{"id":"https://openalex.org/W2058902001","doi":"https://doi.org/10.1116/1.583682","title":"Electrical properties of SrF2/InP (100) diodes and SrF2 thin films","display_name":"Electrical properties of SrF2/InP (100) diodes and SrF2 thin films","publication_year":1987,"publication_date":"1987-07-01","ids":{"openalex":"https://openalex.org/W2058902001","doi":"https://doi.org/10.1116/1.583682","mag":"2058902001"},"language":"en","primary_location":{"id":"doi:10.1116/1.583682","doi":"https://doi.org/10.1116/1.583682","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.583682","pdf_url":null,"source":{"id":"https://openalex.org/S4210191927","display_name":"Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena","issn_l":"0734-211X","issn":["0734-211X","2327-9877"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320061","host_organization_name":"AIP Publishing","host_organization_lineage":["https://openalex.org/P4310320061","https://openalex.org/P4310320257"],"host_organization_lineage_names":["AIP Publishing","American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108425340","display_name":"G. Couturier","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4396570533","display_name":"Universit\u00e9 Bordeaux-I","ror":"https://ror.org/001anga17","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530","https://openalex.org/I4396570533"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"G. Couturier","raw_affiliation_strings":["Laboratoire d\u2019Etudes des Mat\u00e9riaux pour La Micro\u00e9lectronique Universit\u00e9 de Bordeaux I-351, cours de La Lib\u00e9ration-33405 Talence, C\u00e9dex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire d\u2019Etudes des Mat\u00e9riaux pour La Micro\u00e9lectronique Universit\u00e9 de Bordeaux I-351, cours de La Lib\u00e9ration-33405 Talence, C\u00e9dex, France","institution_ids":["https://openalex.org/I15057530","https://openalex.org/I4396570533"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088159066","display_name":"A. Chaouki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4396570533","display_name":"Universit\u00e9 Bordeaux-I","ror":"https://ror.org/001anga17","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530","https://openalex.org/I4396570533"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. Chaouki","raw_affiliation_strings":["Laboratoire d\u2019Etudes des Mat\u00e9riaux pour La Micro\u00e9lectronique Universit\u00e9 de Bordeaux I-351, cours de La Lib\u00e9ration-33405 Talence, C\u00e9dex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire d\u2019Etudes des Mat\u00e9riaux pour La Micro\u00e9lectronique Universit\u00e9 de Bordeaux I-351, cours de La Lib\u00e9ration-33405 Talence, C\u00e9dex, France","institution_ids":["https://openalex.org/I15057530","https://openalex.org/I4396570533"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031460733","display_name":"H. Ricard","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4396570533","display_name":"Universit\u00e9 Bordeaux-I","ror":"https://ror.org/001anga17","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530","https://openalex.org/I4396570533"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"H. Ricard","raw_affiliation_strings":["Laboratoire d\u2019Etudes des Mat\u00e9riaux pour La Micro\u00e9lectronique Universit\u00e9 de Bordeaux I-351, cours de La Lib\u00e9ration-33405 Talence, C\u00e9dex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire d\u2019Etudes des Mat\u00e9riaux pour La Micro\u00e9lectronique Universit\u00e9 de Bordeaux I-351, cours de La Lib\u00e9ration-33405 Talence, C\u00e9dex, France","institution_ids":["https://openalex.org/I15057530","https://openalex.org/I4396570533"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114041840","display_name":"A.S. Barri\u00e8re","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4396570533","display_name":"Universit\u00e9 Bordeaux-I","ror":"https://ror.org/001anga17","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530","https://openalex.org/I4396570533"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. S. Barriere","raw_affiliation_strings":["Laboratoire d\u2019Etudes des Mat\u00e9riaux pour La Micro\u00e9lectronique Universit\u00e9 de Bordeaux I-351, cours de La Lib\u00e9ration-33405 Talence, C\u00e9dex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire d\u2019Etudes des Mat\u00e9riaux pour La Micro\u00e9lectronique Universit\u00e9 de Bordeaux I-351, cours de La Lib\u00e9ration-33405 Talence, C\u00e9dex, France","institution_ids":["https://openalex.org/I15057530","https://openalex.org/I4396570533"]}]},{"author_position":"last","author":{"id":null,"display_name":"C. Haw","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4396570533","display_name":"Universit\u00e9 Bordeaux-I","ror":"https://ror.org/001anga17","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530","https://openalex.org/I4396570533"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Haw","raw_affiliation_strings":["Laboratoire de Cristallographie et de Physique Cristalline Universit\u00e9 de Bordeaux I-351, cours de la Lib\u00e9ration-33405 Talence, C\u00e9dex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Cristallographie et de Physique Cristalline Universit\u00e9 de Bordeaux I-351, cours de la Lib\u00e9ration-33405 Talence, C\u00e9dex, France","institution_ids":["https://openalex.org/I15057530","https://openalex.org/I4396570533"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.0053,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.75896971,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"5","issue":"4","first_page":"870","last_page":"875"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8144999742507935,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8144999742507935,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.17520000040531158,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13889","display_name":"Advanced Materials and Semiconductor Technologies","score":0.0017000000225380063,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inp-100-substrate","display_name":"InP(100) substrate","score":0.8209999799728394},{"id":"https://openalex.org/keywords/sublimation-growth","display_name":"sublimation growth","score":0.6779999732971191},{"id":"https://openalex.org/keywords/capacitance-voltage-hysteresis","display_name":"capacitance-voltage hysteresis","score":0.8370000123977661},{"id":"https://openalex.org/keywords/surface-potential-modulation","display_name":"surface potential modulation","score":0.9520000219345093},{"id":"https://openalex.org/keywords/surface-state-density","display_name":"surface state density","score":0.9710000157356262},{"id":"https://openalex.org/keywords/space-charge-region","display_name":"depletion region","score":0.5170000195503235},{"id":"https://openalex.org/keywords/metal-semiconductor-junction","display_name":"metal-semiconductor contacts","score":0.7139999866485596}],"concepts":[{"id":"https://openalex.org/C137637335","wikidata":"https://www.wikidata.org/wiki/Q899604","display_name":"Crystallite","level":2,"score":0.7082086205482483},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6712284088134766},{"id":"https://openalex.org/C58437636","wikidata":"https://www.wikidata.org/wiki/Q217249","display_name":"Sublimation (psychology)","level":2,"score":0.5928378701210022},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5777515172958374},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5405645966529846},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.5164156556129456},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.49682381749153137},{"id":"https://openalex.org/C123299182","wikidata":"https://www.wikidata.org/wiki/Q190837","display_name":"Hysteresis","level":2,"score":0.4459366798400879},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.43644753098487854},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4316927492618561},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.41996991634368896},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1717315912246704},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1652228832244873},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12001562118530273},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.07212358713150024},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06446823477745056},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C542102704","wikidata":"https://www.wikidata.org/wiki/Q183257","display_name":"Psychotherapist","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.583682","doi":"https://doi.org/10.1116/1.583682","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.583682","pdf_url":null,"source":{"id":"https://openalex.org/S4210191927","display_name":"Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena","issn_l":"0734-211X","issn":["0734-211X","2327-9877"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320061","host_organization_name":"AIP Publishing","host_organization_lineage":["https://openalex.org/P4310320061","https://openalex.org/P4310320257"],"host_organization_lineage_names":["AIP Publishing","American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2038394700","https://openalex.org/W6922004661","https://openalex.org/W1923775339","https://openalex.org/W2040954303","https://openalex.org/W1980517398","https://openalex.org/W2062848391","https://openalex.org/W1640350424","https://openalex.org/W1990571899","https://openalex.org/W2071446891","https://openalex.org/W2070342052"],"abstract_inverted_index":{"Thin":[0],"films":[1],"of":[2,29,56,60,76,94],"SrF2,":[3],"with":[4,25],"a":[5,86],"lattice":[6],"parameter":[7],"close":[8],"to":[9],"InP,":[10],"have":[11],"been":[12],"grown":[13],"by":[14],"sublimation":[15],"under":[16],"vacuum":[17],"on":[18],"the":[19,26,30,44,57,69,73,77,98],"semiconductor.":[20],"This":[21],"paper":[22],"mainly":[23],"deals":[24],"electrical":[27],"properties":[28],"metal/polycrystalline":[31],"SrF2":[32],"layers/n-type":[33],"InP":[34,61],"(100)":[35],"structures.":[36],"For":[37,82],"sweep":[38,84],"rates":[39],"greater":[40],"than":[41],"10":[42],"Vs\u22121,":[43],"capacitance\u2013voltage":[45],"characteristics":[46],"do":[47],"not":[48],"show":[49],"any":[50],"significant":[51],"hysteresis.":[52],"An":[53],"important":[54],"modulation":[55],"surface":[58,65],"potential":[59],"is":[62,79,90],"observed.":[63],"The":[64],"state":[66],"density,":[67],"in":[68,92,97],"depletion":[70],"and":[71,89],"near":[72],"accumulation":[74],"regions":[75],"semiconductor":[78],"very":[80],"low.":[81],"low-voltage":[83],"frequencies":[85],"hysteresis":[87],"occurs":[88],"interpreted":[91],"terms":[93],"low-ionic":[95],"conductivity":[96],"polycrystalline":[99],"fluoride":[100],"layers.":[101]},"counts_by_year":[],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2016-06-24T00:00:00"}