{"id":"https://openalex.org/W2046360952","doi":"https://doi.org/10.1109/t-ed.1984.21881","title":"VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications","display_name":"VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications","publication_year":1984,"publication_date":"1984-12-01","ids":{"openalex":"https://openalex.org/W2046360952","doi":"https://doi.org/10.1109/t-ed.1984.21881","mag":"2046360952"},"language":"en","primary_location":{"id":"doi:10.1109/t-ed.1984.21881","doi":"https://doi.org/10.1109/t-ed.1984.21881","is_oa":false,"landing_page_url":"https://doi.org/10.1109/t-ed.1984.21881","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111972078","display_name":"S. Banerjee","orcid":"https://orcid.org/0009-0002-5559-4806","observed_orcids":["https://orcid.org/0009-0002-5559-4806"]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S.K. Banerjee","raw_affiliation_strings":["Texas Instruments, Incorporated, Dallas, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments, Incorporated, Dallas, TX","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070102670","display_name":"M. Elahy","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Elahy","raw_affiliation_strings":["Texas Instruments"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035837681","display_name":"Hisashi Shichijo","orcid":"https://orcid.org/0000-0002-7593-388X","observed_orcids":["https://orcid.org/0000-0002-7593-388X"]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Shichijo","raw_affiliation_strings":["Texas Instruments"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007645295","display_name":"G. Pollack","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G.P. Pollack","raw_affiliation_strings":["Texas Instruments"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109037751","display_name":"W.F. Richardson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W.F. Richardson","raw_affiliation_strings":["Texas Instruments"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084165937","display_name":"S.D.S. Malhi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S.D.S. Malhi","raw_affiliation_strings":["Texas Instruments"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112198953","display_name":"A.H. Shah","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A.H. Shah","raw_affiliation_strings":["Texas Instruments"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013210127","display_name":"Pallab K. Chatterjee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P.K. Chatterjee","raw_affiliation_strings":["Texas Instruments"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":null,"display_name":"H.W. Lam","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H.W. Lam","raw_affiliation_strings":["Texas Instruments"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080816971","display_name":"R.H. Womack","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R.H. Womack","raw_affiliation_strings":["Texas Instruments"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments","institution_ids":["https://openalex.org/I74760111"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I74760111"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":2.3011,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.87248938,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"31","issue":"12","first_page":"1983","last_page":"1983"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.7562999725341797,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.7562999725341797,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.20509999990463257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.015399999916553497,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/lpcvd-polysilicon","display_name":"LPCVD polysilicon","score":0.8849999904632568},{"id":"https://openalex.org/keywords/accumulation-mode","display_name":"accumulation mode","score":0.8169999718666077},{"id":"https://openalex.org/keywords/inversion-mode","display_name":"inversion mode","score":0.9879999756813049},{"id":"https://openalex.org/keywords/memory-devices","display_name":"memory devices","score":0.6330000162124634},{"id":"https://openalex.org/keywords/mosfet-characteristics","display_name":"MOSFET characteristics","score":0.6119999885559082}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7406734824180603},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6405991911888123},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5983566641807556},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5382869243621826},{"id":"https://openalex.org/C1893757","wikidata":"https://www.wikidata.org/wiki/Q3653001","display_name":"Inversion (geology)","level":3,"score":0.4927730858325958},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4407259523868561},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3414919972419739},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33362340927124023},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20850691199302673},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1605972945690155},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.13428187370300293},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09596413373947144},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C109007969","wikidata":"https://www.wikidata.org/wiki/Q749565","display_name":"Structural basin","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/t-ed.1984.21881","doi":"https://doi.org/10.1109/t-ed.1984.21881","is_oa":false,"landing_page_url":"https://doi.org/10.1109/t-ed.1984.21881","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2026711413","https://openalex.org/W2071467009","https://openalex.org/W2048950161","https://openalex.org/W1981703752","https://openalex.org/W2032159870","https://openalex.org/W6986584096","https://openalex.org/W2062151775","https://openalex.org/W4290377258","https://openalex.org/W1997731269","https://openalex.org/W2007303880"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}