{"id":"https://openalex.org/W2045367303","doi":"https://doi.org/10.1063/1.346156","title":"Thermal annealing effects of defect reduction in GaAs on Si substrates","display_name":"Thermal annealing effects of defect reduction in GaAs on Si substrates","publication_year":1990,"publication_date":"1990-11-01","ids":{"openalex":"https://openalex.org/W2045367303","doi":"https://doi.org/10.1063/1.346156","mag":"2045367303"},"language":"en","primary_location":{"id":"doi:10.1063/1.346156","doi":"https://doi.org/10.1063/1.346156","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.346156","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5039544331","display_name":"Masafumi Yamaguchi","orcid":"https://orcid.org/0000-0002-2825-7217","observed_orcids":["https://orcid.org/0000-0002-2825-7217","https://orcid.org/0000-0002-5601-4749"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masafumi Yamaguchi","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109950857","display_name":"Masami Tachikawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masami Tachikawa","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064204837","display_name":"Yoshio Itoh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshio Itoh","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111738576","display_name":"Mitsuru Sugo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mitsuru Sugo","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109147589","display_name":"Susumu Kondo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Susumu Kondo","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2251713219"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":1.9477,"has_fulltext":false,"cited_by_count":97,"citation_normalized_percentile":{"value":0.85493131,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"68","issue":"9","first_page":"4518","last_page":"4522"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9365000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9365000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.033399999141693115,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.018799999728798866,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gaas-si-heterostructures","display_name":"GaAs/Si heterostructures","score":0.8510000109672546},{"id":"https://openalex.org/keywords/dislocation-density-reduction","display_name":"dislocation density reduction","score":0.8040000200271606},{"id":"https://openalex.org/keywords/thermal-cycle-annealing","display_name":"thermal cycle annealing","score":0.9049999713897705},{"id":"https://openalex.org/keywords/dislocation-annihilation","display_name":"dislocation annihilation","score":0.8140000104904175},{"id":"https://openalex.org/keywords/dislocation-coalescence","display_name":"dislocation coalescence","score":0.8989999890327454},{"id":"https://openalex.org/keywords/thermal-stress","display_name":"thermal stress","score":0.8560000061988831},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.8769999742507935},{"id":"https://openalex.org/keywords/defect-reduction","display_name":"defect reduction","score":0.3490000069141388}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7713499069213867},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7671098709106445},{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.7039739489555359},{"id":"https://openalex.org/C149792144","wikidata":"https://www.wikidata.org/wiki/Q2071902","display_name":"Coalescence (physics)","level":2,"score":0.5756490230560303},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.5116796493530273},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4912242293357849},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.4839785099029541},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.45785582065582275},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.42634329199790955},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35710716247558594},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2529280483722687},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.100404292345047},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C87355193","wikidata":"https://www.wikidata.org/wiki/Q411","display_name":"Astrobiology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.346156","doi":"https://doi.org/10.1063/1.346156","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.346156","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1985411221","https://openalex.org/W2002458078","https://openalex.org/W2010967390","https://openalex.org/W2021486992","https://openalex.org/W2023468749","https://openalex.org/W2034128661","https://openalex.org/W2067601925","https://openalex.org/W2077417891"],"related_works":["https://openalex.org/W2023468749","https://openalex.org/W2013818859","https://openalex.org/W2059443131","https://openalex.org/W1985411221","https://openalex.org/W2075822487","https://openalex.org/W1974563395","https://openalex.org/W2005641161","https://openalex.org/W2080228546","https://openalex.org/W2039007373","https://openalex.org/W3120639832"],"abstract_inverted_index":{"High-quality":[0],"GaAs":[1,43],"films":[2,87],"with":[3,88],"a":[4,55,89],"dislocation":[5,39,72,90],"density":[6,40,91],"of":[7,38,64,92,114],"2\u00d7106":[8],"cm\u22122":[9,96],"on":[10,45],"(100)":[11],"Si":[12,46],"substrates":[13],"have":[14,51],"been":[15,33,52],"obtained":[16],"by":[17,54,71],"thermal":[18,49,76,101,112],"cycle":[19,102],"annealing":[20,50,103],"using":[21],"the":[22,42,115],"metalorganic":[23],"chemical":[24],"vapor":[25],"deposition":[26],"method.":[27],"Dislocation":[28],"behavior":[29],"in":[30,41,58],"GaAs/Si":[31,86],"has":[32],"considered.":[34],"Significant":[35],"reduction":[36],"effects":[37],"layers":[44],"due":[47],"to":[48,68],"analyzed":[53],"simple":[56],"model,":[57],"which":[59],"annihilation":[60],"such":[61],"as":[62],"coalescence":[63],"dislocations":[65],"is":[66,104],"assumed":[67],"be":[69,98],"caused":[70],"movement":[73],"under":[74],"high":[75],"stress":[77],"and":[78],"temperature.":[79],"Numerical":[80],"analysis":[81],"suggests":[82],"that":[83],"excellent":[84],"quality":[85],"less":[93],"than":[94,108],"105":[95],"will":[97],"realized":[99],"if":[100],"carried":[105],"out":[106],"more":[107],"1000":[109],"times":[110],"without":[111],"degradation":[113],"GaAs/Si.":[116]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":9},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}