{"id":"https://openalex.org/W2048911986","doi":"https://doi.org/10.1109/tmag.1983.1062292","title":"All refractory Josephson tunnel junctions fabricated by reactive ion etching","display_name":"All refractory Josephson tunnel junctions fabricated by reactive ion etching","publication_year":1983,"publication_date":"1983-05-01","ids":{"openalex":"https://openalex.org/W2048911986","doi":"https://doi.org/10.1109/tmag.1983.1062292","mag":"2048911986"},"language":"en","primary_location":{"id":"doi:10.1109/tmag.1983.1062292","doi":"https://doi.org/10.1109/tmag.1983.1062292","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tmag.1983.1062292","pdf_url":null,"source":{"id":"https://openalex.org/S50523690","display_name":"IEEE Transactions on Magnetics","issn_l":"0018-9464","issn":["0018-9464","1941-0069"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320755","host_organization_name":"IEEE Magnetics Society","host_organization_lineage":["https://openalex.org/P4310320755","https://openalex.org/P4310319808"],"host_organization_lineage_names":["IEEE Magnetics Society","Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Magnetics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110262600","display_name":"Alexandre Shoji","orcid":"https://orcid.org/0000-0001-7854-4946","observed_orcids":["https://orcid.org/0000-0001-7854-4946"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. Shoji","raw_affiliation_strings":["Electro Technical Laboratory, Niihari, Ibaraki, Japan","Electrotechnical Laboratory, Umezono, Sakura-mura, Niihari-gun, Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electro Technical Laboratory, Niihari, Ibaraki, Japan","institution_ids":[]},{"raw_affiliation_string":"Electrotechnical Laboratory, Umezono, Sakura-mura, Niihari-gun, Ibaraki, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108366218","display_name":"S. Kosaka","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Kosaka","raw_affiliation_strings":["Electro Technical Laboratory, Niihari, Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electro Technical Laboratory, Niihari, Ibaraki, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019430003","display_name":"Fujitoshi Shinoki","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"F. Shinoki","raw_affiliation_strings":["Electro Technical Laboratory, Niihari, Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electro Technical Laboratory, Niihari, Ibaraki, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061495708","display_name":"Masahiro Aoyagi","orcid":"https://orcid.org/0000-0002-8145-5909","observed_orcids":["https://orcid.org/0000-0002-8145-5909"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Aoyagi","raw_affiliation_strings":["Electro Technical Laboratory, Niihari, Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electro Technical Laboratory, Niihari, Ibaraki, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5079491848","display_name":"Hisao Hayakawa","orcid":"https://orcid.org/0000-0003-3462-5562","observed_orcids":["https://orcid.org/0000-0003-3462-5562"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"H. Hayakawa","raw_affiliation_strings":["Electro Technical Laboratory, Niihari, Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electro Technical Laboratory, Niihari, Ibaraki, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":14.9014,"has_fulltext":false,"cited_by_count":60,"citation_normalized_percentile":{"value":0.99489214,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":87,"max":93},"biblio":{"volume":"19","issue":"3","first_page":"827","last_page":"830"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11803","display_name":"Superconducting and THz Device Technology","score":0.975600004196167,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11803","display_name":"Superconducting and THz Device Technology","score":0.975600004196167,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10020","display_name":"Quantum Information and Cryptography","score":0.0066999997943639755,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11808","display_name":"Superconducting Materials and Applications","score":0.004399999976158142,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/josephson-tunnel-junctions","display_name":"Josephson tunnel junctions","score":0.8970000147819519},{"id":"https://openalex.org/keywords/refractory-metals","display_name":"refractory metals","score":0.7960000038146973},{"id":"https://openalex.org/keywords/reactive-ion-etching","display_name":"reactive ion etching","score":0.9950000047683716},{"id":"https://openalex.org/keywords/critical-current-density","display_name":"critical current density","score":0.7749999761581421},{"id":"https://openalex.org/keywords/silicon-wafer-fabrication","display_name":"silicon wafer fabrication","score":0.640999972820282},{"id":"https://openalex.org/keywords/electrode-patterning","display_name":"electrode patterning","score":0.550000011920929}],"concepts":[{"id":"https://openalex.org/C12038964","wikidata":"https://www.wikidata.org/wiki/Q764228","display_name":"Josephson effect","level":3,"score":0.7374866008758545},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7052208781242371},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.6497205495834351},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5915501713752747},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.5453332662582397},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.5175915956497192},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5056836605072021},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.5016806125640869},{"id":"https://openalex.org/C39197057","wikidata":"https://www.wikidata.org/wiki/Q2265632","display_name":"Magnetic flux quantum","level":4,"score":0.4385003447532654},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4103431701660156},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.37410402297973633},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3152620792388916},{"id":"https://openalex.org/C54101563","wikidata":"https://www.wikidata.org/wiki/Q124131","display_name":"Superconductivity","level":2,"score":0.21738052368164062},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.19829058647155762},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12741908431053162},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.11213865876197815},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tmag.1983.1062292","doi":"https://doi.org/10.1109/tmag.1983.1062292","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tmag.1983.1062292","pdf_url":null,"source":{"id":"https://openalex.org/S50523690","display_name":"IEEE Transactions on Magnetics","issn_l":"0018-9464","issn":["0018-9464","1941-0069"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320755","host_organization_name":"IEEE Magnetics Society","host_organization_lineage":["https://openalex.org/P4310320755","https://openalex.org/P4310319808"],"host_organization_lineage_names":["IEEE Magnetics Society","Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Magnetics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1482154100","https://openalex.org/W1982822590","https://openalex.org/W1990385034","https://openalex.org/W1995608273","https://openalex.org/W2029944437","https://openalex.org/W2044073473","https://openalex.org/W2050023653","https://openalex.org/W2094463929","https://openalex.org/W2142438052"],"related_works":["https://openalex.org/W1974144261","https://openalex.org/W2090544587","https://openalex.org/W2399769425","https://openalex.org/W1985758843","https://openalex.org/W1986375328","https://openalex.org/W1981809770","https://openalex.org/W1991937051","https://openalex.org/W275285530","https://openalex.org/W2007417710","https://openalex.org/W1546041361"],"abstract_inverted_index":{"We":[0],"have":[1,29,69,103],"developed":[2],"a":[3,33,38,100,107,113],"novel":[4],"process":[5],"for":[6,59],"fabricating":[7],"all":[8],"refractory":[9,93],"Josephson":[10],"tunnel":[11,27],"junctions":[12,28,68],"whose":[13],"base":[14],"and":[15,50,62,77,118],"counter":[16],"electrodes":[17,61],"are":[18],"composed":[19],"of":[20,133],"(Nb-NbN)":[21],"double-layered":[22],"films.":[23],"In":[24],"this":[25,116],"process,":[26,117],"been":[30,43,57,104,127],"isolated":[31],"using":[32,115],"reactive":[34,53],"ion":[35,54],"etching":[36,55],"from":[37,87],"junction":[39],"sandwich":[40],"which":[41],"had":[42],"formed":[44],"on":[45,112],"an":[46,119],"entire":[47],"silicon":[48],"wafer,":[49],"also":[51],"the":[52,123,137],"has":[56,126],"used":[58],"patterning":[60],"insulation":[63],"layers":[64],"in":[65,99,122,136],"devices.":[66],"Fabricated":[67],"yielded":[70],"good":[71],"tunneling":[72],"characteristics":[73],"with":[74,106],"excellent":[75],"uniformity":[76],"reproducibility.":[78],"The":[79,130],"maximum":[80,131],"critical":[81,134],"current":[82],"density":[83],"was":[84,140],"widely":[85],"changed":[86],"300":[88],"A/cm2to":[89],"8":[90],"kA/cm2.":[91],"All":[92],"single":[94],"flux":[95],"quantum(SFQ)":[96],"memory":[97,124,138],"cells":[98],"32\u00d732":[101],"arrangement":[102],"integrated":[105],"2.5":[108],"\u03bcm":[109],"minimum":[110],"linewidth":[111],"chip":[114],"SFQ":[120],"cell":[121],"array":[125,139],"successfully":[128],"operated.":[129],"deviation":[132],"currents":[135],"measured":[141],"to":[142],"be":[143],"\u00b16.5%.":[144]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-11-05T12:25:35.769452","created_date":"2016-06-24T00:00:00"}