{"id":"https://openalex.org/W2055870710","doi":"https://doi.org/10.1016/j.matlet.2014.02.040","title":"Enhanced optical and electrical properties of NiO thin films prepared by rapid radiation pyrolysis method based on the sol\u2013gel technique","display_name":"Enhanced optical and electrical properties of NiO thin films prepared by rapid radiation pyrolysis method based on the sol\u2013gel technique","publication_year":2014,"publication_date":"2014-02-19","ids":{"openalex":"https://openalex.org/W2055870710","doi":"https://doi.org/10.1016/j.matlet.2014.02.040","mag":"2055870710"},"language":"en","primary_location":{"id":"doi:10.1016/j.matlet.2014.02.040","doi":"https://doi.org/10.1016/j.matlet.2014.02.040","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.matlet.2014.02.040","pdf_url":null,"source":{"id":"https://openalex.org/S55626769","display_name":"Materials Letters","issn_l":"0167-577X","issn":["0167-577X","1873-4979"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Letters","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W2055870710"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5039443729","display_name":"N. Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I7350606","display_name":"Dalian Jiaotong University","ror":"https://ror.org/05gp45n31","country_code":"CN","type":"education","lineage":["https://openalex.org/I7350606"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"N. Wang","raw_affiliation_strings":["Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China","institution_ids":["https://openalex.org/I7350606"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111834721","display_name":"Chunyan Liu","orcid":"https://orcid.org/0000-0003-0343-5897","observed_orcids":["https://orcid.org/0000-0003-0343-5897"]},"institutions":[{"id":"https://openalex.org/I7350606","display_name":"Dalian Jiaotong University","ror":"https://ror.org/05gp45n31","country_code":"CN","type":"education","lineage":["https://openalex.org/I7350606"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"C.Q. Liu","raw_affiliation_strings":["Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China","institution_ids":["https://openalex.org/I7350606"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101723580","display_name":"Bin Wen","orcid":"https://orcid.org/0000-0003-1459-7998","observed_orcids":["https://orcid.org/0000-0003-1459-7998"]},"institutions":[{"id":"https://openalex.org/I7350606","display_name":"Dalian Jiaotong University","ror":"https://ror.org/05gp45n31","country_code":"CN","type":"education","lineage":["https://openalex.org/I7350606"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"B. Wen","raw_affiliation_strings":["Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China","institution_ids":["https://openalex.org/I7350606"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003304871","display_name":"Hualin Wang","orcid":"https://orcid.org/0009-0005-8409-6488","observed_orcids":["https://orcid.org/0009-0005-8409-6488"]},"institutions":[{"id":"https://openalex.org/I7350606","display_name":"Dalian Jiaotong University","ror":"https://ror.org/05gp45n31","country_code":"CN","type":"education","lineage":["https://openalex.org/I7350606"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"H.L. Wang","raw_affiliation_strings":["Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China","institution_ids":["https://openalex.org/I7350606"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068049521","display_name":"S.M. Liu","orcid":"https://orcid.org/0009-0000-2667-5581","observed_orcids":["https://orcid.org/0009-0000-2667-5581"]},"institutions":[{"id":"https://openalex.org/I7350606","display_name":"Dalian Jiaotong University","ror":"https://ror.org/05gp45n31","country_code":"CN","type":"education","lineage":["https://openalex.org/I7350606"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"S.M. Liu","raw_affiliation_strings":["Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China","institution_ids":["https://openalex.org/I7350606"]}]},{"author_position":"last","author":{"id":null,"display_name":"W.P. Chai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I7350606","display_name":"Dalian Jiaotong University","ror":"https://ror.org/05gp45n31","country_code":"CN","type":"education","lineage":["https://openalex.org/I7350606"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"W.P. Chai","raw_affiliation_strings":["Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China","institution_ids":["https://openalex.org/I7350606"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5111834721"],"corresponding_institution_ids":["https://openalex.org/I7350606"],"apc_list":{"value":2870,"currency":"USD","value_usd":2870},"apc_paid":null,"fwci":1.7184,"has_fulltext":false,"cited_by_count":30,"citation_normalized_percentile":{"value":0.832024,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":98},"biblio":{"volume":"122","issue":null,"first_page":"269","last_page":"272"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.4629000127315521,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.4629000127315521,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13104","display_name":"Chemical and Physical Properties of Materials","score":0.27709999680519104,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.11190000176429749,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nickel-oxide-thin-films","display_name":"nickel oxide thin films","score":0.9010000228881836},{"id":"https://openalex.org/keywords/sol-gel-spin-coating","display_name":"sol-gel spin coating","score":0.9860000014305115},{"id":"https://openalex.org/keywords/optical-properties","display_name":"optical properties","score":0.7910000085830688},{"id":"https://openalex.org/keywords/electrical-resistivity","display_name":"electrical resistivity","score":0.8820000290870667},{"id":"https://openalex.org/keywords/carrier-concentration","display_name":"carrier concentration","score":0.8759999871253967},{"id":"https://openalex.org/keywords/absorption-coefficient","display_name":"absorption coefficient","score":0.9100000262260437},{"id":"https://openalex.org/keywords/optical-transmittance","display_name":"optical transmittance","score":0.8939999938011169},{"id":"https://openalex.org/keywords/pyrolysis-temperature","display_name":"pyrolysis temperature","score":0.9160000085830688},{"id":"https://openalex.org/keywords/cubic-nio","display_name":"cubic NiO","score":0.5799999833106995},{"id":"https://openalex.org/keywords/soft-chemistry-synthesis","display_name":"soft chemical synthesis","score":0.6819999814033508}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8872027397155762},{"id":"https://openalex.org/C74575197","wikidata":"https://www.wikidata.org/wiki/Q9941","display_name":"Non-blocking I/O","level":3,"score":0.8575199842453003},{"id":"https://openalex.org/C36759035","wikidata":"https://www.wikidata.org/wiki/Q176848","display_name":"Pyrolysis","level":2,"score":0.8049603700637817},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.7465453743934631},{"id":"https://openalex.org/C150493377","wikidata":"https://www.wikidata.org/wiki/Q1427863","display_name":"Transmittance","level":2,"score":0.6759005784988403},{"id":"https://openalex.org/C115196108","wikidata":"https://www.wikidata.org/wiki/Q1305254","display_name":"Spin coating","level":3,"score":0.5744078159332275},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5522685050964355},{"id":"https://openalex.org/C38398224","wikidata":"https://www.wikidata.org/wiki/Q48350","display_name":"Sol-gel","level":2,"score":0.5494595170021057},{"id":"https://openalex.org/C159774933","wikidata":"https://www.wikidata.org/wiki/Q902086","display_name":"Attenuation coefficient","level":2,"score":0.48703891038894653},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.44897639751434326},{"id":"https://openalex.org/C125287762","wikidata":"https://www.wikidata.org/wiki/Q1758948","display_name":"Absorption (acoustics)","level":2,"score":0.42429226636886597},{"id":"https://openalex.org/C2781448156","wikidata":"https://www.wikidata.org/wiki/Q1570182","display_name":"Coating","level":2,"score":0.4217948615550995},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.3873016834259033},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3747446835041046},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3193570673465729},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.3029196560382843},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2235577404499054},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.2125125229358673},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.08085751533508301},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.07653310894966125},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.matlet.2014.02.040","doi":"https://doi.org/10.1016/j.matlet.2014.02.040","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.matlet.2014.02.040","pdf_url":null,"source":{"id":"https://openalex.org/S55626769","display_name":"Materials Letters","issn_l":"0167-577X","issn":["0167-577X","1873-4979"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1625101956","display_name":null,"funder_award_id":"51302024","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7772872175","display_name":"CIGS\u8584\u819c\u7ed3\u6676\u53d6\u5411\u8bbe\u8ba1\u53ca\u5bf9\u5176\u5149\u4f0f\u6027\u80fd\u5f71\u54cd\u673a\u7406\u7684\u7814\u7a76","funder_award_id":"51002018","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1975158767","https://openalex.org/W2023054505","https://openalex.org/W2037888930","https://openalex.org/W2038985243","https://openalex.org/W2044110023","https://openalex.org/W2069165291","https://openalex.org/W2070914637","https://openalex.org/W2091871899","https://openalex.org/W2094955037","https://openalex.org/W2100284905","https://openalex.org/W2135771909"],"related_works":["https://openalex.org/W1965503307","https://openalex.org/W2047786812","https://openalex.org/W7216826027","https://openalex.org/W3182208556","https://openalex.org/W2393531254","https://openalex.org/W2330945585","https://openalex.org/W3033411409","https://openalex.org/W2654569435","https://openalex.org/W2056455718","https://openalex.org/W2975917896"],"abstract_inverted_index":null,"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":6},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}