{"id":"https://openalex.org/W2052227855","doi":"https://doi.org/10.1143/jjap.38.635","title":"Drastic Improvement in Surface Flatness Properties by Using GaAs (111)A Substrates in Molecular Beam Epitaxy","display_name":"Drastic Improvement in Surface Flatness Properties by Using GaAs (111)A Substrates in Molecular Beam Epitaxy","publication_year":1999,"publication_date":"1999-02-01","ids":{"openalex":"https://openalex.org/W2052227855","doi":"https://doi.org/10.1143/jjap.38.635","mag":"2052227855"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.38.635","doi":"https://doi.org/10.1143/jjap.38.635","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.38.635","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058592159","display_name":"Hiroshi Yamaguchi","orcid":"https://orcid.org/0000-0003-3801-4857","observed_orcids":["https://orcid.org/0000-0003-3801-4857"]},"institutions":[{"id":"https://openalex.org/I4210105847","display_name":"NTT Basic Research Laboratories","ror":"https://ror.org/01m2pas06","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210105847"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Yamaguchi","raw_affiliation_strings":["NTT Basic Research Laboratories, Morinosato-Wakamiya,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Basic Research Laboratories, Morinosato-Wakamiya,","institution_ids":["https://openalex.org/I4210105847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056714217","display_name":"Yoshikazu Homma","orcid":"https://orcid.org/0000-0002-6327-3888","observed_orcids":["https://orcid.org/0000-0002-6327-3888"]},"institutions":[{"id":"https://openalex.org/I4210105847","display_name":"NTT Basic Research Laboratories","ror":"https://ror.org/01m2pas06","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210105847"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshikazu Homma","raw_affiliation_strings":["NTT Basic Research Laboratories, Morinosato-Wakamiya,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Basic Research Laboratories, Morinosato-Wakamiya,","institution_ids":["https://openalex.org/I4210105847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112183495","display_name":"Kiyoshi Kanisawa","orcid":"https://orcid.org/0009-0006-4562-5313","observed_orcids":["https://orcid.org/0009-0006-4562-5313"]},"institutions":[{"id":"https://openalex.org/I4210105847","display_name":"NTT Basic Research Laboratories","ror":"https://ror.org/01m2pas06","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210105847"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kiyoshi Kanisawa","raw_affiliation_strings":["NTT Basic Research Laboratories, Morinosato-Wakamiya,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Basic Research Laboratories, Morinosato-Wakamiya,","institution_ids":["https://openalex.org/I4210105847"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045086334","display_name":"Y. Hirayama","orcid":"https://orcid.org/0000-0003-2638-9133","observed_orcids":["https://orcid.org/0000-0003-2638-9133"]},"institutions":[{"id":"https://openalex.org/I4210105847","display_name":"NTT Basic Research Laboratories","ror":"https://ror.org/01m2pas06","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210105847"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshiro Hirayama","raw_affiliation_strings":["NTT Basic Research Laboratories, Morinosato-Wakamiya,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Basic Research Laboratories, Morinosato-Wakamiya,","institution_ids":["https://openalex.org/I4210105847"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210105847"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.2131,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.44078669,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"38","issue":"2R","first_page":"635","last_page":"635"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.5332000255584717,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.5332000255584717,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.31049999594688416,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.0502999983727932,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/surface-flatness","display_name":"surface flatness","score":0.9800000190734863},{"id":"https://openalex.org/keywords/homoepitaxy","display_name":"homoepitaxy","score":0.8420000076293945},{"id":"https://openalex.org/keywords/heteroepitaxy","display_name":"heteroepitaxy","score":0.8220000267028809},{"id":"https://openalex.org/keywords/stranski-krastanov-growth","display_name":"Stranski-Krastanov growth","score":0.8569999933242798},{"id":"https://openalex.org/keywords/frank-van-der-merwe-growth","display_name":"layer-by-layer growth","score":0.8029999732971191},{"id":"https://openalex.org/keywords/electron-transport","display_name":"electron transport","score":0.6940000057220459},{"id":"https://openalex.org/keywords/hot-electron-transistors","display_name":"hot electron transistor","score":0.9359999895095825},{"id":"https://openalex.org/keywords/epitaxial-substrates","display_name":"epitaxial substrates","score":0.6460000276565552}],"concepts":[{"id":"https://openalex.org/C2778530986","wikidata":"https://www.wikidata.org/wiki/Q5457948","display_name":"Flatness (cosmology)","level":3,"score":0.8217227458953857},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.7172493934631348},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6572742462158203},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6324885487556458},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6268309354782104},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5917907357215881},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4732154905796051},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.24956920742988586},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08063510060310364},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C26405456","wikidata":"https://www.wikidata.org/wiki/Q338","display_name":"Cosmology","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.38.635","doi":"https://doi.org/10.1143/jjap.38.635","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.38.635","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":69,"referenced_works":["https://openalex.org/W131179855","https://openalex.org/W1516997303","https://openalex.org/W1590116206","https://openalex.org/W1965475755","https://openalex.org/W1966888721","https://openalex.org/W1968938970","https://openalex.org/W1972374537","https://openalex.org/W1972418272","https://openalex.org/W1972870894","https://openalex.org/W1976150003","https://openalex.org/W1978860925","https://openalex.org/W1979333303","https://openalex.org/W1979439480","https://openalex.org/W1986807686","https://openalex.org/W1987478685","https://openalex.org/W1988326007","https://openalex.org/W1989353995","https://openalex.org/W1993780489","https://openalex.org/W2001788404","https://openalex.org/W2002297634","https://openalex.org/W2003344745","https://openalex.org/W2005915145","https://openalex.org/W2009513209","https://openalex.org/W2011294171","https://openalex.org/W2012008419","https://openalex.org/W2017926618","https://openalex.org/W2018416643","https://openalex.org/W2020875304","https://openalex.org/W2021934831","https://openalex.org/W2024940920","https://openalex.org/W2026708009","https://openalex.org/W2029064852","https://openalex.org/W2029241703","https://openalex.org/W2030359049","https://openalex.org/W2032717017","https://openalex.org/W2033935530","https://openalex.org/W2035291689","https://openalex.org/W2035496563","https://openalex.org/W2037366060","https://openalex.org/W2039658158","https://openalex.org/W2040514150","https://openalex.org/W2043377976","https://openalex.org/W2049728669","https://openalex.org/W2051045101","https://openalex.org/W2051864114","https://openalex.org/W2052908036","https://openalex.org/W2053466869","https://openalex.org/W2056479184","https://openalex.org/W2057665591","https://openalex.org/W2058213972","https://openalex.org/W2058910650","https://openalex.org/W2065250885","https://openalex.org/W2066966815","https://openalex.org/W2068169744","https://openalex.org/W2068811044","https://openalex.org/W2069168534","https://openalex.org/W2079014271","https://openalex.org/W2081304008","https://openalex.org/W2081829076","https://openalex.org/W2084792046","https://openalex.org/W2086855763","https://openalex.org/W2087382938","https://openalex.org/W2088708791","https://openalex.org/W2090097744","https://openalex.org/W2090971479","https://openalex.org/W2091347569","https://openalex.org/W2092730818","https://openalex.org/W2314649911","https://openalex.org/W3189290307"],"related_works":["https://openalex.org/W4404002926","https://openalex.org/W4387675664","https://openalex.org/W2078751149","https://openalex.org/W2002585530","https://openalex.org/W2093279944","https://openalex.org/W2093249617","https://openalex.org/W2040736909","https://openalex.org/W2015949622","https://openalex.org/W2043299802","https://openalex.org/W2054114251"],"abstract_inverted_index":{"We":[0],"have":[1],"studied":[2],"the":[3,55,72,99,106,129,135],"surface":[4,37,81],"flatness":[5,82],"properties":[6,122,132],"of":[7,14,22,59,75,108,123],"(111)A":[8,36,85,136],"planes":[9],"in":[10,64,91],"both":[11,109],"homoepitaxial":[12],"growth":[13,21,57,107],"GaAs":[15,17,27,35,60,114],"on":[16,26,113],"and":[18,24,111,118],"highly-mismatched":[19,92],"heteroepitaxial":[20],"InAs":[23,110],"InSb":[25,112],"by":[28,98,133],"molecular":[29],"beam":[30],"epitaxy.":[31],"The":[32,80,94,116,138],"homo-epitaxially":[33],"grown":[34],"has":[38],"atomically":[39],"flat":[40],"terraces":[41],"as":[42,44],"wide":[43],"about":[45],"1":[46],"\u00b5m,":[47],"which":[48],"make":[49],"it":[50],"possible":[51],"to":[52],"clearly":[53,145],"image":[54],"layer-by-layer":[56],"processes":[58],"byin-situscanning":[61],"electron":[62,120],"microscopy,":[63],"contrast":[65],"with":[66],"conventionally":[67],"used":[68],"(001)":[69],"surfaces":[70],"where":[71],"high":[73],"density":[74],"steps":[76],"prevents":[77],"clear":[78],"imaging.":[79],"improvement":[83],"using":[84,134],"substrates":[86],"is":[87,102,144],"much":[88],"more":[89],"drastic":[90],"heteroepitaxy.":[93],"three-dimensional":[95],"islanding":[96],"governed":[97],"Stranski-Krastanov":[100],"mechanism":[101],"strongly":[103],"suppressed":[104],"for":[105,140],"substrates.":[115,137],"lateral":[117],"vertical":[119],"transport":[121],"Ga(Al)As/InAs/GaAs":[124],"heterostructures":[125],"are":[126],"studied,":[127],"verifying":[128],"improved":[130],"electric":[131],"application":[139],"novel":[141],"hot-electron":[142],"transistors":[143],"demonstrated.":[146]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2014,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}