,79,86],"the":[39,47,58,66,69,75,80,84,89,103],"upwardly":[40],"bent":[41,49],"state":[42,50,77],"29%":[45],"downwardly":[48],"at":[51],"strain":[53,62,87],"of":[54,68,91],"1.02%,":[55],"compared":[56],"with":[57],"flat":[59],"state.":[60],"The":[61],"effect":[63],"resulting":[64],"bending":[67,102],"substrates":[71],"is":[72,98],"higher":[73],"downward":[76],"than":[78],"upward":[81],"state,":[82],"increase":[85],"improves":[88],"performance":[90,97],"SiNW-based":[92],"FETs.":[93],"Moreover,":[94],"their":[95],"device":[96],"stable":[99],"even":[100],"after":[101],"substrate":[104],"several":[105],"thousand":[106],"times.":[107]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2016-06-24T00:00:00"}