{"id":"https://openalex.org/W2052056728","doi":"https://doi.org/10.1016/j.diamond.2004.10.032","title":"A new structure of C60/AlN high performance field effect transistor","display_name":"A new structure of C60/AlN high performance field effect transistor","publication_year":2004,"publication_date":"2004-12-16","ids":{"openalex":"https://openalex.org/W2052056728","doi":"https://doi.org/10.1016/j.diamond.2004.10.032","mag":"2052056728"},"language":"en","primary_location":{"id":"doi:10.1016/j.diamond.2004.10.032","doi":"https://doi.org/10.1016/j.diamond.2004.10.032","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.diamond.2004.10.032","pdf_url":null,"source":{"id":"https://openalex.org/S124577123","display_name":"Diamond and Related Materials","issn_l":"0925-9635","issn":["0925-9635","1879-0062"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Diamond and Related Materials","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083529552","display_name":"H. Nojiri","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I111966504","display_name":"University of Fukui","ror":"https://ror.org/00msqp585","country_code":"JP","type":"education","lineage":["https://openalex.org/I111966504"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Nojiri","raw_affiliation_strings":["Department of Electrical and Electronics Engineering, Fukui University, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronics Engineering, Fukui University, Japan","institution_ids":["https://openalex.org/I111966504"]}]},{"author_position":"middle","author":{"id":null,"display_name":"D. Yokoyama","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I111966504","display_name":"University of Fukui","ror":"https://ror.org/00msqp585","country_code":"JP","type":"education","lineage":["https://openalex.org/I111966504"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"D. Yokoyama","raw_affiliation_strings":["Department of Electrical and Electronics Engineering, Fukui University, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronics Engineering, Fukui University, Japan","institution_ids":["https://openalex.org/I111966504"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088549337","display_name":"Akio Yamamoto","orcid":"https://orcid.org/0000-0002-7409-3938","observed_orcids":["https://orcid.org/0000-0002-7409-3938"]},"institutions":[{"id":"https://openalex.org/I111966504","display_name":"University of Fukui","ror":"https://ror.org/00msqp585","country_code":"JP","type":"education","lineage":["https://openalex.org/I111966504"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Yamamoto","raw_affiliation_strings":["Department of Electrical and Electronics Engineering, Fukui University, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronics Engineering, Fukui University, Japan","institution_ids":["https://openalex.org/I111966504"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5070799203","display_name":"Akira Hashimoto","orcid":"https://orcid.org/0000-0001-7834-3933","observed_orcids":["https://orcid.org/0000-0001-7834-3933"]},"institutions":[{"id":"https://openalex.org/I111966504","display_name":"University of Fukui","ror":"https://ror.org/00msqp585","country_code":"JP","type":"education","lineage":["https://openalex.org/I111966504"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Hashimoto","raw_affiliation_strings":["Department of Electrical and Electronics Engineering, Fukui University, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronics Engineering, Fukui University, Japan","institution_ids":["https://openalex.org/I111966504"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I111966504"],"apc_list":{"value":2690,"currency":"USD","value_usd":2690},"apc_paid":null,"fwci":0.2025,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.4790631,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"14","issue":"3-7","first_page":"518","last_page":"521"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10956","display_name":"Fullerene Chemistry and Applications","score":0.8496000170707703,"subfield":{"id":"https://openalex.org/subfields/1605","display_name":"Organic Chemistry"},"field":{"id":"https://openalex.org/fields/16","display_name":"Chemistry"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10956","display_name":"Fullerene Chemistry and Applications","score":0.8496000170707703,"subfield":{"id":"https://openalex.org/subfields/1605","display_name":"Organic Chemistry"},"field":{"id":"https://openalex.org/fields/16","display_name":"Chemistry"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.03359999880194664,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":0.016100000590085983,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/c60","display_name":"C60","score":0.7369999885559082},{"id":"https://openalex.org/keywords/aluminum-nitride","display_name":"aluminum nitride","score":0.7829999923706055},{"id":"https://openalex.org/keywords/grain-size","display_name":"grain size","score":0.828000009059906},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"electron mobility","score":0.8339999914169312},{"id":"https://openalex.org/keywords/hopping-conduction","display_name":"hopping conduction","score":0.7730000019073486},{"id":"https://openalex.org/keywords/activation-energy","display_name":"activation energy","score":0.871999979019165},{"id":"https://openalex.org/keywords/drain-current-characteristics","display_name":"drain current characteristics","score":0.6850000023841858},{"id":"https://openalex.org/keywords/organic-semiconductors","display_name":"organic semiconductors","score":0.671999990940094}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5408556461334229},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5337038636207581},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5206215381622314},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44703662395477295},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3536984920501709},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.34829825162887573},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2151152491569519},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.13733717799186707},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12300911545753479},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.diamond.2004.10.032","doi":"https://doi.org/10.1016/j.diamond.2004.10.032","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.diamond.2004.10.032","pdf_url":null,"source":{"id":"https://openalex.org/S124577123","display_name":"Diamond and Related Materials","issn_l":"0925-9635","issn":["0925-9635","1879-0062"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Diamond and Related Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1976687486","https://openalex.org/W1993737448","https://openalex.org/W1999398156","https://openalex.org/W2002058197","https://openalex.org/W2007454908","https://openalex.org/W2012490339","https://openalex.org/W2040951525","https://openalex.org/W2053006767","https://openalex.org/W2087286302","https://openalex.org/W2094505911"],"related_works":["https://openalex.org/W1985769364","https://openalex.org/W2064488458","https://openalex.org/W2016404228","https://openalex.org/W2090324325","https://openalex.org/W2045631842","https://openalex.org/W2065394557","https://openalex.org/W2153656765","https://openalex.org/W2022054658","https://openalex.org/W1973834185","https://openalex.org/W1637593351"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}