{"id":"https://openalex.org/W2054745396","doi":"https://doi.org/10.1063/1.1471943","title":"Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)","display_name":"Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)","publication_year":2002,"publication_date":"2002-06-01","ids":{"openalex":"https://openalex.org/W2054745396","doi":"https://doi.org/10.1063/1.1471943","mag":"2054745396"},"language":"en","primary_location":{"id":"doi:10.1063/1.1471943","doi":"https://doi.org/10.1063/1.1471943","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1471943","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080334402","display_name":"A. Fissel","orcid":"https://orcid.org/0000-0002-0978-2382","observed_orcids":["https://orcid.org/0000-0002-0978-2382"]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"A. Fissel","raw_affiliation_strings":["IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081587399","display_name":"J. D\u0105browski","orcid":"https://orcid.org/0000-0003-0088-5390","observed_orcids":["https://orcid.org/0000-0003-0088-5390"]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. Da\u0327browski","raw_affiliation_strings":["IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5058800984","display_name":"H. J. Osten","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H. J. Osten","raw_affiliation_strings":["IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I92894754"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":14.0995,"has_fulltext":false,"cited_by_count":105,"citation_normalized_percentile":{"value":0.99177321,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"91","issue":"11","first_page":"8986","last_page":"8991"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9789999723434448,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9789999723434448,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.008700000122189522,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12039","display_name":"Electron and X-Ray Spectroscopy Techniques","score":0.00839999970048666,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/praseodymium-oxide","display_name":"praseodymium oxide","score":0.9909999966621399},{"id":"https://openalex.org/keywords/epitaxial-growth","display_name":"epitaxial growth","score":0.9419999718666077},{"id":"https://openalex.org/keywords/post-growth-annealing","display_name":"post-growth annealing","score":0.9290000200271606},{"id":"https://openalex.org/keywords/interface-dipole","display_name":"interface dipole","score":0.949999988079071},{"id":"https://openalex.org/keywords/oxygen-accumulation","display_name":"oxygen accumulation","score":0.7429999709129333},{"id":"https://openalex.org/keywords/core-level-binding-energy-shifts","display_name":"core-level binding energy shifts","score":0.9369999766349792},{"id":"https://openalex.org/keywords/valence-band-maximum","display_name":"valence band maximum","score":0.9539999961853027},{"id":"https://openalex.org/keywords/oxide-film-formation","display_name":"oxide film formation","score":0.45899999141693115}],"concepts":[{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.7627360820770264},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7593585252761841},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6586428880691528},{"id":"https://openalex.org/C132378524","wikidata":"https://www.wikidata.org/wiki/Q769463","display_name":"Pseudopotential","level":2,"score":0.632487416267395},{"id":"https://openalex.org/C2781442258","wikidata":"https://www.wikidata.org/wiki/Q46310","display_name":"Ab initio","level":2,"score":0.5960917472839355},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5873450040817261},{"id":"https://openalex.org/C51286037","wikidata":"https://www.wikidata.org/wiki/Q1139350","display_name":"Photoemission spectroscopy","level":3,"score":0.5536525845527649},{"id":"https://openalex.org/C183971685","wikidata":"https://www.wikidata.org/wiki/Q547605","display_name":"Ab initio quantum chemistry methods","level":3,"score":0.5180113911628723},{"id":"https://openalex.org/C93282013","wikidata":"https://www.wikidata.org/wiki/Q420754","display_name":"Binding energy","level":2,"score":0.5109981298446655},{"id":"https://openalex.org/C537997061","wikidata":"https://www.wikidata.org/wiki/Q1386","display_name":"Praseodymium","level":2,"score":0.48297277092933655},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4409690201282501},{"id":"https://openalex.org/C173523689","wikidata":"https://www.wikidata.org/wiki/Q215589","display_name":"Dipole","level":2,"score":0.4232054352760315},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3893877863883972},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.3738994896411896},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3578057289123535},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.3052297532558441},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1805601418018341},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.16802144050598145},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.13264191150665283},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.09832921624183655},{"id":"https://openalex.org/C32909587","wikidata":"https://www.wikidata.org/wiki/Q11369","display_name":"Molecule","level":2,"score":0.09473422169685364},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.09140649437904358},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1471943","doi":"https://doi.org/10.1063/1.1471943","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1471943","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":34,"referenced_works":["https://openalex.org/W154577535","https://openalex.org/W1522981767","https://openalex.org/W1572253984","https://openalex.org/W1612862975","https://openalex.org/W1612894395","https://openalex.org/W1638283060","https://openalex.org/W1982449519","https://openalex.org/W1990718414","https://openalex.org/W1992753351","https://openalex.org/W1995578906","https://openalex.org/W1995920390","https://openalex.org/W1997273948","https://openalex.org/W1998090905","https://openalex.org/W1998991681","https://openalex.org/W2005232247","https://openalex.org/W2013247371","https://openalex.org/W2026907619","https://openalex.org/W2039970342","https://openalex.org/W2045319904","https://openalex.org/W2048394656","https://openalex.org/W2048439883","https://openalex.org/W2052637367","https://openalex.org/W2054777542","https://openalex.org/W2055640329","https://openalex.org/W2058512563","https://openalex.org/W2063352886","https://openalex.org/W2069452080","https://openalex.org/W2071342387","https://openalex.org/W2072451721","https://openalex.org/W2073816687","https://openalex.org/W2086633026","https://openalex.org/W2116419449","https://openalex.org/W2118918130","https://openalex.org/W2136598943"],"related_works":["https://openalex.org/W2071902388","https://openalex.org/W2162979675","https://openalex.org/W2049848362","https://openalex.org/W2034333269","https://openalex.org/W2032426185","https://openalex.org/W2662547437","https://openalex.org/W1986669280","https://openalex.org/W3034299242","https://openalex.org/W2623706799","https://openalex.org/W1965656122"],"abstract_inverted_index":{"X-ray":[0],"photoelectron":[1],"spectroscopy":[2],"(XPS)":[3],"was":[4,33],"performed":[5],"to":[6,76],"study":[7],"the":[8,26,41,50,71,77,86,101],"formation":[9],"process":[10],"of":[11,79,92,103],"Pr2O3/Si(001)":[12],"interfaces":[13],"and":[14,19,28,54,89],"films":[15],"during":[16],"epitaxial":[17,108],"growth":[18,87,109],"postgrowth":[20],"annealing.":[21],"A":[22],"significant":[23],"shift":[24,39,47],"in":[25,40,70,104],"Pr":[27],"O":[29],"core-level":[30],"binding":[31],"energy":[32],"found":[34],"accompanied":[35],"by":[36,59,67],"an":[37],"analogous":[38],"Pr2O3":[42],"valence":[43],"band":[44],"maximum.":[45],"This":[46],"depends":[48],"on":[49,95],"oxide":[51],"layer":[52],"thickness":[53],"interface":[55,68,73,90],"structure,":[56],"as":[57],"indicated":[58],"ab":[60],"initio":[61],"pseudopotential":[62],"calculations.":[63],"It":[64],"is":[65],"caused":[66],"dipoles":[69],"Si/Pr2O3":[72],"region":[74],"due":[75],"accumulation":[78],"oxygen.":[80],"Besides":[81],"providing":[82],"a":[83],"insight":[84],"into":[85],"mechanism":[88],"properties":[91],"high-K":[93],"dielectrics":[94],"Si,":[96],"our":[97],"results":[98],"also":[99],"demonstrate":[100],"usefulness":[102],"vacuoXPS":[105],"for":[106],"investigating":[107],"processes.":[110]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":5},{"year":2012,"cited_by_count":3}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}