{"id":"https://openalex.org/W2057091966","doi":"https://doi.org/10.1109/iedm.2011.6131553","title":"Single-grain Si TFTs using spin-coated liquid-silicon","display_name":"Single-grain Si TFTs using spin-coated liquid-silicon","publication_year":2011,"publication_date":"2011-12-01","ids":{"openalex":"https://openalex.org/W2057091966","doi":"https://doi.org/10.1109/iedm.2011.6131553","mag":"2057091966"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.2011.6131553","doi":"https://doi.org/10.1109/iedm.2011.6131553","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2011.6131553","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 International Electron Devices Meeting","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100405898","display_name":"Jin Zhang","orcid":"https://orcid.org/0000-0001-5462-3631","observed_orcids":["https://orcid.org/0000-0001-5462-3631","https://orcid.org/0000-0002-6691-5612","https://orcid.org/0009-0003-1130-6021","https://orcid.org/0000-0001-9906-3180"]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Jin Zhang","raw_affiliation_strings":["Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Delft, Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Delft, Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073553085","display_name":"Ryoichi Ishihara","orcid":"https://orcid.org/0000-0002-2114-4236","observed_orcids":["https://orcid.org/0000-0002-2114-4236"]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Ryoichi Ishihara","raw_affiliation_strings":["Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Delft, Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Delft, Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026257910","display_name":"Hideyuki Tagagishi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210086780","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19","country_code":"JP","type":"government","lineage":["https://openalex.org/I1319490839","https://openalex.org/I4210086780"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideyuki Tagagishi","raw_affiliation_strings":["ERATO, SHIMODA Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ERATO, SHIMODA Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa, Japan","institution_ids":["https://openalex.org/I4210086780"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034836679","display_name":"Ryo Kawajiri","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210086780","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19","country_code":"JP","type":"government","lineage":["https://openalex.org/I1319490839","https://openalex.org/I4210086780"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryo Kawajiri","raw_affiliation_strings":["ERATO, SHIMODA Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ERATO, SHIMODA Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa, Japan","institution_ids":["https://openalex.org/I4210086780"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108742071","display_name":"Tatsuya Shimoda","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I177738480","display_name":"Japan Advanced Institute of Science and Technology","ror":"https://ror.org/03frj4r98","country_code":"JP","type":"education","lineage":["https://openalex.org/I177738480"]},{"id":"https://openalex.org/I4210086780","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19","country_code":"JP","type":"government","lineage":["https://openalex.org/I1319490839","https://openalex.org/I4210086780"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tatsuya Shimoda","raw_affiliation_strings":["ERATO, SHIMODA Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa, Japan","School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ERATO, SHIMODA Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa, Japan","institution_ids":["https://openalex.org/I4210086780"]},{"raw_affiliation_string":"School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa, Japan","institution_ids":["https://openalex.org/I177738480"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016137226","display_name":"C.I.M. Beenakker","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"C.I.M. Beenakker","raw_affiliation_strings":["Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Delft, Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Delft, Netherlands","institution_ids":["https://openalex.org/I98358874"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.1183,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.85093726,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"14.5.1","last_page":"14.5.4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11523","display_name":"Nanomaterials and Printing Technologies","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/liquid-silicon","display_name":"liquid silicon","score":0.8339999914169312},{"id":"https://openalex.org/keywords/spin-coating","display_name":"spin coating","score":0.7379999756813049},{"id":"https://openalex.org/keywords/laser-induced-crystallization","display_name":"laser-induced crystallization","score":0.8560000061988831},{"id":"https://openalex.org/keywords/amorphous-silicon","display_name":"amorphous silicon","score":0.9110000133514404},{"id":"https://openalex.org/keywords/printed-electronics","display_name":"printed electronics","score":0.7300000190734863},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.7319999933242798},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.7990000247955322}],"concepts":[{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7523739337921143},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.7229222059249878},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5912319421768188},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.5119239091873169},{"id":"https://openalex.org/C47908070","wikidata":"https://www.wikidata.org/wiki/Q900515","display_name":"Grain boundary","level":3,"score":0.4523507058620453},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4331228733062744},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3873870372772217},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.34013643860816956},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.30696266889572144},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15265104174613953},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.14951816201210022},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.11971279978752136},{"id":"https://openalex.org/C87976508","wikidata":"https://www.wikidata.org/wiki/Q1498213","display_name":"Microstructure","level":2,"score":0.1172780692577362},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.08373543620109558},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.07954683899879456},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.2011.6131553","doi":"https://doi.org/10.1109/iedm.2011.6131553","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2011.6131553","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 International Electron Devices Meeting","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2035703289","https://openalex.org/W2041214760","https://openalex.org/W2091034024"],"related_works":["https://openalex.org/W1517824783","https://openalex.org/W2081303113","https://openalex.org/W2123656724","https://openalex.org/W2107890211","https://openalex.org/W2123110550","https://openalex.org/W1655517823","https://openalex.org/W2094339736","https://openalex.org/W4235482386","https://openalex.org/W2078278993","https://openalex.org/W2111380528"],"abstract_inverted_index":{"Liquid":[0],"silicon":[1],"offers":[2],"us":[3],"an":[4],"opportunity":[5],"of":[6,13,30,44],"fabricating":[7],"TFTs":[8,22],"using":[9],"printed":[10,14],"silicon,":[11],"instead":[12],"organic":[15],"materials.":[16],"We":[17],"have":[18],"fabricated":[19],"single-grain":[20],"Si":[21,25,37],"on":[23],"location-controlled":[24],"grains":[26,38],"with":[27,39],"laser":[28],"crystallization":[29],"a-Si":[31],"formed":[32],"from":[33],"spin-coated":[34],"liquid":[35],"Si.":[36],"a":[40],"maximum":[41],"grain":[42],"diameter":[43],"3.5":[45],"\u03bcm":[46],"were":[47],"positioned":[48],"at":[49],"predetermined":[50],"sites.":[51],"Mobilities":[52],"for":[53],"electrons":[54],"and":[55,60],"holes":[56],"are":[57],"391":[58],"cm2/Vs":[59],"111":[61],"cm2/Vs,":[62],"respectively.":[63]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":2}],"updated_date":"2026-11-05T12:25:35.769452","created_date":"2016-06-24T00:00:00"}