{"id":"https://openalex.org/W2058769068","doi":"https://doi.org/10.1117/12.656164","title":"Defect studies of resist process for 193nm immersion lithography","display_name":"Defect studies of resist process for 193nm immersion lithography","publication_year":2006,"publication_date":"2006-03-10","ids":{"openalex":"https://openalex.org/W2058769068","doi":"https://doi.org/10.1117/12.656164","mag":"2058769068"},"language":"en","primary_location":{"id":"doi:10.1117/12.656164","doi":"https://doi.org/10.1117/12.656164","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.656164","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111759211","display_name":"Tomoyuki Ando","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210097131","display_name":"Tokyo Ohka Kogyo (Japan)","ror":"https://ror.org/00zrr9158","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210097131"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomoyuki Ando","raw_affiliation_strings":["Tokyo Ohka Kogyo Co., Ltd. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Ohka Kogyo Co., Ltd. (Japan)","institution_ids":["https://openalex.org/I4210097131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061778285","display_name":"Katsumi Ohmori","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210097131","display_name":"Tokyo Ohka Kogyo (Japan)","ror":"https://ror.org/00zrr9158","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210097131"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsumi Ohmori","raw_affiliation_strings":["Tokyo Ohka Kogyo Co., Ltd. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Ohka Kogyo Co., Ltd. (Japan)","institution_ids":["https://openalex.org/I4210097131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041428736","display_name":"Satoshi Maemori","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210097131","display_name":"Tokyo Ohka Kogyo (Japan)","ror":"https://ror.org/00zrr9158","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210097131"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Satoshi Maemori","raw_affiliation_strings":["Tokyo Ohka Kogyo Co., Ltd. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Ohka Kogyo Co., Ltd. (Japan)","institution_ids":["https://openalex.org/I4210097131"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Toshikazu Takayama","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210097131","display_name":"Tokyo Ohka Kogyo (Japan)","ror":"https://ror.org/00zrr9158","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210097131"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshikazu Takayama","raw_affiliation_strings":["Tokyo Ohka Kogyo Co., Ltd. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Ohka Kogyo Co., Ltd. (Japan)","institution_ids":["https://openalex.org/I4210097131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032234158","display_name":"Keita Ishizuka","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210097131","display_name":"Tokyo Ohka Kogyo (Japan)","ror":"https://ror.org/00zrr9158","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210097131"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Keita Ishizuka","raw_affiliation_strings":["Tokyo Ohka Kogyo Co., Ltd. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Ohka Kogyo Co., Ltd. (Japan)","institution_ids":["https://openalex.org/I4210097131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101696839","display_name":"Masaaki Yoshida","orcid":"https://orcid.org/0000-0002-5221-0320","observed_orcids":["https://orcid.org/0000-0002-5221-0320"]},"institutions":[{"id":"https://openalex.org/I4210097131","display_name":"Tokyo Ohka Kogyo (Japan)","ror":"https://ror.org/00zrr9158","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210097131"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masaaki Yoshida","raw_affiliation_strings":["Tokyo Ohka Kogyo Co., Ltd. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Ohka Kogyo Co., Ltd. (Japan)","institution_ids":["https://openalex.org/I4210097131"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Tomoyuki Hirano","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210097131","display_name":"Tokyo Ohka Kogyo (Japan)","ror":"https://ror.org/00zrr9158","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210097131"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomoyuki Hirano","raw_affiliation_strings":["Tokyo Ohka Kogyo Co., Ltd. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Ohka Kogyo Co., Ltd. (Japan)","institution_ids":["https://openalex.org/I4210097131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051258627","display_name":"Jiro Yokoya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210097131","display_name":"Tokyo Ohka Kogyo (Japan)","ror":"https://ror.org/00zrr9158","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210097131"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Jiro Yokoya","raw_affiliation_strings":["Tokyo Ohka Kogyo Co., Ltd. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Ohka Kogyo Co., Ltd. (Japan)","institution_ids":["https://openalex.org/I4210097131"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Katsushi Nakano","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210106587","display_name":"Nikon (Japan)","ror":"https://ror.org/01bvqg661","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210106587"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsushi Nakano","raw_affiliation_strings":["Nikon Corp. (Japan)","NIKON Corporation, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nikon Corp. (Japan)","institution_ids":["https://openalex.org/I4210106587"]},{"raw_affiliation_string":"NIKON Corporation, Japan","institution_ids":["https://openalex.org/I4210106587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065769757","display_name":"Tomoharu Fujiwara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210106587","display_name":"Nikon (Japan)","ror":"https://ror.org/01bvqg661","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210106587"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomoharu Fujiwara","raw_affiliation_strings":["Nikon Corp. (Japan)","NIKON Corporation, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nikon Corp. (Japan)","institution_ids":["https://openalex.org/I4210106587"]},{"raw_affiliation_string":"NIKON Corporation, Japan","institution_ids":["https://openalex.org/I4210106587"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016369044","display_name":"Soichi Owa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210106587","display_name":"Nikon (Japan)","ror":"https://ror.org/01bvqg661","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210106587"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Soichi Owa","raw_affiliation_strings":["Nikon Corp. (Japan)","NIKON Corporation, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nikon Corp. (Japan)","institution_ids":["https://openalex.org/I4210106587"]},{"raw_affiliation_string":"NIKON Corporation, Japan","institution_ids":["https://openalex.org/I4210106587"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.1651,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.91574148,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"6153","issue":null,"first_page":"615309","last_page":"615309"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11517","display_name":"Advanced optical system design","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12224","display_name":"Nanofabrication and Lithography Techniques","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/193-nm-immersion-lithography","display_name":"193 nm immersion lithography","score":0.9789999723434448},{"id":"https://openalex.org/keywords/dynamic-contact-angle","display_name":"dynamic contact angle","score":0.7620000243186951},{"id":"https://openalex.org/keywords/defectivity","display_name":"defectivity","score":0.6650000214576721},{"id":"https://openalex.org/keywords/depth-of-focus","display_name":"depth of focus","score":0.6610000133514404}],"concepts":[{"id":"https://openalex.org/C94263209","wikidata":"https://www.wikidata.org/wiki/Q1076175","display_name":"Immersion lithography","level":4,"score":0.9707333445549011},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.8981752395629883},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.8348724246025085},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7582089900970459},{"id":"https://openalex.org/C199068039","wikidata":"https://www.wikidata.org/wiki/Q574523","display_name":"Immersion (mathematics)","level":2,"score":0.7284678816795349},{"id":"https://openalex.org/C2777441419","wikidata":"https://www.wikidata.org/wiki/Q16969460","display_name":"Process window","level":3,"score":0.7120112180709839},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.6899017095565796},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.642095685005188},{"id":"https://openalex.org/C66018809","wikidata":"https://www.wikidata.org/wiki/Q1570432","display_name":"Semiconductor device fabrication","level":3,"score":0.500075101852417},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.43384912610054016},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3454025685787201},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2810670733451843},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.08721175789833069},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08336931467056274},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.656164","doi":"https://doi.org/10.1117/12.656164","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.656164","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2024835740","https://openalex.org/W1994893003","https://openalex.org/W2090701805","https://openalex.org/W2094073588","https://openalex.org/W1996456973","https://openalex.org/W2076945027","https://openalex.org/W2004690340","https://openalex.org/W2078232828","https://openalex.org/W2108268847","https://openalex.org/W2025922830"],"abstract_inverted_index":{"193nm":[0,22],"immersion":[1,23,104,172],"lithography":[2,24],"is":[3,25,77],"the":[4,10,26,38,51,62,80,86,96,112,118,134,143,150,158],"most":[5],"promising":[6],"lithographic":[7],"technology":[8],"for":[9,66],"semiconductor":[11],"device":[12],"manufacturing":[13],"of":[14,21,28,31,79,90,114,127,146],"65nm":[15],"node":[16],"and":[17,34,56,123,140,161,171],"below.":[18],"The":[19,70,121,137],"advantage":[20],"possibility":[27],"wider":[29],"depth":[30],"focus":[32],"(DOF)":[33],"higher":[35],"resolution":[36],"through":[37],"hyper":[39],"NA":[40],"lens":[41],"design":[42],"greater":[43],"than":[44],"1.0(1-3).":[45],"In":[46],"this":[47],"paper,":[48],"we":[49,110],"investigated":[50,111,131],"topcoat":[52,97,115,135,159],"material":[53],"film":[54,98],"characteristics":[55],"evaluated":[57],"its":[58],"performance":[59],"to":[60,84,132,156,165],"determine":[61],"chemical":[63],"properties":[64],"needed":[65],"a":[67],"practical":[68],"level.":[69],"stage":[71,101,167],"scan":[72,102,168],"speed":[73,169],"capability":[74,170],"evaluation,":[75],"which":[76],"one":[78],"best":[81],"available":[82],"method":[83],"test":[85],"suppression":[87],"or":[88],"generation":[89],"small":[91],"water":[92,128,147],"droplet":[93,129,148],"remains":[94],"on":[95],"at":[99,149],"high-speed":[100],"during":[103],"exposure,":[105],"was":[106],"used.":[107],"And":[108],"finally":[109],"defectivity":[113],"process":[116],"utilizing":[117],"Nikon":[119],"EET.":[120],"static":[122],"dynamic":[124,151],"contact":[125,144],"angles":[126],"were":[130,153],"characterize":[133,157],"material.":[136],"tilting":[138],"sliding":[139],"receding":[141],"angle,":[142],"angle":[145],"state,":[152],"important":[154],"parameters":[155],"materials":[160],"have":[162],"good":[163],"correlation":[164],"wafer":[166],"defect":[173],"count":[174],"reduction.":[175]},"counts_by_year":[{"year":2016,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}