{"id":"https://openalex.org/W2047320698","doi":"https://doi.org/10.1116/1.4869162","title":"Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes","display_name":"Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes","publication_year":2014,"publication_date":"2014-03-21","ids":{"openalex":"https://openalex.org/W2047320698","doi":"https://doi.org/10.1116/1.4869162","mag":"2047320698"},"language":"en","primary_location":{"id":"doi:10.1116/1.4869162","doi":"https://doi.org/10.1116/1.4869162","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.4869162","pdf_url":null,"source":{"id":"https://openalex.org/S4210235835","display_name":"Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena","issn_l":"2166-2746","issn":["2166-2746","2166-2754"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://dspace.sunyconnect.suny.edu/bitstreams/25003190-f0ed-4a82-8828-1790c28f041a/download","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042931698","display_name":"Steven P. Consiglio","orcid":"https://orcid.org/0000-0001-8543-5879","observed_orcids":["https://orcid.org/0000-0001-8543-5879"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Steven Consiglio","raw_affiliation_strings":["TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063843304","display_name":"Kandabara Tapily","orcid":"https://orcid.org/0000-0001-8805-0704","observed_orcids":["https://orcid.org/0000-0001-8805-0704"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kandabara Tapily","raw_affiliation_strings":["TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060825080","display_name":"Robert D. Clark","orcid":"https://orcid.org/0000-0002-8090-1049","observed_orcids":["https://orcid.org/0000-0002-8090-1049"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Robert D. Clark","raw_affiliation_strings":["TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"Toshio Hasegawa","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Toshio Hasegawa","raw_affiliation_strings":["TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001551310","display_name":"Fumitaka Amano","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Fumitaka Amano","raw_affiliation_strings":["TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020029437","display_name":"Gert J. Leusink","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Gert J. Leusink","raw_affiliation_strings":["TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TEL Technology Center, America, LLC , 255 Fuller Rd., Albany, New York 12203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055791192","display_name":"Jean Jordan\u2010Sweet","orcid":"https://orcid.org/0000-0003-0291-3295","observed_orcids":["https://orcid.org/0000-0003-0291-3295"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jean Jordan-Sweet","raw_affiliation_strings":["IBM T.J. Watson Research Center , P.O. Box 218, Yorktown Heights, New York 10598"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM T.J. Watson Research Center , P.O. Box 218, Yorktown Heights, New York 10598","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084997456","display_name":"Relja Vasi\u0107","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I392282","display_name":"University at Albany, State University of New York","ror":"https://ror.org/012zs8222","country_code":"US","type":"education","lineage":["https://openalex.org/I392282"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Relja Vasi\u0107","raw_affiliation_strings":["SUNY College of Nanoscale Science and Engineering , 257 Fuller Rd., Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SUNY College of Nanoscale Science and Engineering , 257 Fuller Rd., Albany, New York 12203","institution_ids":["https://openalex.org/I392282"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014801985","display_name":"Manasa Medikonda","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I392282","display_name":"University at Albany, State University of New York","ror":"https://ror.org/012zs8222","country_code":"US","type":"education","lineage":["https://openalex.org/I392282"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Manasa Medikonda","raw_affiliation_strings":["SUNY College of Nanoscale Science and Engineering , 257 Fuller Rd., Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SUNY College of Nanoscale Science and Engineering , 257 Fuller Rd., Albany, New York 12203","institution_ids":["https://openalex.org/I392282"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5008881400","display_name":"Alain C. Diebold","orcid":"https://orcid.org/0000-0001-5034-4272","observed_orcids":["https://orcid.org/0000-0001-5034-4272"]},"institutions":[{"id":"https://openalex.org/I392282","display_name":"University at Albany, State University of New York","ror":"https://ror.org/012zs8222","country_code":"US","type":"education","lineage":["https://openalex.org/I392282"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alain C. Diebold","raw_affiliation_strings":["SUNY College of Nanoscale Science and Engineering , 257 Fuller Rd., Albany, New York 12203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SUNY College of Nanoscale Science and Engineering , 257 Fuller Rd., Albany, New York 12203","institution_ids":["https://openalex.org/I392282"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.13218316,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"32","issue":"3","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.7680000066757202},{"id":"https://openalex.org/keywords/tin-metal-gate","display_name":"TiN metal gate","score":0.6549999713897705},{"id":"https://openalex.org/keywords/silicide-formation","display_name":"silicide formation","score":0.878000020980835},{"id":"https://openalex.org/keywords/nucleation-layer","display_name":"nucleation layer","score":0.7929999828338623},{"id":"https://openalex.org/keywords/hydrogen-terminated-silicon","display_name":"hydrogen-terminated silicon","score":0.7319999933242798},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.5730000138282776}],"concepts":[{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.8615204095840454},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.822646975517273},{"id":"https://openalex.org/C46275449","wikidata":"https://www.wikidata.org/wiki/Q2458815","display_name":"Crystallinity","level":2,"score":0.8006954789161682},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.7404383420944214},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7142893075942993},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.6258023977279663},{"id":"https://openalex.org/C2775913835","wikidata":"https://www.wikidata.org/wiki/Q7113777","display_name":"Overlayer","level":2,"score":0.5896173715591431},{"id":"https://openalex.org/C61048295","wikidata":"https://www.wikidata.org/wiki/Q909022","display_name":"Nucleation","level":2,"score":0.4982144832611084},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.441845178604126},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.4418204724788666},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.42963269352912903},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.35465264320373535},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.23918133974075317},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.23272418975830078},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.20134922862052917},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.17033907771110535},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.06734040379524231},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1116/1.4869162","doi":"https://doi.org/10.1116/1.4869162","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.4869162","pdf_url":null,"source":{"id":"https://openalex.org/S4210235835","display_name":"Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena","issn_l":"2166-2746","issn":["2166-2746","2166-2754"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","raw_type":"journal-article"},{"id":"pmh:oai:dspace.sunyconnect.suny.edu:1951/69198","doi":null,"is_oa":true,"landing_page_url":"http://hdl.handle.net/1951/69198","pdf_url":"https://dspace.sunyconnect.suny.edu/bitstreams/25003190-f0ed-4a82-8828-1790c28f041a/download","source":{"id":"https://openalex.org/S4306400078","display_name":"SUNY Digital Repository Support (State University of New York System)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I63190737","host_organization_name":"University at Buffalo, State University of New York","host_organization_lineage":["https://openalex.org/I63190737"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Article"}],"best_oa_location":{"id":"pmh:oai:dspace.sunyconnect.suny.edu:1951/69198","doi":null,"is_oa":true,"landing_page_url":"http://hdl.handle.net/1951/69198","pdf_url":"https://dspace.sunyconnect.suny.edu/bitstreams/25003190-f0ed-4a82-8828-1790c28f041a/download","source":{"id":"https://openalex.org/S4306400078","display_name":"SUNY Digital Repository Support (State University of New York System)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I63190737","host_organization_name":"University at Buffalo, State University of New York","host_organization_lineage":["https://openalex.org/I63190737"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1126863173","display_name":null,"funder_award_id":"DE-AC-02-98CH10886","funder_id":"https://openalex.org/F4320332359","funder_display_name":"Office of Science"},{"id":"https://openalex.org/G1286251239","display_name":null,"funder_award_id":"DE-AC02","funder_id":"https://openalex.org/F4320337480","funder_display_name":"Basic Energy Sciences"},{"id":"https://openalex.org/G132563423","display_name":null,"funder_award_id":"AC-02-98CH10886","funder_id":"https://openalex.org/F4320338289","funder_display_name":"Brookhaven National Laboratory"},{"id":"https://openalex.org/G1572106353","display_name":null,"funder_award_id":"DE-AC02- 98CH10886","funder_id":"https://openalex.org/F4320338289","funder_display_name":"Brookhaven National Laboratory"},{"id":"https://openalex.org/G338944111","display_name":null,"funder_award_id":"DEAC-02-98CH10886","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"},{"id":"https://openalex.org/G498139845","display_name":null,"funder_award_id":"DE-AC02","funder_id":"https://openalex.org/F4320332359","funder_display_name":"Office of Science"},{"id":"https://openalex.org/G5292656900","display_name":null,"funder_award_id":"-AC02-98 CH 10886","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"},{"id":"https://openalex.org/G549834383","display_name":null,"funder_award_id":"DEAC0298CH10886","funder_id":"https://openalex.org/F4320337480","funder_display_name":"Basic Energy Sciences"},{"id":"https://openalex.org/G8507651203","display_name":null,"funder_award_id":"AC02-98CH10886","funder_id":"https://openalex.org/F4320337480","funder_display_name":"Basic Energy Sciences"},{"id":"https://openalex.org/G969889393","display_name":null,"funder_award_id":"DE-AC02-","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"}],"funders":[{"id":"https://openalex.org/F4320306084","display_name":"U.S. Department of Energy","ror":"https://ror.org/01bj3aw27"},{"id":"https://openalex.org/F4320309644","display_name":"State University of New York","ror":"https://ror.org/01q1z8k08"},{"id":"https://openalex.org/F4320332359","display_name":"Office of Science","ror":"https://ror.org/00mmn6b08"},{"id":"https://openalex.org/F4320337480","display_name":"Basic Energy Sciences","ror":"https://ror.org/05mg91w61"},{"id":"https://openalex.org/F4320338289","display_name":"Brookhaven National Laboratory","ror":"https://ror.org/02ex6cf31"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2047320698.pdf","grobid_xml":"https://content.openalex.org/works/W2047320698.grobid-xml"},"referenced_works_count":55,"referenced_works":["https://openalex.org/W179336027","https://openalex.org/W1588530646","https://openalex.org/W1625170149","https://openalex.org/W1665259121","https://openalex.org/W1966503689","https://openalex.org/W1968982848","https://openalex.org/W1980408745","https://openalex.org/W1982926404","https://openalex.org/W1984956029","https://openalex.org/W1989668680","https://openalex.org/W1995191254","https://openalex.org/W1995362002","https://openalex.org/W1995854623","https://openalex.org/W1997824251","https://openalex.org/W1998320671","https://openalex.org/W2004866053","https://openalex.org/W2012512650","https://openalex.org/W2014079303","https://openalex.org/W2016037607","https://openalex.org/W2017474020","https://openalex.org/W2017916649","https://openalex.org/W2021987144","https://openalex.org/W2024803671","https://openalex.org/W2026125736","https://openalex.org/W2030842426","https://openalex.org/W2035221057","https://openalex.org/W2042565601","https://openalex.org/W2045529556","https://openalex.org/W2048428675","https://openalex.org/W2049311515","https://openalex.org/W2051018996","https://openalex.org/W2051257792","https://openalex.org/W2051920832","https://openalex.org/W2055103492","https://openalex.org/W2056456258","https://openalex.org/W2057349322","https://openalex.org/W2065664067","https://openalex.org/W2073564428","https://openalex.org/W2076310820","https://openalex.org/W2076972388","https://openalex.org/W2084324487","https://openalex.org/W2084353965","https://openalex.org/W2086126257","https://openalex.org/W2112554416","https://openalex.org/W2144935111","https://openalex.org/W2150238296","https://openalex.org/W2162412943","https://openalex.org/W2165663140","https://openalex.org/W2321191869","https://openalex.org/W2328132075","https://openalex.org/W2334220755","https://openalex.org/W2363636831","https://openalex.org/W2464081282","https://openalex.org/W2471969505","https://openalex.org/W2951035426"],"related_works":["https://openalex.org/W2507789672","https://openalex.org/W2094669952","https://openalex.org/W2316589876","https://openalex.org/W2051920832","https://openalex.org/W4236796878","https://openalex.org/W2081284256","https://openalex.org/W2049433113","https://openalex.org/W2743817482","https://openalex.org/W7156041896","https://openalex.org/W2037587145"],"abstract_inverted_index":{"In":[0,244],"this":[1],"study,":[2],"the":[3,6,44,53,81,122,130,191,231,261,279,282,293,297,324,327,358],"authors":[4,42,207],"examined":[5],"effects":[7],"of":[8,46,80,124,129,133,138,173,216,239,264,281,288,296,309,326,329],"different":[9],"annealing":[10,74,236],"schemes":[11],"on":[12,52,92,163,178],"crystallinity":[13,94,174,306],"in":[14,34,230,273,318,351,357],"atomic":[15,204],"layer":[16,186,197,300,305],"deposition":[17,49,72],"(ALD)":[18],"grown":[19,87],"Ti-containing":[20],"metal":[21,35,210,299,320],"gates":[22],"and":[23,30,73,167,181,202,227,234,252,286],"ultrathin":[24,315],"ALD":[25,63,101,250],"HfO2":[26,93,102,134,166,176,251,265,289,316],"high-k":[27],"dielectric":[28,304],"layers,":[29],"corresponding":[31],"electrical":[32],"results":[33],"oxide":[36,321],"semiconductor":[37,322],"capacitor":[38],"(MOSCAP)":[39],"devices.":[40],"The":[41,78,206],"investigated":[43,209],"effect":[45,79],"a":[47,61,66,70,106,109,116,125,150,154,170,184,214,253,258,310,330],"postmetal":[48,311,334],"anneal":[50,336],"(PMA)":[51],"underlying":[54],"HfO2,":[55],"which":[56,68,189,220],"was":[57,95,119,140,158,187,242,266,269],"deposited":[58,162,177],"using":[59],"either":[60,85],"standard":[62],"process":[64,67],"or":[65,89,349],"utilized":[69],"cyclical":[71],"scheme":[75],"(termed":[76],"DADA).":[77],"starting":[82],"substrate":[83],"surface,":[84],"chemically":[86],"SiO2":[88],"H-terminated":[90,179],"Si,":[91],"also":[96,208],"studied.":[97],"For":[98,314],"40":[99,143,248],"cycle":[100,144,249],"(\u223c32":[103],"\u00c5)":[104],"with":[105,121,135,149,183,213,247],"TiN":[107,151,161,185,217,226,254],"overlayer,":[108],"transition":[110],"from":[111,223],"an":[112,194],"amorphous":[113],"state":[114,233,285],"to":[115,169,257,343,355],"cubic":[117,155,225,262],"phase":[118,132,263,332],"observed":[120,141,159,188],"application":[123],"PMA":[126],"treatment.":[127],"Evidence":[128],"orthorhombic":[131],"some":[136],"level":[137],"texturing":[139],"for":[142,160,175,193,198],"DADA":[145,164],"processed":[146,165],"films":[147],"annealed":[148,182],"cap.":[152],"Concomitantly":[153],"(111)":[156],"texture":[157],"subjected":[168,256],"PMA.":[171],"Suppression":[172],"Si":[180],"illustrates":[190],"need":[192],"adequate":[195],"nucleation":[196,287],"uniform":[199],"grain":[200,347],"growth":[201],"increased":[203,344],"ordering.":[205],"gate":[211,335],"stacks":[212],"bilayer":[215],"overlying":[218],"Ti":[219],"showed":[221],"reflections":[222],"both":[224],"hexagonal":[228],"TiN0.3":[229],"as-deposited":[232],"after":[235],"clear":[237],"evidence":[238],"silicidation":[240],"(TiSix)":[241],"observed.":[243],"MOSCAP":[245],"structures":[246],"overlayer":[255],"PMA,":[259],"although":[260],"stabilized,":[267],"there":[268],"no":[270],"associated":[271],"improvement":[272],"device":[274],"scaling.":[275],"This":[276],"study":[277],"highlights":[278],"importance":[280],"initial":[283],"crystalline":[284],"as":[290,292],"well":[291],"thermal":[294],"stability":[295],"capping":[298],"material":[301],"when":[302],"engineering":[303],"by":[307],"means":[308],"cap":[312],"anneal.":[313],"integrated":[317],"advanced":[319],"structures,":[323],"benefits":[325],"stabilization":[328],"higher-k":[331],"through":[333],"may":[337],"not":[338],"be":[339],"fully":[340],"realized":[341],"due":[342,354],"leakage":[345],"along":[346],"boundaries":[348],"decrease":[350],"effective":[352],"k":[353],"changes":[356],"lower-k":[359],"interfacial":[360],"layer.":[361]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}