{"id":"https://openalex.org/W2054101375","doi":"https://doi.org/10.1117/12.946435","title":"Principle Of Laser Recording Mechanism By Forming An Alloy In The Multilayer Of Thin Metallic Films","display_name":"Principle Of Laser Recording Mechanism By Forming An Alloy In The Multilayer Of Thin Metallic Films","publication_year":1985,"publication_date":"1985-04-12","ids":{"openalex":"https://openalex.org/W2054101375","doi":"https://doi.org/10.1117/12.946435","mag":"2054101375"},"language":"en","primary_location":{"id":"doi:10.1117/12.946435","doi":"https://doi.org/10.1117/12.946435","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.946435","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5061437692","display_name":"Yasuaki Nakane","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasuaki Nakane","raw_affiliation_strings":["Sony Corporation (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Corporation (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063423983","display_name":"Noboru Sat\u00f4","orcid":"https://orcid.org/0000-0002-3526-6461","observed_orcids":["https://orcid.org/0000-0002-3526-6461"]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Noboru Sato","raw_affiliation_strings":["Sony Corporation (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Corporation (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003278716","display_name":"Hiroshi Makino","orcid":"https://orcid.org/0000-0001-6444-133X","observed_orcids":["https://orcid.org/0000-0001-6444-133X"]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Makino","raw_affiliation_strings":["Sony Corporation (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Corporation (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037359542","display_name":"Senri Miyaoka","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Senri Miyaoka","raw_affiliation_strings":["Sony Corporation (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Corporation (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210143797"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.15075377,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"0529","issue":null,"first_page":"76","last_page":"76"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10732","display_name":"Laser Material Processing Techniques","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2209","display_name":"Industrial and Manufacturing Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/alloy-formation","display_name":"alloy formation","score":0.31700000166893005},{"id":"https://openalex.org/keywords/thin-metal-films","display_name":"thin metal films","score":0.6819999814033508},{"id":"https://openalex.org/keywords/multilayer-interference","display_name":"multilayer interference","score":0.6830000281333923},{"id":"https://openalex.org/keywords/sb2se3","display_name":"Sb2Se3","score":0.8849999904632568},{"id":"https://openalex.org/keywords/bismuth-telluride","display_name":"Bi2Te3","score":0.9829999804496765},{"id":"https://openalex.org/keywords/reflectivity-change","display_name":"reflectivity change","score":0.5550000071525574},{"id":"https://openalex.org/keywords/sputtered-thin-films","display_name":"sputtered thin films","score":0.4620000123977661},{"id":"https://openalex.org/keywords/recording-sensitivity","display_name":"recording sensitivity","score":0.515999972820282}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8591594099998474},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6128603219985962},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.5993669629096985},{"id":"https://openalex.org/C2780477314","wikidata":"https://www.wikidata.org/wiki/Q241056","display_name":"Excimer laser","level":3,"score":0.5834184885025024},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.5633160471916199},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5557032227516174},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5352582931518555},{"id":"https://openalex.org/C2780026712","wikidata":"https://www.wikidata.org/wiki/Q37756","display_name":"Alloy","level":2,"score":0.5245875716209412},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5194779634475708},{"id":"https://openalex.org/C2779199891","wikidata":"https://www.wikidata.org/wiki/Q370593","display_name":"Disk laser","level":4,"score":0.46329009532928467},{"id":"https://openalex.org/C200649887","wikidata":"https://www.wikidata.org/wiki/Q17154544","display_name":"Laser power scaling","level":3,"score":0.4424358308315277},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.42693373560905457},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.35278403759002686},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.33638429641723633},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.28619420528411865},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.946435","doi":"https://doi.org/10.1117/12.946435","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.946435","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2022993918","https://openalex.org/W2035337776","https://openalex.org/W1970389300","https://openalex.org/W2015056703","https://openalex.org/W3005956077","https://openalex.org/W1997378819","https://openalex.org/W1992358150","https://openalex.org/W2034615642","https://openalex.org/W2315912736","https://openalex.org/W2010413202"],"abstract_inverted_index":{"An":[0],"optical":[1,95],"recording":[2,43,120,136,194],"disk":[3,13,62,80,172],"employing":[4],"an":[5,53],"alloy":[6,146],"mode":[7],"mechanism":[8,121],"has":[9,173],"been":[10,113],"developed.":[11],"The":[12,32,50,61,79,101,119,171,192],"is":[14,27,52,63,81,91,122],"a":[15,20,77,144,180],"plastic":[16,117],"substrate":[17,40],"on":[18,38,83,115,124,197],"which":[19,164,186],"multilayer":[21,154],"of":[22,45,160,183,204],"four":[23],"thin":[24],"metallic":[25],"films":[26],"formed":[28],"by":[29,147],"sputtering":[30],"deposition.":[31],"first":[33],"and":[34,47,56,73,99,108,141,176,201],"the":[35,39,42,57,94,105,116,128,131,135,138,150,153,158,166,187,198,205],"second":[36],"layers":[37,44,75],"are":[41,68],"Sb,Se,":[46],"Bi,Te,,":[48],"respectively.":[49],"third":[51],"adiabatic":[54],"layer":[55],"fourth":[58],"e-rdflectivb":[59],"layer.":[60],"double-bonded;":[64],"i.e.,":[65],"two":[66],"disks":[67],"bonded":[69],"together":[70],"with":[71],"protective":[72],"adhesive":[74],"like":[76],"sandwich.":[78],"recordable":[82],"one":[84],"or":[85],"both":[86],"sides.":[87],"A":[88],"laser":[89,102,132,181,206],"diode":[90],"used":[92],"as":[93],"source":[96],"for":[97],"reading":[98],"writing.":[100],"beam":[103,133],"scans":[104],"guide":[106],"groove":[107],"address":[109],"pits":[110],"that":[111],"have":[112],"embossed":[114],"substrate.":[118],"based":[123],"multiple":[125,162],"interference":[126],"in":[127,152],"multilayer.":[129],"When":[130],"heats":[134],"layers,":[137],"Sb2,":[139],"Se3,":[140],"Bi2,Te3,":[142],"form":[143],"four-element":[145],"diffusion.":[148],"Then":[149],"boundaries":[151],"disappear":[155],"to":[156],"change":[157],"condition":[159],"initial":[161],"interference,":[163],"increases":[165],"reflectivity":[167,188],"twice":[168],"to2four":[169],"times.":[170],"high":[174],"sensitivity":[175],"sharp":[177],"cutoff":[178],"at":[179],"power":[182,195],"0.8nJ/\u03bcm2,":[184],"below":[185],"does":[189],"not":[190],"change.":[191],"optimum":[193],"depends":[196],"scanning":[199],"velocity":[200],"pulse":[202],"duration":[203],"beam.":[207]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}