{"id":"https://openalex.org/W2051807342","doi":"https://doi.org/10.1063/1.2957655","title":"Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications","display_name":"Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications","publication_year":2008,"publication_date":"2008-08-04","ids":{"openalex":"https://openalex.org/W2051807342","doi":"https://doi.org/10.1063/1.2957655","mag":"2051807342"},"language":"en","primary_location":{"id":"doi:10.1063/1.2957655","doi":"https://doi.org/10.1063/1.2957655","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2957655","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113672673","display_name":"Chih-Tsung Tsai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chih-Tsung Tsai","raw_affiliation_strings":["National Tsing Hua University 1 Institute of Electronics Engineering, , Hsinchu, 300 Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Tsing Hua University 1 Institute of Electronics Engineering, , Hsinchu, 300 Taiwan","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014223462","display_name":"Ting\u2010Chang Chang","orcid":"https://orcid.org/0000-0002-5301-6693","observed_orcids":["https://orcid.org/0000-0002-5301-6693"]},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ting-Chang Chang","raw_affiliation_strings":["National Sun Yat-Sen University 2 Department of Physics and Institute of Electro-Optical Engineering, Center for Nanoscience and Nanotechnology, , 70 Lien-hai Road, Kaohsiung, 804 Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Sun Yat-Sen University 2 Department of Physics and Institute of Electro-Optical Engineering, Center for Nanoscience and Nanotechnology, , 70 Lien-hai Road, Kaohsiung, 804 Taiwan","institution_ids":["https://openalex.org/I142974352"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002327772","display_name":"Po\u2010Tsun Liu","orcid":"https://orcid.org/0000-0001-8560-3668","observed_orcids":["https://orcid.org/0000-0001-8560-3668"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Po-Tsun Liu","raw_affiliation_strings":["National Chiao Tung University 3 Department of Photonics and Display Institute, , Hsinchu, 300 Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Chiao Tung University 3 Department of Photonics and Display Institute, , Hsinchu, 300 Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100842042","display_name":"Yi-Li Cheng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yi-Li Cheng","raw_affiliation_strings":["National Chiao Tung University 3 Department of Photonics and Display Institute, , Hsinchu, 300 Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Chiao Tung University 3 Department of Photonics and Display Institute, , Hsinchu, 300 Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113551330","display_name":"Fon-Shan Huang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Fon-Shan Huang","raw_affiliation_strings":["National Tsing Hua University 1 Institute of Electronics Engineering, , Hsinchu, 300 Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Tsing Hua University 1 Institute of Electronics Engineering, , Hsinchu, 300 Taiwan","institution_ids":["https://openalex.org/I25846049"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.4967,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.82883795,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"93","issue":"5","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-oxide-thin-films","display_name":"silicon oxide thin films","score":0.9070000052452087},{"id":"https://openalex.org/keywords/electron-gun-evaporation","display_name":"electron gun evaporation","score":0.9160000085830688},{"id":"https://openalex.org/keywords/leakage-current-reduction","display_name":"leakage current reduction","score":0.7940000295639038},{"id":"https://openalex.org/keywords/resistive-switching","display_name":"resistive switching","score":0.8740000128746033},{"id":"https://openalex.org/keywords/resistance-memory","display_name":"resistance memory","score":0.7459999918937683},{"id":"https://openalex.org/keywords/retention-time","display_name":"retention time","score":0.8349999785423279},{"id":"https://openalex.org/keywords/low-temperature-deposition","display_name":"low-temperature deposition","score":0.8159999847412109}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7116348743438721},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6840665936470032},{"id":"https://openalex.org/C179156687","wikidata":"https://www.wikidata.org/wiki/Q1128174","display_name":"Electron gun","level":4,"score":0.5776835680007935},{"id":"https://openalex.org/C61441594","wikidata":"https://www.wikidata.org/wiki/Q132814","display_name":"Evaporation","level":2,"score":0.5516626238822937},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5514498949050903},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.5507227182388306},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.49400025606155396},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4746801555156708},{"id":"https://openalex.org/C2779105228","wikidata":"https://www.wikidata.org/wiki/Q2286029","display_name":"Silicon oxide","level":4,"score":0.45276182889938354},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.451631635427475},{"id":"https://openalex.org/C118419359","wikidata":"https://www.wikidata.org/wiki/Q682585","display_name":"Supercritical fluid","level":2,"score":0.42413291335105896},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.42367038130760193},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.4233264923095703},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3609546422958374},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2496831715106964},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19983038306236267},{"id":"https://openalex.org/C95312477","wikidata":"https://www.wikidata.org/wiki/Q207340","display_name":"Cathode ray","level":3,"score":0.1161109209060669},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.09378913044929504},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.08650875091552734},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0770891010761261},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.2957655","doi":"https://doi.org/10.1063/1.2957655","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2957655","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1969989204","https://openalex.org/W1980584607","https://openalex.org/W1983645589","https://openalex.org/W2007070351","https://openalex.org/W2022725475","https://openalex.org/W2034315143","https://openalex.org/W2062102653","https://openalex.org/W2070121981","https://openalex.org/W2072046978","https://openalex.org/W2074429207","https://openalex.org/W2075974147","https://openalex.org/W2089451866","https://openalex.org/W2097951511","https://openalex.org/W2100575060","https://openalex.org/W2129276788"],"related_works":["https://openalex.org/W2003299341","https://openalex.org/W2081368007","https://openalex.org/W2087026742","https://openalex.org/W1967445209","https://openalex.org/W3213274596","https://openalex.org/W2791736673","https://openalex.org/W2091412292","https://openalex.org/W1967557635","https://openalex.org/W2741853445","https://openalex.org/W2546842585"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"the":[3,14,28,31,61,72,79],"supercritical":[4],"CO2":[5],"fluid":[6],"mixed":[7],"with":[8],"cosolvents":[9],"is":[10,45,56,68],"introduced":[11],"to":[12,65,78],"terminate":[13],"traps":[15],"in":[16,54],"electron-gun":[17],"(e-gun)":[18],"evaporation":[19],"deposited":[20],"silicon":[21],"oxide":[22],"(SiOx)":[23],"film":[24,33],"at":[25],"150\u00b0C.":[26],"After":[27],"proposed":[29],"treatment,":[30],"SiOx":[32],"exhibits":[34],"a":[35,40],"lower":[36],"leakage":[37],"current":[38],"and":[39,60],"resistive":[41,73],"switching":[42,74],"behavior":[43,75],"that":[44,71],"controllable":[46],"by":[47],"applying":[48],"proper":[49],"voltage":[50],"bias.":[51],"The":[52],"change":[53],"resistance":[55],"over":[57],"102":[58],"times":[59],"retention":[62],"time":[63],"attains":[64],"2\u00d7103s.":[66],"It":[67],"also":[69],"discovered":[70],"seemingly":[76],"relates":[77],"amount":[80],"of":[81],"traps.":[82]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":2}],"updated_date":"2026-09-26T08:19:03.415552","created_date":"2016-06-24T00:00:00"}