{"id":"https://openalex.org/W2056979930","doi":"https://doi.org/10.1109/ipec.2010.5542036","title":"Large current SiC power devices for automobile applications","display_name":"Large current SiC power devices for automobile applications","publication_year":2010,"publication_date":"2010-06-01","ids":{"openalex":"https://openalex.org/W2056979930","doi":"https://doi.org/10.1109/ipec.2010.5542036","mag":"2056979930"},"language":"en","primary_location":{"id":"doi:10.1109/ipec.2010.5542036","doi":"https://doi.org/10.1109/ipec.2010.5542036","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ipec.2010.5542036","pdf_url":null,"source":{"id":"https://openalex.org/S4306498370","display_name":"International Power Electronics Conference (IPEC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"The 2010 International Power Electronics Conference - ECCE ASIA -","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101990503","display_name":"Takashi Nakamura","orcid":"https://orcid.org/0000-0003-3069-8879","observed_orcids":["https://orcid.org/0000-0003-3069-8879"]},"institutions":[{"id":"https://openalex.org/I162282272","display_name":"ROHM","ror":"https://ror.org/00vttj605","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Nakamura","raw_affiliation_strings":["Rohm Company Limited, Kyoto, Japan","[ROHM Co., Ltd., Kyoto, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rohm Company Limited, Kyoto, Japan","institution_ids":["https://openalex.org/I162282272"]},{"raw_affiliation_string":"[ROHM Co., Ltd., Kyoto, Japan]","institution_ids":["https://openalex.org/I162282272"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074920377","display_name":"Masashi Sasagawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I162282272","display_name":"ROHM","ror":"https://ror.org/00vttj605","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Sasagawa","raw_affiliation_strings":["Rohm Company Limited, Kyoto, Japan","[ROHM Co., Ltd., Kyoto, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rohm Company Limited, Kyoto, Japan","institution_ids":["https://openalex.org/I162282272"]},{"raw_affiliation_string":"[ROHM Co., Ltd., Kyoto, Japan]","institution_ids":["https://openalex.org/I162282272"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010373939","display_name":"Yoshiaki Nakano","orcid":"https://orcid.org/0000-0002-2713-9542","observed_orcids":["https://orcid.org/0000-0002-2713-9542"]},"institutions":[{"id":"https://openalex.org/I162282272","display_name":"ROHM","ror":"https://ror.org/00vttj605","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Nakano","raw_affiliation_strings":["Rohm Company Limited, Kyoto, Japan","[ROHM Co., Ltd., Kyoto, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rohm Company Limited, Kyoto, Japan","institution_ids":["https://openalex.org/I162282272"]},{"raw_affiliation_string":"[ROHM Co., Ltd., Kyoto, Japan]","institution_ids":["https://openalex.org/I162282272"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108550186","display_name":"Tomoe Otsuka","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I162282272","display_name":"ROHM","ror":"https://ror.org/00vttj605","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Otsuka","raw_affiliation_strings":["Rohm Company Limited, Kyoto, Japan","[ROHM Co., Ltd., Kyoto, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rohm Company Limited, Kyoto, Japan","institution_ids":["https://openalex.org/I162282272"]},{"raw_affiliation_string":"[ROHM Co., Ltd., Kyoto, Japan]","institution_ids":["https://openalex.org/I162282272"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026459030","display_name":"Mineo Miura","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I162282272","display_name":"ROHM","ror":"https://ror.org/00vttj605","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Miura","raw_affiliation_strings":["Rohm Company Limited, Kyoto, Japan","[ROHM Co., Ltd., Kyoto, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rohm Company Limited, Kyoto, Japan","institution_ids":["https://openalex.org/I162282272"]},{"raw_affiliation_string":"[ROHM Co., Ltd., Kyoto, Japan]","institution_ids":["https://openalex.org/I162282272"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I162282272"],"apc_list":null,"apc_paid":null,"fwci":5.5612,"has_fulltext":false,"cited_by_count":26,"citation_normalized_percentile":{"value":0.97035385,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1023","last_page":"1026"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10132","display_name":"Advanced ceramic materials synthesis","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2503","display_name":"Ceramics and Composites"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sic-mosfet","display_name":"SiC MOSFET","score":0.7490000128746033},{"id":"https://openalex.org/keywords/sic-trench-mosfet","display_name":"SiC trench MOSFET","score":0.8679999709129333},{"id":"https://openalex.org/keywords/silicon-carbide-power-devices","display_name":"silicon carbide power devices","score":0.8059999942779541},{"id":"https://openalex.org/keywords/high-current-switching","display_name":"high-current switching","score":0.6539999842643738},{"id":"https://openalex.org/keywords/inductive-load-switching","display_name":"inductive load switching","score":0.8190000057220459},{"id":"https://openalex.org/keywords/high-operating-temperature","display_name":"high-temperature operation","score":0.9520000219345093},{"id":"https://openalex.org/keywords/high-temperature-joining","display_name":"high-temperature bonding","score":0.9309999942779541},{"id":"https://openalex.org/keywords/automotive-power-electronics","display_name":"automotive power electronics","score":0.8190000057220459}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8495030403137207},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7064286470413208},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.6754949688911438},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.6670794486999512},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.6067938208580017},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5953868627548218},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.5488139986991882},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5373365879058838},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4824596047401428},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.44959557056427},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.41957780718803406},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.34122228622436523},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.315578818321228},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.30283790826797485},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.19837304949760437},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.18004104495048523},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10251355171203613},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07000869512557983},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ipec.2010.5542036","doi":"https://doi.org/10.1109/ipec.2010.5542036","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ipec.2010.5542036","pdf_url":null,"source":{"id":"https://openalex.org/S4306498370","display_name":"International Power Electronics Conference (IPEC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"The 2010 International Power Electronics Conference - ECCE ASIA -","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7207000255584717,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"},{"score":0.5690000057220459,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320310058","display_name":"University of Arkansas","ror":"https://ror.org/05jbt9m15"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2079607687","https://openalex.org/W2122840051","https://openalex.org/W2134733953","https://openalex.org/W2135233772","https://openalex.org/W2136250228","https://openalex.org/W2171209056"],"related_works":["https://openalex.org/W2122496674","https://openalex.org/W2106227378","https://openalex.org/W2146644709","https://openalex.org/W1897050617","https://openalex.org/W2084184672","https://openalex.org/W2326245339","https://openalex.org/W2545982420","https://openalex.org/W3216781246","https://openalex.org/W2076994099","https://openalex.org/W1975345787"],"abstract_inverted_index":{"The":[0],"high":[1],"current":[2],"SiC":[3,10,26,35,39],"MOSFETs":[4,11],"and":[5,47],"high-temperature":[6,44,48],"operation":[7,37],"IPM":[8],"with":[9,41],"were":[12],"fabricated.":[13],"300A":[14],"switching":[15],"in":[16],"inductive":[17],"load":[18],"circuits":[19],"was":[20,52],"performed":[21],"using":[22],"a":[23,42],"single":[24],"chip":[25],"trench":[27],"MOSFET.":[28],"And":[29],"250\u00b0C":[30],"(the":[31],"junction":[32],"temperature":[33],"of":[34,38],"DMOSFETs)":[36],"IPMs":[40],"new":[43],"bonding":[45],"method":[46],"materials":[49],"(case,":[50],"encapsulation)":[51],"successfully":[53],"performed.":[54]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":5},{"year":2012,"cited_by_count":3}],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2016-06-24T00:00:00"}