{"id":"https://openalex.org/W2053129643","doi":"https://doi.org/10.1109/iedm.1982.190257","title":"Electrical properties of MOS devices made with SILO technology","display_name":"Electrical properties of MOS devices made with SILO technology","publication_year":1982,"publication_date":"1982-01-01","ids":{"openalex":"https://openalex.org/W2053129643","doi":"https://doi.org/10.1109/iedm.1982.190257","mag":"2053129643"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.1982.190257","doi":"https://doi.org/10.1109/iedm.1982.190257","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.1982.190257","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"1982 International Electron Devices Meeting","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074169056","display_name":"Jonathan Hui","orcid":"https://orcid.org/0009-0007-3216-4703","observed_orcids":["https://orcid.org/0009-0007-3216-4703"]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Hui","raw_affiliation_strings":["Department of Electrical Engineering and Computer sciences and the Electronics Research Laboratory, University of California, Berkeley, CA, USA","Univ. of California-Berkeley, CA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer sciences and the Electronics Research Laboratory, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]},{"raw_affiliation_string":"Univ. of California-Berkeley, CA#TAB#","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111933803","display_name":"T.-Y. Chiu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T.Y. Chiu","raw_affiliation_strings":["Department of Electrical Engineering and Computer sciences and the Electronics Research Laboratory, University of California, Berkeley, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer sciences and the Electronics Research Laboratory, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101727468","display_name":"S.S. Wong","orcid":"https://orcid.org/0000-0003-4361-1744","observed_orcids":["https://orcid.org/0000-0003-4361-1744"]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Wong","raw_affiliation_strings":["Department of Electrical Engineering and Computer sciences and the Electronics Research Laboratory, University of California, Berkeley, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer sciences and the Electronics Research Laboratory, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080115257","display_name":"William G. Oldham","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W.G. Oldham","raw_affiliation_strings":["Department of Electrical Engineering and Computer sciences and the Electronics Research Laboratory, University of California, Berkeley, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer sciences and the Electronics Research Laboratory, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I95457486"],"apc_list":null,"apc_paid":null,"fwci":2.0862,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.84869781,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"220","last_page":"223"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6455000042915344,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6455000042915344,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.34549999237060547,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0026000000070780516,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mos-transistors","display_name":"MOS transistors","score":0.8889999985694885},{"id":"https://openalex.org/keywords/nmos","display_name":"NMOS","score":0.7229999899864197},{"id":"https://openalex.org/keywords/current-drive-capability","display_name":"current drive capability","score":0.8989999890327454},{"id":"https://openalex.org/keywords/parasitic-effects","display_name":"parasitic effects","score":0.9340000152587891},{"id":"https://openalex.org/keywords/junction-leakage","display_name":"junction leakage","score":0.9509999752044678},{"id":"https://openalex.org/keywords/crystal-defects","display_name":"crystal defects","score":0.6669999957084656}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.8521808385848999},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7757884860038757},{"id":"https://openalex.org/C2778024958","wikidata":"https://www.wikidata.org/wiki/Q213643","display_name":"Silo","level":2,"score":0.6473337411880493},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5843508243560791},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5665991902351379},{"id":"https://openalex.org/C195114451","wikidata":"https://www.wikidata.org/wiki/Q1798244","display_name":"LOCOS","level":4,"score":0.5609874725341797},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.4533991813659668},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40251457691192627},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3873521685600281},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.17776444554328918},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.157802015542984},{"id":"https://openalex.org/C26953177","wikidata":"https://www.wikidata.org/wiki/Q3960534","display_name":"Monocrystalline silicon","level":3,"score":0.10826334357261658},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09478995203971863}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.1982.190257","doi":"https://doi.org/10.1109/iedm.1982.190257","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.1982.190257","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"1982 International Electron Devices Meeting","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.7207000255584717,"display_name":"Industry, innovation and infrastructure"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W2155855430"],"related_works":["https://openalex.org/W2005337151","https://openalex.org/W2077946280","https://openalex.org/W3151359546","https://openalex.org/W1600661124","https://openalex.org/W1999698559","https://openalex.org/W2536808329","https://openalex.org/W2542240005","https://openalex.org/W2104504400","https://openalex.org/W3093739254","https://openalex.org/W2071301954"],"abstract_inverted_index":{"The":[0],"physical":[1],"and":[2,22,33,69,75],"electrical":[3,60],"parameters":[4],"of":[5,49],"Sealed":[6],"Interface":[7],"Local":[8],"Oxidation":[9],"(SILO)":[10],"technology":[11,21],"are":[12,27,73,89],"explored":[13],"in":[14,43,90],"this":[15],"paper.":[16],"Devices":[17],"fabricated":[18,53,79],"with":[19,54,80],"SILO":[20,63],"a":[23,40,81],"standard":[24],"NMOS":[25],"process":[26],"characterized":[28],"for":[29],"current":[30,44],"drive":[31],"capability":[32],"parasitic":[34],"effects.":[35],"MOS":[36],"transistors":[37],"(W/L=3/20)":[38],"show":[39],"68%":[41],"improvement":[42],"density":[45],"compared":[46],"to":[47,77],"devices":[48,64,78],"the":[50],"same":[51],"geometry":[52],"conventional":[55,82],"local":[56],"oxidation":[57],"technology.":[58],"Extensive":[59],"characterization":[61],"on":[62],"shows":[65],"that":[66],"junction":[67],"leakages":[68,72],"transistor":[70],"sidewall":[71],"low":[74],"comparable":[76],"LOCOS":[83],"process.":[84],"Crystal":[85],"defect":[86,94],"decoration":[87],"studies":[88],"agreement,":[91],"showing":[92],"no":[93],"generation.":[95]},"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-29T09:56:32.521200","created_date":"2016-06-24T00:00:00"}