{"id":"https://openalex.org/W2053674573","doi":"https://doi.org/10.1088/0034-4885/69/2/r02","title":"High dielectric constant gate oxides for metal oxide Si transistors","display_name":"High dielectric constant gate oxides for metal oxide Si transistors","publication_year":2005,"publication_date":"2005-12-14","ids":{"openalex":"https://openalex.org/W2053674573","doi":"https://doi.org/10.1088/0034-4885/69/2/r02","mag":"2053674573"},"language":"en","primary_location":{"id":"doi:10.1088/0034-4885/69/2/r02","doi":"https://doi.org/10.1088/0034-4885/69/2/r02","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0034-4885/69/2/r02","pdf_url":"https://iopscience.iop.org/article/10.1088/0034-4885/69/2/R02/pdf","source":{"id":"https://openalex.org/S105282323","display_name":"Reports on Progress in Physics","issn_l":"0034-4885","issn":["0034-4885","1361-6633"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-3","medline","norway-2","poland-200","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Reports on Progress in Physics","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W2053674573"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1088/0034-4885/69/2/R02/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5056592766","display_name":"John Robertson","orcid":"https://orcid.org/0000-0001-6558-528X","observed_orcids":["https://orcid.org/0000-0001-6558-528X","https://orcid.org/0000-0002-6675-8469","https://orcid.org/0000-0001-9069-8980"]},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"John Robertson","raw_affiliation_strings":["Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK","institution_ids":["https://openalex.org/I241749"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5056592766"],"corresponding_institution_ids":["https://openalex.org/I241749"],"apc_list":{"value":4680,"currency":"USD","value_usd":4680},"apc_paid":null,"fwci":55.7361,"has_fulltext":true,"cited_by_count":1778,"citation_normalized_percentile":{"value":0.99965575,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":99,"max":100},"biblio":{"volume":"69","issue":"2","first_page":"327","last_page":"396"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.0007999999797903001,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-k-gate-dielectrics","display_name":"high-k gate dielectrics","score":0.9089999794960022},{"id":"https://openalex.org/keywords/hafnium-oxide","display_name":"hafnium oxide","score":0.9020000100135803},{"id":"https://openalex.org/keywords/hafnium-silicate","display_name":"hafnium silicate","score":0.996999979019165},{"id":"https://openalex.org/keywords/sio2-replacement","display_name":"SiO2 replacement","score":0.593999981880188},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.7239999771118164},{"id":"https://openalex.org/keywords/crystallization","display_name":"crystallization","score":0.6420000195503235},{"id":"https://openalex.org/keywords/electronic-defects","display_name":"electronic defects","score":0.8730000257492065},{"id":"https://openalex.org/keywords/charge-trapping","display_name":"charge trapping","score":0.6660000085830688},{"id":"https://openalex.org/keywords/oxygen-vacancies","display_name":"oxygen vacancies","score":0.875},{"id":"https://openalex.org/keywords/interfacial-reaction","display_name":"interfacial reaction","score":0.5669999718666077},{"id":"https://openalex.org/keywords/band-offset","display_name":"band offset","score":0.8360000252723694},{"id":"https://openalex.org/keywords/flatband-voltage-shift","display_name":"flatband voltage shift","score":0.7170000076293945},{"id":"https://openalex.org/keywords/mobility-degradation","display_name":"mobility degradation","score":0.722000002861023},{"id":"https://openalex.org/keywords/work-function-control","display_name":"work function control","score":0.8859999775886536},{"id":"https://openalex.org/keywords/atomic-diffusion","display_name":"atomic diffusion","score":0.550000011920929}],"concepts":[{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.6748212575912476},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.665848433971405},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.6133919358253479},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5813077092170715},{"id":"https://openalex.org/C52780932","wikidata":"https://www.wikidata.org/wiki/Q994752","display_name":"Equivalent oxide thickness","level":5,"score":0.5721780061721802},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5714898705482483},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.553817093372345},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5131664872169495},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4827634394168854},{"id":"https://openalex.org/C115235246","wikidata":"https://www.wikidata.org/wiki/Q783800","display_name":"Work function","level":3,"score":0.47205907106399536},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.46642786264419556},{"id":"https://openalex.org/C546638069","wikidata":"https://www.wikidata.org/wiki/Q1119","display_name":"Hafnium","level":3,"score":0.4631558954715729},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.4514637291431427},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4301321506500244},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2927396297454834},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2688053250312805},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1742938756942749},{"id":"https://openalex.org/C534791751","wikidata":"https://www.wikidata.org/wiki/Q1038","display_name":"Zirconium","level":2,"score":0.14753049612045288},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1311134397983551},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.12519335746765137},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1088/0034-4885/69/2/r02","doi":"https://doi.org/10.1088/0034-4885/69/2/r02","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0034-4885/69/2/r02","pdf_url":"https://iopscience.iop.org/article/10.1088/0034-4885/69/2/R02/pdf","source":{"id":"https://openalex.org/S105282323","display_name":"Reports on Progress in Physics","issn_l":"0034-4885","issn":["0034-4885","1361-6633"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-3","medline","norway-2","poland-200","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Reports on Progress in Physics","raw_type":"journal-article"},{"id":"pmh:oai:generic.eprints.org:334314","doi":null,"is_oa":false,"landing_page_url":"http://publications.eng.cam.ac.uk/334314/","pdf_url":null,"source":{"id":"https://openalex.org/S4406922847","display_name":"Cambridge University Engineering Department Publications Database","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":{"id":"doi:10.1088/0034-4885/69/2/r02","doi":"https://doi.org/10.1088/0034-4885/69/2/r02","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0034-4885/69/2/r02","pdf_url":"https://iopscience.iop.org/article/10.1088/0034-4885/69/2/R02/pdf","source":{"id":"https://openalex.org/S105282323","display_name":"Reports on Progress in Physics","issn_l":"0034-4885","issn":["0034-4885","1361-6633"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-3","medline","norway-2","poland-200","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Reports on Progress in Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2053674573.pdf","grobid_xml":"https://content.openalex.org/works/W2053674573.grobid-xml"},"referenced_works_count":234,"referenced_works":["https://openalex.org/W39428303","https://openalex.org/W45876196","https://openalex.org/W88929070","https://openalex.org/W154577535","https://openalex.org/W369684052","https://openalex.org/W589995197","https://openalex.org/W1481199830","https://openalex.org/W1485533239","https://openalex.org/W1493462079","https://openalex.org/W1494087470","https://openalex.org/W1496024054","https://openalex.org/W1506657362","https://openalex.org/W1512740549","https://openalex.org/W1520727819","https://openalex.org/W1527007735","https://openalex.org/W1537637599","https://openalex.org/W1539328025","https://openalex.org/W1539351377","https://openalex.org/W1541111966","https://openalex.org/W1544231337","https://openalex.org/W1548973125","https://openalex.org/W1552527487","https://openalex.org/W1560385599","https://openalex.org/W1572535934","https://openalex.org/W1592234784","https://openalex.org/W1601492715","https://openalex.org/W1611650845","https://openalex.org/W1612894395","https://openalex.org/W1638942675","https://openalex.org/W1646998796","https://openalex.org/W1651096419","https://openalex.org/W1657340635","https://openalex.org/W1664069585","https://openalex.org/W1668616817","https://openalex.org/W1671549006","https://openalex.org/W1904422208","https://openalex.org/W1965368032","https://openalex.org/W1967344810","https://openalex.org/W1967583500","https://openalex.org/W1970200102","https://openalex.org/W1970299035","https://openalex.org/W1973544784","https://openalex.org/W1975054790","https://openalex.org/W1976565175","https://openalex.org/W1976568552","https://openalex.org/W1977027254","https://openalex.org/W1977171682","https://openalex.org/W1977352735","https://openalex.org/W1978821705","https://openalex.org/W1979314093","https://openalex.org/W1979493194","https://openalex.org/W1980518634","https://openalex.org/W1983506956","https://openalex.org/W1983517222","https://openalex.org/W1983962655","https://openalex.org/W1984363888","https://openalex.org/W1985035555","https://openalex.org/W1986570588","https://openalex.org/W1986669280","https://openalex.org/W1987287595","https://openalex.org/W1987719520","https://openalex.org/W1987809799","https://openalex.org/W1988610712","https://openalex.org/W1990713771","https://openalex.org/W1991823658","https://openalex.org/W1991876866","https://openalex.org/W1991965248","https://openalex.org/W1993452662","https://openalex.org/W1993556524","https://openalex.org/W1993610987","https://openalex.org/W1993770631","https://openalex.org/W1995191254","https://openalex.org/W1996767128","https://openalex.org/W1998543041","https://openalex.org/W1998991681","https://openalex.org/W1999828042","https://openalex.org/W2000117025","https://openalex.org/W2000511385","https://openalex.org/W2000598577","https://openalex.org/W2000904597","https://openalex.org/W2001500846","https://openalex.org/W2001819609","https://openalex.org/W2001975177","https://openalex.org/W2002463868","https://openalex.org/W2003645630","https://openalex.org/W2004335187","https://openalex.org/W2006357728","https://openalex.org/W2007191828","https://openalex.org/W2008027055","https://openalex.org/W2008449124","https://openalex.org/W2008582040","https://openalex.org/W2009351484","https://openalex.org/W2011873780","https://openalex.org/W2012350557","https://openalex.org/W2013554803","https://openalex.org/W2014107617","https://openalex.org/W2014990474","https://openalex.org/W2015110219","https://openalex.org/W2015617493","https://openalex.org/W2015770003","https://openalex.org/W2016195065","https://openalex.org/W2018332778","https://openalex.org/W2019017977","https://openalex.org/W2019168245","https://openalex.org/W2019592005","https://openalex.org/W2020057893","https://openalex.org/W2021000452","https://openalex.org/W2022175767","https://openalex.org/W2022292172","https://openalex.org/W2025036984","https://openalex.org/W2025172217","https://openalex.org/W2025230095","https://openalex.org/W2025616067","https://openalex.org/W2025917378","https://openalex.org/W2026178187","https://openalex.org/W2026492183","https://openalex.org/W2026782553","https://openalex.org/W2026989175","https://openalex.org/W2028661136","https://openalex.org/W2028896230","https://openalex.org/W2029925702","https://openalex.org/W2029966628","https://openalex.org/W2030909711","https://openalex.org/W2031253525","https://openalex.org/W2033240845","https://openalex.org/W2033923136","https://openalex.org/W2033932712","https://openalex.org/W2034293321","https://openalex.org/W2035847539","https://openalex.org/W2036939019","https://openalex.org/W2038104609","https://openalex.org/W2038330453","https://openalex.org/W2040556071","https://openalex.org/W2041246757","https://openalex.org/W2041545740","https://openalex.org/W2042597481","https://openalex.org/W2043642475","https://openalex.org/W2043695984","https://openalex.org/W2044246855","https://openalex.org/W2046325020","https://openalex.org/W2046536833","https://openalex.org/W2047461582","https://openalex.org/W2048352026","https://openalex.org/W2048779921","https://openalex.org/W2048830380","https://openalex.org/W2049433113","https://openalex.org/W2049640847","https://openalex.org/W2051022102","https://openalex.org/W2052131334","https://openalex.org/W2052490648","https://openalex.org/W2052800099","https://openalex.org/W2053338534","https://openalex.org/W2053784345","https://openalex.org/W2053924397","https://openalex.org/W2054084603","https://openalex.org/W2054745396","https://openalex.org/W2055157455","https://openalex.org/W2055335548","https://openalex.org/W2056097598","https://openalex.org/W2056482876","https://openalex.org/W2056905904","https://openalex.org/W2057037894","https://openalex.org/W2057665591","https://openalex.org/W2060149528","https://openalex.org/W2060249374","https://openalex.org/W2061844299","https://openalex.org/W2061945872","https://openalex.org/W2062268908","https://openalex.org/W2063729689","https://openalex.org/W2066303531","https://openalex.org/W2067137469","https://openalex.org/W2068036292","https://openalex.org/W2069134906","https://openalex.org/W2069362588","https://openalex.org/W2069497154","https://openalex.org/W2070853273","https://openalex.org/W2072451721","https://openalex.org/W2072660350","https://openalex.org/W2072759665","https://openalex.org/W2073855249","https://openalex.org/W2074895580","https://openalex.org/W2075732988","https://openalex.org/W2076313449","https://openalex.org/W2076593871","https://openalex.org/W2076678221","https://openalex.org/W2076782232","https://openalex.org/W2077357007","https://openalex.org/W2080254265","https://openalex.org/W2082899117","https://openalex.org/W2084196976","https://openalex.org/W2084705906","https://openalex.org/W2085495374","https://openalex.org/W2086410702","https://openalex.org/W2088356707","https://openalex.org/W2090733716","https://openalex.org/W2091417196","https://openalex.org/W2091977611","https://openalex.org/W2092507167","https://openalex.org/W2092523530","https://openalex.org/W2094173734","https://openalex.org/W2095373465","https://openalex.org/W2095458202","https://openalex.org/W2100173633","https://openalex.org/W2100978358","https://openalex.org/W2101781928","https://openalex.org/W2102706597","https://openalex.org/W2105990677","https://openalex.org/W2110732177","https://openalex.org/W2112312021","https://openalex.org/W2112554416","https://openalex.org/W2125170016","https://openalex.org/W2127840831","https://openalex.org/W2130028915","https://openalex.org/W2134511326","https://openalex.org/W2137992210","https://openalex.org/W2139424966","https://openalex.org/W2139862546","https://openalex.org/W2142706417","https://openalex.org/W2142768970","https://openalex.org/W2144545104","https://openalex.org/W2145633302","https://openalex.org/W2147049941","https://openalex.org/W2148287452","https://openalex.org/W2150052292","https://openalex.org/W2159157634","https://openalex.org/W2164913436","https://openalex.org/W2166562246","https://openalex.org/W2169933013","https://openalex.org/W2327390577","https://openalex.org/W2580799792","https://openalex.org/W2993783326","https://openalex.org/W3101781882","https://openalex.org/W4234354442","https://openalex.org/W4241383922"],"related_works":["https://openalex.org/W2130028915","https://openalex.org/W179336027","https://openalex.org/W2023353733","https://openalex.org/W2758286770","https://openalex.org/W86826305","https://openalex.org/W3188419224","https://openalex.org/W2545639147","https://openalex.org/W2143847482"],"abstract_inverted_index":{"The":[0,159],"scaling":[1],"of":[2,45,47,99,124,185],"complementary":[3],"metal":[4,180,196],"oxide":[5,61],"semiconductor":[6],"transistors":[7],"has":[8],"led":[9],"to":[10,35,80,93,106],"the":[11,37,163,172,183],"silicon":[12],"dioxide":[13],"layer,":[14],"used":[15],"as":[16,59,90,110],"a":[17,41,91,96],"gate":[18,56,181,197],"dielectric,":[19],"being":[20],"so":[21],"thin":[22],"(1.4":[23],"nm)":[24],"that":[25,171],"its":[26],"leakage":[27],"current":[28],"is":[29,33,162,168,187],"too":[30],"large.":[31],"It":[32,167],"necessary":[34],"replace":[36],"SiO":[38,73,86],"2":[39,74,87],"with":[40,85,179],"physically":[42],"thicker":[43],"layer":[44],"oxides":[46,57,66,109,173],"higher":[48],"dielectric":[49],"constant":[50],"(\u03ba)":[51],"or":[52],"'high":[53],"K":[54],"'":[55],"such":[58,89],"hafnium":[60,63],"and":[62,76,95,120,130,137,149,154],"silicate.":[64],"These":[65],"had":[67],"not":[68],"been":[69],"extensively":[70],"studied":[71],"like":[72],",":[75,88],"they":[77],"were":[78],"found":[79],"have":[81],"inferior":[82],"properties":[83],"compared":[84],"tendency":[92],"crystallize":[94],"high":[97,111],"density":[98],"electronic":[100,113,140,145],"defects.":[101],"Intensive":[102],"research":[103],"was":[104],"needed":[105],"develop":[107],"these":[108],"quality":[112],"materials.":[114],"This":[115],"review":[116],"covers":[117],"both":[118],"scientific":[119],"technological":[121],"issues\u2014the":[122],"choice":[123],"oxides,":[125],"their":[126,128,139],"deposition,":[127],"structural":[129],"metallurgical":[131],"behaviour,":[132],"atomic":[133],"diffusion,":[134],"interface":[135],"structure":[136],"reactions,":[138],"structure,":[141],"bonding,":[142],"band":[143,156],"offsets,":[144],"defects,":[146],"charge":[147],"trapping":[148],"conduction":[150],"mechanisms,":[151],"mobility":[152],"degradation":[153],"flat":[155],"voltage":[157],"shifts.":[158],"oxygen":[160],"vacancy":[161],"dominant":[164],"electron":[165],"trap.":[166],"turning":[169],"out":[170],"must":[174],"be":[175],"implemented":[176],"in":[177,195],"conjunction":[178],"electrodes,":[182],"development":[184],"which":[186],"further":[188],"behind.":[189],"Issues":[190],"about":[191],"work":[192],"function":[193],"control":[194],"electrodes":[198],"are":[199],"discussed.":[200]},"counts_by_year":[{"year":2026,"cited_by_count":102},{"year":2025,"cited_by_count":60},{"year":2024,"cited_by_count":49},{"year":2023,"cited_by_count":70},{"year":2022,"cited_by_count":59},{"year":2021,"cited_by_count":56},{"year":2020,"cited_by_count":58},{"year":2019,"cited_by_count":81},{"year":2018,"cited_by_count":72},{"year":2017,"cited_by_count":72},{"year":2016,"cited_by_count":111},{"year":2015,"cited_by_count":116},{"year":2014,"cited_by_count":106},{"year":2013,"cited_by_count":112},{"year":2012,"cited_by_count":122}],"updated_date":"2026-11-14T11:04:58.165337","created_date":"2016-06-24T00:00:00"}