{"id":"https://openalex.org/W2047838596","doi":"https://doi.org/10.1109/e3s.2013.6705882","title":"Steep subthreshold slope nanowire nanoelectromechanical field-effect transistors (NW-NEMFETs)","display_name":"Steep subthreshold slope nanowire nanoelectromechanical field-effect transistors (NW-NEMFETs)","publication_year":2013,"publication_date":"2013-10-01","ids":{"openalex":"https://openalex.org/W2047838596","doi":"https://doi.org/10.1109/e3s.2013.6705882","mag":"2047838596"},"language":"en","primary_location":{"id":"doi:10.1109/e3s.2013.6705882","doi":"https://doi.org/10.1109/e3s.2013.6705882","is_oa":false,"landing_page_url":"https://doi.org/10.1109/e3s.2013.6705882","pdf_url":null,"source":{"id":"https://openalex.org/S7407104957","display_name":"Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100444985","display_name":"Jihun Kim","orcid":"https://orcid.org/0000-0001-7584-4943","observed_orcids":["https://orcid.org/0000-0001-7584-4943","https://orcid.org/0000-0001-9876-6642","https://orcid.org/0009-0006-5603-5992"]},"institutions":[{"id":"https://openalex.org/I36258959","display_name":"University of California San Diego","ror":"https://ror.org/0168r3w48","country_code":"US","type":"education","lineage":["https://openalex.org/I36258959"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ji-Hun Kim","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of California San, La Jolla, CA","[Dept of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of California San, La Jolla, CA","institution_ids":[]},{"raw_affiliation_string":"[Dept of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA]","institution_ids":["https://openalex.org/I36258959"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076153400","display_name":"Zack C. Y. Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I36258959","display_name":"University of California San Diego","ror":"https://ror.org/0168r3w48","country_code":"US","type":"education","lineage":["https://openalex.org/I36258959"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zack C. Y. Chen","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of California San, La Jolla, CA","[Dept of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of California San, La Jolla, CA","institution_ids":[]},{"raw_affiliation_string":"[Dept of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA]","institution_ids":["https://openalex.org/I36258959"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028046696","display_name":"Soonshin Kwon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2803209242","display_name":"University of California System","ror":"https://ror.org/00pjdza24","country_code":"US","type":"education","lineage":["https://openalex.org/I2803209242"]},{"id":"https://openalex.org/I36258959","display_name":"University of California San Diego","ror":"https://ror.org/0168r3w48","country_code":"US","type":"education","lineage":["https://openalex.org/I36258959"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Soonshin Kwon","raw_affiliation_strings":["Department of Materials Science Program, University of California San, La Jolla, CA","Mater. Sci. Program, Univ. of California San Diego, La Jolla, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science Program, University of California San, La Jolla, CA","institution_ids":["https://openalex.org/I2803209242"]},{"raw_affiliation_string":"Mater. Sci. Program, Univ. of California San Diego, La Jolla, CA, USA","institution_ids":["https://openalex.org/I36258959"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110167697","display_name":"Jie Xiang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2803209242","display_name":"University of California System","ror":"https://ror.org/00pjdza24","country_code":"US","type":"education","lineage":["https://openalex.org/I2803209242"]},{"id":"https://openalex.org/I36258959","display_name":"University of California San Diego","ror":"https://ror.org/0168r3w48","country_code":"US","type":"education","lineage":["https://openalex.org/I36258959"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jie Xiang","raw_affiliation_strings":["Department of Materials Science Program, University of California San, La Jolla, CA","[Dept of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science Program, University of California San, La Jolla, CA","institution_ids":["https://openalex.org/I2803209242"]},{"raw_affiliation_string":"[Dept of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA]","institution_ids":["https://openalex.org/I36258959"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.2177,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.76112052,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9272000193595886,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9272000193595886,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.06719999760389328,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.0012000000569969416,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanowire-field-effect-transistors","display_name":"nanowire field-effect transistors","score":0.8109999895095825},{"id":"https://openalex.org/keywords/nanoelectromechanical-systems","display_name":"nanoelectromechanical systems","score":0.9409999847412109},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.8920000195503235},{"id":"https://openalex.org/keywords/high-frequency-transistors","display_name":"high-frequency transistors","score":0.5889999866485596},{"id":"https://openalex.org/keywords/low-power-nanoelectronics","display_name":"low-power nanoelectronics","score":0.6880000233650208},{"id":"https://openalex.org/keywords/ballistic-transport","display_name":"ballistic transport","score":0.5019999742507935},{"id":"https://openalex.org/keywords/thermodynamic-limit","display_name":"thermodynamic limit","score":0.4580000042915344}],"concepts":[{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.6532613039016724},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.62422776222229},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5053268074989319},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.5046254396438599},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.480313241481781},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.46831685304641724},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.46470776200294495},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4619688391685486},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4345988631248474},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3905153274536133},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3224974274635315},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3093251883983612},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.21734756231307983},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09877640008926392}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/e3s.2013.6705882","doi":"https://doi.org/10.1109/e3s.2013.6705882","is_oa":false,"landing_page_url":"https://doi.org/10.1109/e3s.2013.6705882","pdf_url":null,"source":{"id":"https://openalex.org/S7407104957","display_name":"Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2103114895","https://openalex.org/W2127007102"],"related_works":["https://openalex.org/W1984137550","https://openalex.org/W2330555089","https://openalex.org/W7011671556","https://openalex.org/W221826121","https://openalex.org/W2892106835","https://openalex.org/W4386221246","https://openalex.org/W2014423774","https://openalex.org/W1912902203","https://openalex.org/W2484754075","https://openalex.org/W2890548910"],"abstract_inverted_index":{"Significant":[0],"physical":[1],"challenges":[2],"remain":[3],"for":[4],"CMOS":[5],"technology":[6],"to":[7,111,115,125,145,162],"decrease":[8],"Ioffas":[9],"transistor":[10,57],"dimension":[11],"and":[12,44,51,68,139,157,169],"power":[13,119],"supply":[14],"voltages":[15],"continue":[16],"downscaling.":[17],"However,":[18],"a":[19],"fundamental":[20],"thermodynamic":[21],"limit":[22],"in":[23,72],"the":[24,46,94,98,102,105,112,163],"subthreshold":[25],"slope":[26],"SS":[27,135],"=":[28,30],"|(\u2202Vg)/(\u2202lnId)|":[29],"ln10":[31],"\u00b7":[32],"kBT/q":[33],"at":[34,38,154],">60":[35],"mV/dec":[36],"exists":[37],"room":[39],"temperature.":[40],"We":[41,60],"have":[42,61],"designed":[43],"demonstrated":[45,63],"first":[47],"semiconductor":[48,75,91],"nanowires":[49],"(NWs)":[50],"nanoelectromechanical":[52],"system":[53],"(NEMS)":[54],"field":[55],"effect":[56],"structure":[58],"(NW-NEMFET).":[59],"previously":[62],"0.5":[64],"ps":[65],"intrinsic":[66],"delay":[67],"near":[69,140],"ballistic":[70],"operation":[71,153],"quantum":[73],"confined":[74],"heterostructure":[76],"NWFETs":[77],"with":[78,136],"diameters":[79],"less":[80],"than":[81],"15":[82],"nm.[1]":[83],"The":[84],"current":[85],"design":[86,130],"uses":[87],"high":[88,116,166],"performance":[89],"suspended":[90],"NWs":[92],"as":[93,150,152],"conduction":[95],"channel,":[96],"while":[97],"electrostatic":[99],"pull-in":[100,142],"of":[101],"NW":[103,164],"towards":[104],"gate":[106],"stack":[107],"enables":[108],"abrupt":[109],"switching":[110],"off-state":[113],"leading":[114],"frequency,":[117],"low":[118],"nanoelectronics.":[120],"Simulation":[121],"shows":[122],"that":[123],"compared":[124],"planar":[126],"suspended-gate":[127],"FET":[128],"(SGFET)":[129],"[2],":[131],"NW-NEMFET":[132],"allows":[133],"zero":[134],"1015on-off":[137],"ratio":[138,168],"1V":[141],"voltage":[143],"due":[144,161],"enhanced":[146],"3D":[147],"capacitive":[148],"coupling,":[149],"well":[151],"very-high-frequency":[155],"(VHF)":[156],"even":[158],"ultra-high-frequency":[159],"(UHF)":[160],"beams":[165],"aspect":[167],"small":[170],"dimensions.":[171]},"counts_by_year":[{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":2}],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2016-06-24T00:00:00"}