{"id":"https://openalex.org/W2056500564","doi":"https://doi.org/10.1016/s0257-8972(97)00436-2","title":"Techniques for the sputtering of optimum indium-tin oxide films on to room-temperature substrates","display_name":"Techniques for the sputtering of optimum indium-tin oxide films on to room-temperature substrates","publication_year":1998,"publication_date":"1998-02-01","ids":{"openalex":"https://openalex.org/W2056500564","doi":"https://doi.org/10.1016/s0257-8972(97)00436-2","mag":"2056500564"},"language":"en","primary_location":{"id":"doi:10.1016/s0257-8972(97)00436-2","doi":"https://doi.org/10.1016/s0257-8972(97)00436-2","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0257-8972(97)00436-2","pdf_url":null,"source":{"id":"https://openalex.org/S76010543","display_name":"Surface and Coatings Technology","issn_l":"0257-8972","issn":["0257-8972","1879-3347"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Surface and Coatings Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010110334","display_name":"N. Danson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I143804889","display_name":"Loughborough University","ror":"https://ror.org/04vg4w365","country_code":"GB","type":"education","lineage":["https://openalex.org/I143804889"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"N. Danson","raw_affiliation_strings":["Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK","institution_ids":["https://openalex.org/I143804889"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108414045","display_name":"I. Safi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I143804889","display_name":"Loughborough University","ror":"https://ror.org/04vg4w365","country_code":"GB","type":"education","lineage":["https://openalex.org/I143804889"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"I. Safi","raw_affiliation_strings":["Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK","institution_ids":["https://openalex.org/I143804889"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028527105","display_name":"GW Hall","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I143804889","display_name":"Loughborough University","ror":"https://ror.org/04vg4w365","country_code":"GB","type":"education","lineage":["https://openalex.org/I143804889"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"G.W. Hall","raw_affiliation_strings":["Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK","institution_ids":["https://openalex.org/I143804889"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111709372","display_name":"R.P. Howson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I143804889","display_name":"Loughborough University","ror":"https://ror.org/04vg4w365","country_code":"GB","type":"education","lineage":["https://openalex.org/I143804889"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"R.P. Howson","raw_affiliation_strings":["Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK","institution_ids":["https://openalex.org/I143804889"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5111709372"],"corresponding_institution_ids":["https://openalex.org/I143804889"],"apc_list":{"value":3880,"currency":"USD","value_usd":3880},"apc_paid":null,"fwci":3.2594,"has_fulltext":false,"cited_by_count":38,"citation_normalized_percentile":{"value":0.90479583,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"99","issue":"1-2","first_page":"147","last_page":"160"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.4668000042438507,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.4668000042438507,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.35179999470710754,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13889","display_name":"Advanced Materials and Semiconductor Technologies","score":0.04390000179409981,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/indium-tin-oxide","display_name":"indium tin oxide","score":0.9350000023841858},{"id":"https://openalex.org/keywords/transparent-conducting-oxides","display_name":"transparent conducting oxides","score":0.8209999799728394},{"id":"https://openalex.org/keywords/oxygen-stoichiometry","display_name":"oxygen stoichiometry","score":0.6620000004768372},{"id":"https://openalex.org/keywords/sn-doping","display_name":"tin doping","score":0.8389999866485596},{"id":"https://openalex.org/keywords/electrical-conductivity","display_name":"electrical conductivity","score":0.8410000205039978},{"id":"https://openalex.org/keywords/optical-transparency","display_name":"optical transparency","score":0.8809999823570251},{"id":"https://openalex.org/keywords/argon-ion-bombardment","display_name":"argon ion bombardment","score":0.6850000023841858}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8176788687705994},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.7590941190719604},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.6837385892868042},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.6157288551330566},{"id":"https://openalex.org/C61427134","wikidata":"https://www.wikidata.org/wiki/Q847609","display_name":"Sputter deposition","level":4,"score":0.6022628545761108},{"id":"https://openalex.org/C32737372","wikidata":"https://www.wikidata.org/wiki/Q417718","display_name":"Indium tin oxide","level":3,"score":0.5842480063438416},{"id":"https://openalex.org/C68463220","wikidata":"https://www.wikidata.org/wiki/Q27165","display_name":"Partial pressure","level":3,"score":0.5344628095626831},{"id":"https://openalex.org/C123408415","wikidata":"https://www.wikidata.org/wiki/Q194154","display_name":"Cavity magnetron","level":4,"score":0.4732939600944519},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.45380666851997375},{"id":"https://openalex.org/C547737533","wikidata":"https://www.wikidata.org/wiki/Q696","display_name":"Argon","level":2,"score":0.4511045217514038},{"id":"https://openalex.org/C144082473","wikidata":"https://www.wikidata.org/wiki/Q213185","display_name":"Stoichiometry","level":2,"score":0.43962424993515015},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.43713468313217163},{"id":"https://openalex.org/C17470697","wikidata":"https://www.wikidata.org/wiki/Q2449552","display_name":"Transparent conducting film","level":3,"score":0.41525542736053467},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.410670667886734},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.4051051139831543},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.31816768646240234},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2144545316696167},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.14839190244674683},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.09031927585601807},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0257-8972(97)00436-2","doi":"https://doi.org/10.1016/s0257-8972(97)00436-2","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0257-8972(97)00436-2","pdf_url":null,"source":{"id":"https://openalex.org/S76010543","display_name":"Surface and Coatings Technology","issn_l":"0257-8972","issn":["0257-8972","1879-3347"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Surface and Coatings Technology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1626800832","https://openalex.org/W1965162838","https://openalex.org/W1975464092","https://openalex.org/W1987597009","https://openalex.org/W2002184087","https://openalex.org/W2015281835","https://openalex.org/W2016850843","https://openalex.org/W2028994055","https://openalex.org/W2032277893","https://openalex.org/W2032580232","https://openalex.org/W2033716477","https://openalex.org/W2034690894","https://openalex.org/W2070175293","https://openalex.org/W2077285954","https://openalex.org/W2161031594","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2010943754","https://openalex.org/W1998454247","https://openalex.org/W1992727139","https://openalex.org/W2070915742","https://openalex.org/W2051151751","https://openalex.org/W2037082524","https://openalex.org/W1974902752","https://openalex.org/W2032174338","https://openalex.org/W3015937036","https://openalex.org/W2044945796"],"abstract_inverted_index":null,"counts_by_year":[{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":4}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}