{"id":"https://openalex.org/W2053389350","doi":"https://doi.org/10.1109/apec.2013.6520272","title":"Full SiC power module with advanced structure and its solar inverter application","display_name":"Full SiC power module with advanced structure and its solar inverter application","publication_year":2013,"publication_date":"2013-03-01","ids":{"openalex":"https://openalex.org/W2053389350","doi":"https://doi.org/10.1109/apec.2013.6520272","mag":"2053389350"},"language":"en","primary_location":{"id":"doi:10.1109/apec.2013.6520272","doi":"https://doi.org/10.1109/apec.2013.6520272","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apec.2013.6520272","pdf_url":null,"source":{"id":"https://openalex.org/S4210177957","display_name":"Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition","issn_l":"1048-2334","issn":["1048-2334","2470-6647"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5054863392","display_name":"Yuichiro Hinata","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuichiro Hinata","raw_affiliation_strings":["Electronic Device Laboratory, Fuji Electric Company Limited, Matsumoto, Nagano, Japan","Electron. Device Lab., Fuji Electr. Co., Ltd., Nagano, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Device Laboratory, Fuji Electric Company Limited, Matsumoto, Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]},{"raw_affiliation_string":"Electron. Device Lab., Fuji Electr. Co., Ltd., Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053518168","display_name":"Masafumi Horio","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masafumi Horio","raw_affiliation_strings":["Electronic Device Laboratory, Fuji Electric Company Limited, Matsumoto, Nagano, Japan","Electron. Device Lab., Fuji Electr. Co., Ltd., Nagano, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Device Laboratory, Fuji Electric Company Limited, Matsumoto, Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]},{"raw_affiliation_string":"Electron. Device Lab., Fuji Electr. Co., Ltd., Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079290368","display_name":"Yoshinari Ikeda","orcid":"https://orcid.org/0009-0003-9995-6095","observed_orcids":["https://orcid.org/0009-0003-9995-6095"]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshinari Ikeda","raw_affiliation_strings":["Electronic Device Laboratory, Fuji Electric Company Limited, Matsumoto, Nagano, Japan","Electron. Device Lab., Fuji Electr. Co., Ltd., Nagano, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Device Laboratory, Fuji Electric Company Limited, Matsumoto, Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]},{"raw_affiliation_string":"Electron. Device Lab., Fuji Electr. Co., Ltd., Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077419460","display_name":"Ryuji Yamada","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryuji Yamada","raw_affiliation_strings":["Electronic Device Laboratory, Fuji Electric Company Limited, Matsumoto, Nagano, Japan","Electron. Device Lab., Fuji Electr. Co., Ltd., Nagano, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Device Laboratory, Fuji Electric Company Limited, Matsumoto, Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]},{"raw_affiliation_string":"Electron. Device Lab., Fuji Electr. Co., Ltd., Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101772261","display_name":"Yoshikazu Takahashi","orcid":"https://orcid.org/0009-0005-2435-5142","observed_orcids":["https://orcid.org/0009-0005-2435-5142"]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshikazu Takahashi","raw_affiliation_strings":["Electronic Device Laboratory, Fuji Electric Company Limited, Matsumoto, Nagano, Japan","Electron. Device Lab., Fuji Electr. Co., Ltd., Nagano, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Device Laboratory, Fuji Electric Company Limited, Matsumoto, Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]},{"raw_affiliation_string":"Electron. Device Lab., Fuji Electr. Co., Ltd., Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2799635668"],"apc_list":null,"apc_paid":null,"fwci":7.3308,"has_fulltext":false,"cited_by_count":54,"citation_normalized_percentile":{"value":0.9839787,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"604","last_page":"607"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sic-power-modules","display_name":"SiC power modules","score":0.8650000095367432},{"id":"https://openalex.org/keywords/sic-mosfet","display_name":"SiC MOSFET","score":0.9039999842643738},{"id":"https://openalex.org/keywords/sic-schottky-diodes","display_name":"SiC Schottky diodes","score":0.953000009059906},{"id":"https://openalex.org/keywords/photovoltaic-inverter","display_name":"photovoltaic inverter","score":0.8960000276565552},{"id":"https://openalex.org/keywords/thermal-impedance","display_name":"thermal impedance","score":0.5860000252723694},{"id":"https://openalex.org/keywords/high-operating-temperature","display_name":"high-temperature operation","score":0.6179999709129333},{"id":"https://openalex.org/keywords/inverter-efficiency","display_name":"inverter efficiency","score":0.7369999885559082}],"concepts":[{"id":"https://openalex.org/C141812795","wikidata":"https://www.wikidata.org/wiki/Q7236534","display_name":"Power module","level":3,"score":0.6664119958877563},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6615597605705261},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6071171164512634},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5597739815711975},{"id":"https://openalex.org/C177564732","wikidata":"https://www.wikidata.org/wiki/Q7698333","display_name":"Temperature cycling","level":3,"score":0.5218381285667419},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.47562482953071594},{"id":"https://openalex.org/C2777900271","wikidata":"https://www.wikidata.org/wiki/Q17105337","display_name":"Power cycling","level":4,"score":0.45489707589149475},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.44521671533584595},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.44377437233924866},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.4378422796726227},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4332708716392517},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.4254891276359558},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.41182979941368103},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4103953242301941},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3407818675041199},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.3202868700027466},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25356197357177734},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.19911009073257446},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/apec.2013.6520272","doi":"https://doi.org/10.1109/apec.2013.6520272","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apec.2013.6520272","pdf_url":null,"source":{"id":"https://openalex.org/S4210177957","display_name":"Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition","issn_l":"1048-2334","issn":["1048-2334","2470-6647"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.9853000044822693},{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.8970999717712402}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1934148992","https://openalex.org/W2117186315","https://openalex.org/W2125332366","https://openalex.org/W2139325394"],"related_works":["https://openalex.org/W2075702399","https://openalex.org/W2969114873","https://openalex.org/W1967128503","https://openalex.org/W1555943660","https://openalex.org/W2109270344","https://openalex.org/W2120709456","https://openalex.org/W2525318839","https://openalex.org/W2146113912","https://openalex.org/W2082298995","https://openalex.org/W2737568290"],"abstract_inverted_index":{"This":[0,18,40],"paper":[1],"describes":[2],"advanced":[3,19,72],"power":[4,9,20,43,60,69,100,117,126,133],"module":[5,44,118],"structure":[6,45],"for":[7],"high":[8,11,47,78,93,97,104],"and":[10,34,87,96,109,121,144,149],"frequency":[12],"application":[13],"with":[14,49,123],"solar":[15,154],"inverter":[16,110,155],"system.":[17,156],"modules":[21],"is":[22,81],"applied":[23],"full":[24,41,89,115],"SiC":[25,29,35,42,116],"semiconductor":[26],"which":[27,63],"has":[28,64,136,141],"MOSFET":[30],"(Metal-Oxide-Semiconductor":[31],"Field-Effect":[32],"Transistor)":[33],"SBD":[36],"(Schottky":[37],"Barrier":[38],"Diode).":[39],"realizes":[46],"reliability":[48],"low":[50,142,145],"thermal":[51,85],"impedance":[52,86],"by":[53],"using":[54],"these":[55],"new":[56],"three":[57],"technology,":[58],"i)":[59],"circuit":[61],"board":[62],"copper":[65],"pins":[66],"connected":[67],"to":[68,83],"devices,":[70],"ii)":[71],"ceramic":[73],"insulated":[74],"substrate":[75],"that":[76,131],"enables":[77],"heat":[79],"dissipation":[80],"utilized":[82],"reduce":[84],"iii)":[88],"molded":[90],"package":[91],"achieves":[92],"temperature":[94,105],"operation":[95],"reliability.":[98],"The":[99,128],"cycling":[101,134],"test":[102],"at":[103,153],"(200deg.C),":[106],"electrical":[107,139],"characteristics":[108,140],"system":[111],"efficiency":[112,152],"of":[113,151],"this":[114],"were":[119],"evaluated":[120],"compared":[122],"conventional":[124],"Si":[125],"module.":[127],"results":[129],"showed":[130],"the":[132],"lifetime":[135],"x50":[137],"capability,":[138],"loss":[143],"turn-off":[146],"surge":[147],"voltage,":[148],"99.0%":[150]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":7},{"year":2017,"cited_by_count":10},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":7},{"year":2014,"cited_by_count":6}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}