{"id":"https://openalex.org/W2051925228","doi":"https://doi.org/10.1116/1.1676641","title":"Ion bombardment energy control for selective fluorocarbon plasma etching of organosilicate glass","display_name":"Ion bombardment energy control for selective fluorocarbon plasma etching of organosilicate glass","publication_year":2004,"publication_date":"2004-03-01","ids":{"openalex":"https://openalex.org/W2051925228","doi":"https://doi.org/10.1116/1.1676641","mag":"2051925228"},"language":"en","primary_location":{"id":"doi:10.1116/1.1676641","doi":"https://doi.org/10.1116/1.1676641","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.1676641","pdf_url":null,"source":{"id":"https://openalex.org/S4210169477","display_name":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","issn_l":"1071-1023","issn":["1071-1023","1520-8567"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","poland-70"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080427940","display_name":"Rardchawadee Silapunt","orcid":"https://orcid.org/0000-0002-0954-0391","observed_orcids":["https://orcid.org/0000-0002-0954-0391"]},"institutions":[{"id":"https://openalex.org/I135310074","display_name":"University of Wisconsin\u2013Madison","ror":"https://ror.org/01y2jtd41","country_code":"US","type":"education","lineage":["https://openalex.org/I135310074"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Silapunt","raw_affiliation_strings":["Department of Electrical and Computer Engineering and Center for Plasma-Aided Manufacturing, University of Wisconsin-Madison, Madison, Wisconsin\u200953706"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering and Center for Plasma-Aided Manufacturing, University of Wisconsin-Madison, Madison, Wisconsin\u200953706","institution_ids":["https://openalex.org/I135310074"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111938208","display_name":"Amy E. Wendt","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I135310074","display_name":"University of Wisconsin\u2013Madison","ror":"https://ror.org/01y2jtd41","country_code":"US","type":"education","lineage":["https://openalex.org/I135310074"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. E. Wendt","raw_affiliation_strings":["Department of Electrical and Computer Engineering and Center for Plasma-Aided Manufacturing, University of Wisconsin-Madison, Madison, Wisconsin\u200953706"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering and Center for Plasma-Aided Manufacturing, University of Wisconsin-Madison, Madison, Wisconsin\u200953706","institution_ids":["https://openalex.org/I135310074"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016587564","display_name":"Karen H. R. Kirmse","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Kirmse","raw_affiliation_strings":["Texas Instruments, Dallas, Texas\u200975243"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments, Dallas, Texas\u200975243","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026173864","display_name":"Laura Losey","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. P. Losey","raw_affiliation_strings":["Texas Instruments, Dallas, Texas\u200975243"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments, Dallas, Texas\u200975243","institution_ids":["https://openalex.org/I74760111"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.9497,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.76896154,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"22","issue":"2","first_page":"826","last_page":"831"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10642","display_name":"Atmospheric-Pressure Plasma Applications","score":0.0007999999797903001,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.000699999975040555,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ion-bombardment-energy","display_name":"ion bombardment energy","score":0.8410000205039978},{"id":"https://openalex.org/keywords/organosilicate-glass","display_name":"organosilicate glass","score":0.9559999704360962},{"id":"https://openalex.org/keywords/fluorocarbon-plasma","display_name":"fluorocarbon plasma","score":0.9100000262260437},{"id":"https://openalex.org/keywords/ion-energy-distribution","display_name":"ion energy distribution","score":0.8420000076293945},{"id":"https://openalex.org/keywords/etch-stop-layer","display_name":"etch stop layer","score":0.7630000114440918},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"silicon carbide","score":0.9890000224113464},{"id":"https://openalex.org/keywords/silicon-nitride","display_name":"silicon nitride","score":1.0},{"id":"https://openalex.org/keywords/etch-rate","display_name":"etch rate","score":0.8140000104904175}],"concepts":[{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.713108241558075},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.6776925325393677},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6481514573097229},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.6299142241477966},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.6292263269424438},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.5747108459472656},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5598292350769043},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5433034300804138},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5153231024742126},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5117051601409912},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.4854326844215393},{"id":"https://openalex.org/C118792377","wikidata":"https://www.wikidata.org/wiki/Q108584245","display_name":"Selectivity","level":3,"score":0.4286278486251831},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.4281507432460785},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4022394120693207},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.32716071605682373},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2779060900211334},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2547415494918823},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18127426505088806},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.08191481232643127},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.06492897868156433},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.05788937211036682},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.1676641","doi":"https://doi.org/10.1116/1.1676641","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.1676641","pdf_url":null,"source":{"id":"https://openalex.org/S4210169477","display_name":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","issn_l":"1071-1023","issn":["1071-1023","1520-8567"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","poland-70"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320306087","display_name":"Semiconductor Research Corporation","ror":"https://ror.org/047z4n946"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1551729879","https://openalex.org/W1675695310","https://openalex.org/W1967709316","https://openalex.org/W1993248329","https://openalex.org/W1993615297","https://openalex.org/W1997738448","https://openalex.org/W1998203114","https://openalex.org/W2008464274","https://openalex.org/W2009912433","https://openalex.org/W2010054899","https://openalex.org/W2021301610","https://openalex.org/W2035126971","https://openalex.org/W2039211454","https://openalex.org/W2039574057","https://openalex.org/W2045394869","https://openalex.org/W2052507133","https://openalex.org/W2056889600","https://openalex.org/W2080692148","https://openalex.org/W2091809080"],"related_works":["https://openalex.org/W1990699704","https://openalex.org/W1993615297","https://openalex.org/W2156860995","https://openalex.org/W3136375884","https://openalex.org/W2007201787","https://openalex.org/W7135227352","https://openalex.org/W3196986091","https://openalex.org/W2091809080","https://openalex.org/W4377107472","https://openalex.org/W2067161740"],"abstract_inverted_index":{"The":[0,44],"role":[1],"of":[2,9,16,46,54,73,106,116],"ion":[3,36,78,84],"bombardment":[4,79],"in":[5,25],"plasma":[6,28],"etch":[7,13,74],"selectivity":[8,101],"organosilicate":[10],"glass":[11],"to":[12],"stop":[14],"layers":[15],"silicon":[17,20],"carbide":[18],"and":[19,99],"nitride":[21],"has":[22],"been":[23],"investigated":[24],"a":[26,30,34,82,89,103],"C4F8/N2/Ar":[27],"using":[29],"method":[31],"that":[32],"produces":[33],"narrow":[35,48,111],"energy":[37,80,85],"distribution":[38],"(IED)":[39],"at":[40],"the":[41,47,55,61,93,96,110,117],"substrate":[42],"surface.":[43],"effects":[45],"IED":[49,58],"are":[50],"compared":[51],"with":[52,109],"those":[53],"broad,":[56],"bimodal":[57],"produced":[59],"by":[60],"conventional":[62],"sinusoidal":[63],"bias":[64,107],"voltage":[65,108],"wave":[66],"form":[67],"(at":[68],"13.56":[69],"MHz).":[70],"A":[71,113],"comparison":[72],"rate":[75],"versus":[76],"average":[77],"shows":[81],"higher":[83],"threshold":[86],"for":[87,95],"etching,":[88],"larger":[90],"gap":[91],"between":[92],"thresholds":[94],"two":[97],"materials,":[98],"high":[100],"over":[102],"wider":[104],"range":[105],"IED.":[112],"physical":[114],"explanation":[115],"observed":[118],"phenomena":[119],"is":[120],"proposed.":[121]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2026-10-01T08:54:57.152042","created_date":"2016-06-24T00:00:00"}