{"id":"https://openalex.org/W2050811564","doi":"https://doi.org/10.1117/12.736328","title":"Investigation on immersion defectivity root cause","display_name":"Investigation on immersion defectivity root cause","publication_year":2007,"publication_date":"2007-02-08","ids":{"openalex":"https://openalex.org/W2050811564","doi":"https://doi.org/10.1117/12.736328","mag":"2050811564"},"language":"en","primary_location":{"id":"doi:10.1117/12.736328","doi":"https://doi.org/10.1117/12.736328","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.736328","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033531330","display_name":"Vincent Farys","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"V. Farys","raw_affiliation_strings":["STMicroelectronics (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics (France)","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008490815","display_name":"St\u00e9phanie Gaugiran","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Gaugiran","raw_affiliation_strings":["CEA-Leti-Minatec (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA-Leti-Minatec (France)","institution_ids":["https://openalex.org/I2738703131","https://openalex.org/I4210150049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052069839","display_name":"David Cruau","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"D. Cruau","raw_affiliation_strings":["Freescale Semiconductor, Inc. (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Freescale Semiconductor, Inc. (France)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000912655","display_name":"Karim Mestadi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"K. Mestadi","raw_affiliation_strings":["STMicroelectronics (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics (France)","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059956962","display_name":"Scott P. Warrick","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Warrick","raw_affiliation_strings":["Freescale Semiconductor, Inc. (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Freescale Semiconductor, Inc. (France)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069362962","display_name":"Michael Benndorf","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4400008896","display_name":"NXP (France)","ror":"https://ror.org/02vas3094","country_code":"FR","type":"company","lineage":["https://openalex.org/I109147379","https://openalex.org/I4400008896"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Benndorf","raw_affiliation_strings":["NXP Semiconductors (France)","NXP Semiconductors, France#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NXP Semiconductors (France)","institution_ids":["https://openalex.org/I4400008896"]},{"raw_affiliation_string":"NXP Semiconductors, France#TAB#","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065411415","display_name":"R. Feilleux","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"R. Feilleux","raw_affiliation_strings":["CEA-Leti-Minatec (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA-Leti-Minatec (France)","institution_ids":["https://openalex.org/I2738703131","https://openalex.org/I4210150049"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5049800882","display_name":"Claire Sourd","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Sourd","raw_affiliation_strings":["CEA-Leti-Minatec (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA-Leti-Minatec (France)","institution_ids":["https://openalex.org/I2738703131","https://openalex.org/I4210150049"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.14354058,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"6533","issue":null,"first_page":"653308","last_page":"653308"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11517","display_name":"Advanced optical system design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12111","display_name":"Industrial Vision Systems and Defect Detection","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2209","display_name":"Industrial and Manufacturing Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/immersion-lithography","display_name":"immersion lithography","score":0.9990000128746033},{"id":"https://openalex.org/keywords/defectivity","display_name":"defectivity","score":0.6980000138282776},{"id":"https://openalex.org/keywords/watermarks","display_name":"watermarks","score":0.9010000228881836},{"id":"https://openalex.org/keywords/bubbles","display_name":"bubbles","score":0.9010000228881836},{"id":"https://openalex.org/keywords/track-parameters","display_name":"track parameters","score":0.6290000081062317},{"id":"https://openalex.org/keywords/photoresist","display_name":"photoresist","score":0.6230000257492065},{"id":"https://openalex.org/keywords/topcoat","display_name":"top coat","score":0.9919999837875366},{"id":"https://openalex.org/keywords/leaching","display_name":"leaching","score":0.8999999761581421},{"id":"https://openalex.org/keywords/receding-contact-angle","display_name":"receding contact angle","score":0.9409999847412109},{"id":"https://openalex.org/keywords/water-uptake","display_name":"water absorption","score":0.9980000257492065}],"concepts":[{"id":"https://openalex.org/C94263209","wikidata":"https://www.wikidata.org/wiki/Q1076175","display_name":"Immersion lithography","level":4,"score":0.9587653875350952},{"id":"https://openalex.org/C199068039","wikidata":"https://www.wikidata.org/wiki/Q574523","display_name":"Immersion (mathematics)","level":2,"score":0.8166553974151611},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.8004621267318726},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.797447919845581},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7330482006072998},{"id":"https://openalex.org/C2779751349","wikidata":"https://www.wikidata.org/wiki/Q1474480","display_name":"Scanner","level":2,"score":0.6100456118583679},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.4921037554740906},{"id":"https://openalex.org/C162996421","wikidata":"https://www.wikidata.org/wiki/Q371965","display_name":"Extreme ultraviolet lithography","level":2,"score":0.41859710216522217},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3674473762512207},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3155891001224518},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3026701807975769},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.07709690928459167},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.736328","doi":"https://doi.org/10.1117/12.736328","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.736328","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1973705549","https://openalex.org/W2025922830","https://openalex.org/W2014745463","https://openalex.org/W2485748677","https://openalex.org/W2014199844","https://openalex.org/W2044633110","https://openalex.org/W2076945027","https://openalex.org/W2002838450","https://openalex.org/W2064822349","https://openalex.org/W2094073588"],"abstract_inverted_index":{"The":[0,85],"introduction":[1],"of":[2,15,64,79,87,104,136],"immersion":[3,47,83,138],"lithography":[4,35,51],"in":[5,69,115],"the":[6,31,77,88,134],"production":[7],"phase":[8],"has":[9,93],"been":[10,94,113],"accompanied":[11],"with":[12,119],"high":[13],"level":[14],"defects":[16,55,80],"compared":[17],"to":[18,29,33,42,117],"standard":[19],"process":[20,25,52],"on":[21,46,72,76,133],"dry":[22,34],"lithography.":[23],"Continuous":[24],"optimization":[26],"allowed":[27],"us":[28],"reduce":[30],"defectivity":[32,48],"level.":[36],"This":[37],"learning":[38],"cycle":[39],"also":[40],"permitted":[41],"improve":[43],"our":[44,73],"knowledge":[45],"formation.":[49,121],"Immersion":[50],"cause":[53],"specific":[54,137],"type":[56],"as":[57,96,98],"watermarks,":[58],"bubbles,":[59],"extra":[60],"pattern":[61],"and":[62,90,109,127],"swelling":[63],"lines.":[65],"We":[66],"will":[67],"report":[68],"this":[70],"article":[71],"latest":[74],"experiment":[75],"understanding":[78],"formation":[81,135],"during":[82],"process.":[84],"influence":[86],"track":[89,126],"scanner":[91,128],"parameters":[92,129],"investigated":[95],"well":[97],"materials":[99],"issue":[100],"(resist,":[101],"topcoat).":[102],"Measurements":[103],"leaching,":[105],"receding":[106],"contact":[107],"angle":[108],"water":[110],"uptake":[111],"have":[112],"performed":[114],"order":[116],"correlate":[118],"defect":[120],"It":[122],"appears":[123],"that":[124],"material,":[125],"play":[130],"different":[131],"role":[132],"defects.":[139]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}