{"id":"https://openalex.org/W2050178294","doi":"https://doi.org/10.1063/1.112205","title":"Observations on the limits to p-type doping in ZnSe","display_name":"Observations on the limits to p-type doping in ZnSe","publication_year":1994,"publication_date":"1994-08-22","ids":{"openalex":"https://openalex.org/W2050178294","doi":"https://doi.org/10.1063/1.112205","mag":"2050178294"},"language":"en","primary_location":{"id":"doi:10.1063/1.112205","doi":"https://doi.org/10.1063/1.112205","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.112205","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5018623391","display_name":"Yongping Fan","orcid":"https://orcid.org/0000-0001-5914-2765","observed_orcids":["https://orcid.org/0000-0001-5914-2765"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Y. Fan","raw_affiliation_strings":["School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907-1285"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907-1285","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019742720","display_name":"Jung Woo Han","orcid":"https://orcid.org/0000-0003-3077-3875","observed_orcids":["https://orcid.org/0000-0003-3077-3875","https://orcid.org/0000-0001-8936-1205"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Han","raw_affiliation_strings":["School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907-1285"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907-1285","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":null,"display_name":"L. He","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. He","raw_affiliation_strings":["School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907-1285"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907-1285","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110068302","display_name":"Robert L. Gunshor","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. L. Gunshor","raw_affiliation_strings":["School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907-1285"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907-1285","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101924346","display_name":"Martin S. Brandt","orcid":"https://orcid.org/0000-0002-6741-1889","observed_orcids":["https://orcid.org/0000-0002-6741-1889"]},"institutions":[{"id":"https://openalex.org/I173498003","display_name":"Palo Alto Research Center","ror":"https://ror.org/0529fxt39","country_code":"US","type":"facility","lineage":["https://openalex.org/I173498003","https://openalex.org/I4210132870"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. S. Brandt","raw_affiliation_strings":["Xerox PARC, Palo Alto, California 94304"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xerox PARC, Palo Alto, California 94304","institution_ids":["https://openalex.org/I173498003"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109054437","display_name":"J. Walker","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I173498003","display_name":"Palo Alto Research Center","ror":"https://ror.org/0529fxt39","country_code":"US","type":"facility","lineage":["https://openalex.org/I173498003","https://openalex.org/I4210132870"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Walker","raw_affiliation_strings":["Xerox PARC, Palo Alto, California 94304"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xerox PARC, Palo Alto, California 94304","institution_ids":["https://openalex.org/I173498003"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052456823","display_name":"Noble M. Johnson","orcid":"https://orcid.org/0009-0001-5788-6266","observed_orcids":["https://orcid.org/0009-0001-5788-6266"]},"institutions":[{"id":"https://openalex.org/I173498003","display_name":"Palo Alto Research Center","ror":"https://ror.org/0529fxt39","country_code":"US","type":"facility","lineage":["https://openalex.org/I173498003","https://openalex.org/I4210132870"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"N. M. Johnson","raw_affiliation_strings":["Xerox PARC, Palo Alto, California 94304"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xerox PARC, Palo Alto, California 94304","institution_ids":["https://openalex.org/I173498003"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007806906","display_name":"Arto V Nurmikko","orcid":"https://orcid.org/0000-0001-9668-2066","observed_orcids":["https://orcid.org/0000-0001-9668-2066"]},"institutions":[{"id":"https://openalex.org/I27804330","display_name":"Brown University","ror":"https://ror.org/05gq02987","country_code":"US","type":"education","lineage":["https://openalex.org/I27804330"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. V. Nurmikko","raw_affiliation_strings":["Division of Engineering, Brown University, Providence, Rhode Island 02912"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Engineering, Brown University, Providence, Rhode Island 02912","institution_ids":["https://openalex.org/I27804330"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":5.3208,"has_fulltext":false,"cited_by_count":27,"citation_normalized_percentile":{"value":0.97096157,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"65","issue":"8","first_page":"1001","last_page":"1003"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5889000296592712,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5889000296592712,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.32739999890327454,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.04470000043511391,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/p-type-doping","display_name":"p-type doping","score":0.8650000095367432},{"id":"https://openalex.org/keywords/znse","display_name":"ZnSe","score":0.906000018119812},{"id":"https://openalex.org/keywords/znte","display_name":"ZnTe","score":1.0},{"id":"https://openalex.org/keywords/nitrogen-acceptors","display_name":"nitrogen acceptors","score":0.9440000057220459},{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"molecular beam epitaxy","score":0.8529999852180481},{"id":"https://openalex.org/keywords/hall-effect","display_name":"Hall effect","score":0.6520000100135803},{"id":"https://openalex.org/keywords/acceptor-concentration","display_name":"acceptor concentration","score":0.6420000195503235}],"concepts":[{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.7800025939941406},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.7050580978393555},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6929854154586792},{"id":"https://openalex.org/C2779892579","wikidata":"https://www.wikidata.org/wiki/Q912138","display_name":"Acceptor","level":2,"score":0.645699143409729},{"id":"https://openalex.org/C134112204","wikidata":"https://www.wikidata.org/wiki/Q10656","display_name":"Hall effect","level":3,"score":0.6399151682853699},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.6168918609619141},{"id":"https://openalex.org/C2909539053","wikidata":"https://www.wikidata.org/wiki/Q556046","display_name":"Secondary Ion Mass Spectroscopy","level":3,"score":0.6102404594421387},{"id":"https://openalex.org/C155574463","wikidata":"https://www.wikidata.org/wiki/Q170731","display_name":"Solubility","level":2,"score":0.515516996383667},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.4828248918056488},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.47361111640930176},{"id":"https://openalex.org/C77671233","wikidata":"https://www.wikidata.org/wiki/Q556046","display_name":"Secondary ion mass spectrometry","level":3,"score":0.4701046347618103},{"id":"https://openalex.org/C179104552","wikidata":"https://www.wikidata.org/wiki/Q11165","display_name":"Inorganic chemistry","level":1,"score":0.39945197105407715},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.390976220369339},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.3864821195602417},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3788418769836426},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.2153913676738739},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.17522841691970825},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.14348217844963074},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.12380120158195496},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.059937745332717896},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.112205","doi":"https://doi.org/10.1063/1.112205","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.112205","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1966437035","https://openalex.org/W1971470127","https://openalex.org/W1976812845","https://openalex.org/W1979353588","https://openalex.org/W1983258055","https://openalex.org/W1985369659","https://openalex.org/W1991662879","https://openalex.org/W1992040652","https://openalex.org/W2007541552","https://openalex.org/W2010412348","https://openalex.org/W2012828785","https://openalex.org/W2013505905","https://openalex.org/W2021036032","https://openalex.org/W2034913634","https://openalex.org/W2036609339","https://openalex.org/W2056642255","https://openalex.org/W2058431396","https://openalex.org/W2065582295","https://openalex.org/W2087791767","https://openalex.org/W2092997842"],"related_works":["https://openalex.org/W2000003098","https://openalex.org/W1971470127","https://openalex.org/W2043237503","https://openalex.org/W1995935951","https://openalex.org/W2047933332","https://openalex.org/W2092997842","https://openalex.org/W2044698126","https://openalex.org/W2080783198","https://openalex.org/W2094608630","https://openalex.org/W2023116902"],"abstract_inverted_index":{"In":[0],"this":[1,49],"letter":[2],"secondary":[3],"ion":[4],"mass":[5],"spectroscopy":[6],"measurements":[7],"of":[8,75],"nitrogen":[9,19,52],"concentrations":[10],"in":[11,48,59,65,69],"p-type":[12],"ZnSe":[13,70],"and":[14],"ZnTe,":[15],"doped":[16],"using":[17],"a":[18],"plasma":[20],"source":[21],"with":[22,28],"molecular":[23],"beam":[24],"epitaxy,":[25],"are":[26],"correlated":[27],"transport":[29],"data":[30],"from":[31],"the":[32,44,51,56,62,78],"temperature-dependent":[33],"Hall":[34],"effect":[35],"measurements.":[36],"The":[37],"results":[38],"suggest":[39],"that,":[40],"at":[41],"least":[42],"for":[43],"growth":[45,80],"conditions":[46],"employed":[47],"study,":[50],"acceptor":[53,63],"solubility":[54],"is":[55],"controlling":[57],"factor":[58],"determining":[60],"that":[61,68],"concentration":[64],"ZnTe":[66],"exceeds":[67],"by":[71],"about":[72],"one":[73],"order":[74],"magnitude":[76],"despite":[77],"similar":[79],"conditions.":[81]},"counts_by_year":[{"year":2022,"cited_by_count":1}],"updated_date":"2026-11-06T12:05:46.655746","created_date":"2016-06-24T00:00:00"}