{"id":"https://openalex.org/W2045476236","doi":"https://doi.org/10.1016/j.matlet.2015.03.043","title":"Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application","display_name":"Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application","publication_year":2015,"publication_date":"2015-03-29","ids":{"openalex":"https://openalex.org/W2045476236","doi":"https://doi.org/10.1016/j.matlet.2015.03.043","mag":"2045476236"},"language":"en","primary_location":{"id":"doi:10.1016/j.matlet.2015.03.043","doi":"https://doi.org/10.1016/j.matlet.2015.03.043","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.matlet.2015.03.043","pdf_url":null,"source":{"id":"https://openalex.org/S55626769","display_name":"Materials Letters","issn_l":"0167-577X","issn":["0167-577X","1873-4979"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5076078746","display_name":"Nidhi G. Tiwari","orcid":"https://orcid.org/0000-0002-9637-3471","observed_orcids":["https://orcid.org/0000-0002-9637-3471"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Nidhi Tiwari","raw_affiliation_strings":["Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111679826","display_name":"Han\u2010Ping D. Shieh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Han-Ping D. Shieh","raw_affiliation_strings":["Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002327772","display_name":"Po\u2010Tsun Liu","orcid":"https://orcid.org/0000-0001-8560-3668","observed_orcids":["https://orcid.org/0000-0001-8560-3668"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Po-Tsun Liu","raw_affiliation_strings":["Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5076078746"],"corresponding_institution_ids":["https://openalex.org/I148366613"],"apc_list":{"value":2870,"currency":"USD","value_usd":2870},"apc_paid":null,"fwci":1.9583,"has_fulltext":false,"cited_by_count":33,"citation_normalized_percentile":{"value":0.86082547,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":98},"biblio":{"volume":"151","issue":null,"first_page":"53","last_page":"56"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9746000170707703,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9746000170707703,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.024900000542402267,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/indium-gallium-zinc-oxide","display_name":"indium gallium zinc oxide","score":0.9750000238418579},{"id":"https://openalex.org/keywords/zinc-oxide","display_name":"zinc oxide","score":0.8050000071525574},{"id":"https://openalex.org/keywords/transparent-thin-film-transistors","display_name":"transparent thin-film transistors","score":0.8309999704360962},{"id":"https://openalex.org/keywords/rf-sputtering","display_name":"RF sputtering","score":0.753000020980835},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.7239999771118164},{"id":"https://openalex.org/keywords/wurtzite-structure","display_name":"wurtzite structure","score":0.8899999856948853},{"id":"https://openalex.org/keywords/c-axis-orientation","display_name":"c-axis orientation","score":0.8050000071525574},{"id":"https://openalex.org/keywords/optical-properties","display_name":"optical properties","score":0.6579999923706055},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":1.0},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.9110000133514404},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.9629999995231628},{"id":"https://openalex.org/keywords/defect-density","display_name":"defect density","score":0.8230000138282776}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9234318733215332},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.8353100419044495},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.7394698262214661},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6941115856170654},{"id":"https://openalex.org/C3045981","wikidata":"https://www.wikidata.org/wiki/Q8039317","display_name":"Wurtzite crystal structure","level":3,"score":0.6901888847351074},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6008783578872681},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5945730805397034},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.5864772796630859},{"id":"https://openalex.org/C535196362","wikidata":"https://www.wikidata.org/wiki/Q758","display_name":"Zinc","level":2,"score":0.5026793479919434},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.4385707974433899},{"id":"https://openalex.org/C61427134","wikidata":"https://www.wikidata.org/wiki/Q847609","display_name":"Sputter deposition","level":4,"score":0.42918357253074646},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.4226982593536377},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2865389585494995},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.22040948271751404},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.16930913925170898},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11270055174827576},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.10774388909339905},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.09444800019264221},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.matlet.2015.03.043","doi":"https://doi.org/10.1016/j.matlet.2015.03.043","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.matlet.2015.03.043","pdf_url":null,"source":{"id":"https://openalex.org/S55626769","display_name":"Materials Letters","issn_l":"0167-577X","issn":["0167-577X","1873-4979"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G3606579098","display_name":null,"funder_award_id":"NSC99-2221-E-009-066-MY3","funder_id":"https://openalex.org/F4320322795","funder_display_name":"Ministry of Science and Technology, Taiwan"}],"funders":[{"id":"https://openalex.org/F4320322795","display_name":"Ministry of Science and Technology, Taiwan","ror":"https://ror.org/02kv4zf79"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1509631057","https://openalex.org/W1968633197","https://openalex.org/W1985723860","https://openalex.org/W1990343939","https://openalex.org/W2003584563","https://openalex.org/W2014801038","https://openalex.org/W2057608135","https://openalex.org/W2086556602","https://openalex.org/W2089686332","https://openalex.org/W2092426063","https://openalex.org/W2097027426","https://openalex.org/W2126475442","https://openalex.org/W2153584914","https://openalex.org/W2157046522","https://openalex.org/W2184093296","https://openalex.org/W2592328277"],"related_works":["https://openalex.org/W3109942359","https://openalex.org/W768685490","https://openalex.org/W2071058077","https://openalex.org/W2303457872","https://openalex.org/W2015251329","https://openalex.org/W2320723535","https://openalex.org/W7212241848","https://openalex.org/W1984036902","https://openalex.org/W7098359857","https://openalex.org/W2045650815"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":2}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}