{"id":"https://openalex.org/W2057784331","doi":"https://doi.org/10.1063/1.90678","title":"Pulsed-laser annealing of ion-implanted polycrystalline silicon films","display_name":"Pulsed-laser annealing of ion-implanted polycrystalline silicon films","publication_year":1979,"publication_date":"1979-06-01","ids":{"openalex":"https://openalex.org/W2057784331","doi":"https://doi.org/10.1063/1.90678","mag":"2057784331"},"language":"en","primary_location":{"id":"doi:10.1063/1.90678","doi":"https://doi.org/10.1063/1.90678","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.90678","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055058138","display_name":"Chih-Wei Wu","orcid":"https://orcid.org/0000-0002-9019-6515","observed_orcids":["https://orcid.org/0000-0002-9019-6515"]},"institutions":[{"id":"https://openalex.org/I2800295664","display_name":"RCA (United States)","ror":"https://ror.org/010k8n340","country_code":"US","type":"company","lineage":["https://openalex.org/I2800295664"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. P. Wu","raw_affiliation_strings":["RCA Laboratories, Princeton, New Jersey 08540"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RCA Laboratories, Princeton, New Jersey 08540","institution_ids":["https://openalex.org/I2800295664"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112414946","display_name":"C. W. Magee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2800295664","display_name":"RCA (United States)","ror":"https://ror.org/010k8n340","country_code":"US","type":"company","lineage":["https://openalex.org/I2800295664"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. W. Magee","raw_affiliation_strings":["RCA Laboratories, Princeton, New Jersey 08540"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RCA Laboratories, Princeton, New Jersey 08540","institution_ids":["https://openalex.org/I2800295664"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2800295664"],"apc_list":null,"apc_paid":null,"fwci":3.5379,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.93884671,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":87,"max":92},"biblio":{"volume":"34","issue":"11","first_page":"737","last_page":"739"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.4772999882698059,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.4772999882698059,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.447299987077713,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.03460000082850456,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pulsed-laser-annealing","display_name":"pulsed laser annealing","score":0.9470000267028809},{"id":"https://openalex.org/keywords/ion-implantation","display_name":"ion implantation","score":0.9900000095367432},{"id":"https://openalex.org/keywords/polycrystalline-silicon-thin-films","display_name":"polycrystalline silicon thin films","score":0.9589999914169312},{"id":"https://openalex.org/keywords/dopant-activation","display_name":"dopant activation","score":0.8889999985694885},{"id":"https://openalex.org/keywords/boron-implantation","display_name":"boron implantation","score":0.8450000286102295},{"id":"https://openalex.org/keywords/phosphorus-ion-implantation","display_name":"phosphorus implantation","score":0.9990000128746033},{"id":"https://openalex.org/keywords/arsenic-implantation","display_name":"arsenic implantation","score":0.996999979019165},{"id":"https://openalex.org/keywords/ruby-laser","display_name":"ruby laser","score":0.9800000190734863},{"id":"https://openalex.org/keywords/electrical-resistivity-reduction","display_name":"electrical resistivity reduction","score":0.7950000166893005},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.5120000243186951}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8396165370941162},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7691818475723267},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.7178285121917725},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6879674792289734},{"id":"https://openalex.org/C2778613923","wikidata":"https://www.wikidata.org/wiki/Q933263","display_name":"Ruby laser","level":3,"score":0.6677632331848145},{"id":"https://openalex.org/C2780565262","wikidata":"https://www.wikidata.org/wiki/Q737038","display_name":"Polycrystalline silicon","level":4,"score":0.6538850665092468},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.6281982660293579},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.5720958113670349},{"id":"https://openalex.org/C2780081452","wikidata":"https://www.wikidata.org/wiki/Q5297293","display_name":"Dopant Activation","level":4,"score":0.5531618595123291},{"id":"https://openalex.org/C137637335","wikidata":"https://www.wikidata.org/wiki/Q899604","display_name":"Crystallite","level":2,"score":0.5227565765380859},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.5103630423545837},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.5074009299278259},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.46454501152038574},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.45374804735183716},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.40979039669036865},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.20896953344345093},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.194248229265213},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.16139909625053406},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.10146713256835938},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.07189708948135376},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.90678","doi":"https://doi.org/10.1063/1.90678","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.90678","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1971113486","https://openalex.org/W1971826206","https://openalex.org/W1973669402","https://openalex.org/W1975324143","https://openalex.org/W1979185126","https://openalex.org/W2039963140","https://openalex.org/W2042861858","https://openalex.org/W2049254866","https://openalex.org/W2064783468","https://openalex.org/W2086114475"],"related_works":["https://openalex.org/W1590820633","https://openalex.org/W2995682418","https://openalex.org/W71584140","https://openalex.org/W2088911179","https://openalex.org/W1977239467","https://openalex.org/W2082979860","https://openalex.org/W3008303370","https://openalex.org/W2176747230","https://openalex.org/W2124224724","https://openalex.org/W2600601082"],"abstract_inverted_index":{"Polysilicon":[0],"films,":[1],"about":[2],"0.6":[3],"\u03bcm":[4],"thick,":[5],"deposited":[6],"on":[7,10],"SiO2":[8],"grown":[9],"silicon":[11],"substrates,":[12],"were":[13,82],"implanted":[14,42,71,89],"with":[15,27,48,75],"different":[16],"doses":[17],"of":[18,40,65,87],"11B,":[19],"31P,":[20],"or":[21,31,84],"75As":[22],"ions":[23,44],"and":[24,79],"laser":[25],"annealed":[26],"a":[28,49,59],"Q-switched":[29],"Nd-glass":[30],"ruby":[32],"laser.":[33],"It":[34],"was":[35],"found":[36],"that":[37,58,80],"complete":[38],"activation":[39],"the":[41,88],"dopant":[43],"could":[45,67],"be":[46,68],"achieved":[47,69],"pulse":[50],"power":[51],"density":[52],"as":[53,55],"low":[54],"16":[56],"MW/cm2,":[57],"two":[60],"to":[61],"three":[62],"times":[63],"reduction":[64],"resistivity":[66],"in":[70],"polysilicon":[72],"films":[73],"compared":[74],"samples":[76],"thermally":[77],"annealed,":[78],"there":[81],"little":[83],"no":[85],"redistributions":[86],"profiles.":[90]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2026-10-02T10:15:12.560889","created_date":"2016-06-24T00:00:00"}