{"id":"https://openalex.org/W2043982117","doi":"https://doi.org/10.1143/jjap.32.4449","title":"Experimental Studies on the Electronic Structure of Pb1-xEuxTe","display_name":"Experimental Studies on the Electronic Structure of Pb1-xEuxTe","publication_year":1993,"publication_date":"1993-10-01","ids":{"openalex":"https://openalex.org/W2043982117","doi":"https://doi.org/10.1143/jjap.32.4449","mag":"2043982117"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.32.4449","doi":"https://doi.org/10.1143/jjap.32.4449","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.32.4449","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.32.4449/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.32.4449/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5112267689","display_name":"Masayuki Iida","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I150744194","display_name":"Waseda University","ror":"https://ror.org/00ntfnx83","country_code":"JP","type":"education","lineage":["https://openalex.org/I150744194"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masayuki Iida","raw_affiliation_strings":["Department of Electrical Engineering, Waseda University, Ohkubo, 3-4-1 Shinjuku-ku, Tokyo 169"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Waseda University, Ohkubo, 3-4-1 Shinjuku-ku, Tokyo 169","institution_ids":["https://openalex.org/I150744194"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065869949","display_name":"Takanori Shimizu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I150744194","display_name":"Waseda University","ror":"https://ror.org/00ntfnx83","country_code":"JP","type":"education","lineage":["https://openalex.org/I150744194"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takanori Shimizu","raw_affiliation_strings":["Department of Electrical Engineering, Waseda University, Ohkubo, 3-4-1 Shinjuku-ku, Tokyo 169"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Waseda University, Ohkubo, 3-4-1 Shinjuku-ku, Tokyo 169","institution_ids":["https://openalex.org/I150744194"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111833072","display_name":"Hiroyuki Enomoto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I189513530","display_name":"Osaka Electro-Communication University","ror":"https://ror.org/056bksm23","country_code":"JP","type":"education","lineage":["https://openalex.org/I189513530"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroyuki Enomoto","raw_affiliation_strings":["Department of Solid-State Electronics, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa-shi, Osaka 572"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Solid-State Electronics, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa-shi, Osaka 572","institution_ids":["https://openalex.org/I189513530"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110094310","display_name":"Hajime Ozaki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I150744194","display_name":"Waseda University","ror":"https://ror.org/00ntfnx83","country_code":"JP","type":"education","lineage":["https://openalex.org/I150744194"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hajime Ozaki Hajime Ozaki","raw_affiliation_strings":["Department of Electrical Engineering, Waseda University, Ohkubo, 3-4-1 Shinjuku-ku, Tokyo 169"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Waseda University, Ohkubo, 3-4-1 Shinjuku-ku, Tokyo 169","institution_ids":["https://openalex.org/I150744194"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.9609,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.69881946,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"32","issue":"10R","first_page":"4449","last_page":"4449"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.3955000042915344,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.3955000042915344,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10681","display_name":"Rare-earth and actinide compounds","score":0.18790000677108765,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.1023000031709671,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electronic-structure","display_name":"electronic structure","score":0.871999979019165},{"id":"https://openalex.org/keywords/metal-insulator-transition","display_name":"metal-insulator transition","score":0.7839999794960022},{"id":"https://openalex.org/keywords/band-gap","display_name":"band gap","score":0.6069999933242798},{"id":"https://openalex.org/keywords/lattice-parameters","display_name":"lattice parameters","score":0.8209999799728394},{"id":"https://openalex.org/keywords/hot-wall-epitaxy","display_name":"hot wall epitaxy","score":0.8220000267028809},{"id":"https://openalex.org/keywords/single-crystal-films","display_name":"single-crystal thin films","score":0.7960000038146973},{"id":"https://openalex.org/keywords/baf2-substrate","display_name":"BaF2 substrate","score":0.765999972820282},{"id":"https://openalex.org/keywords/transport-properties","display_name":"transport properties","score":0.5519999861717224}],"concepts":[{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.736819326877594},{"id":"https://openalex.org/C168900304","wikidata":"https://www.wikidata.org/wiki/Q171407","display_name":"Valence (chemistry)","level":2,"score":0.6154122352600098},{"id":"https://openalex.org/C132612359","wikidata":"https://www.wikidata.org/wiki/Q625641","display_name":"Lattice constant","level":3,"score":0.6133912205696106},{"id":"https://openalex.org/C86025842","wikidata":"https://www.wikidata.org/wiki/Q5358432","display_name":"Electronic structure","level":2,"score":0.5809479355812073},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5096695423126221},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.5059372782707214},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.504866898059845},{"id":"https://openalex.org/C115624301","wikidata":"https://www.wikidata.org/wiki/Q895901","display_name":"Crystal structure","level":2,"score":0.5035421252250671},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5023188591003418},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.47483593225479126},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4594351649284363},{"id":"https://openalex.org/C143481972","wikidata":"https://www.wikidata.org/wiki/Q901775","display_name":"X-ray spectroscopy","level":3,"score":0.4218613803386688},{"id":"https://openalex.org/C32891209","wikidata":"https://www.wikidata.org/wiki/Q483666","display_name":"Spectroscopy","level":2,"score":0.3665747046470642},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.3624172508716583},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12136894464492798},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.0971476137638092},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09020262956619263},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.07502281665802002},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.06419366598129272},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06341764330863953},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.0},{"id":"https://openalex.org/C147597530","wikidata":"https://www.wikidata.org/wiki/Q369472","display_name":"Computational chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1143/jjap.32.4449","doi":"https://doi.org/10.1143/jjap.32.4449","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.32.4449","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.32.4449/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},{"id":"mag:3046885655","doi":null,"is_oa":false,"landing_page_url":"http://ci.nii.ac.jp/naid/110003899803","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Japanese journal of applied physics. Pt. 1, Regular papers & short notes","raw_type":null}],"best_oa_location":{"id":"doi:10.1143/jjap.32.4449","doi":"https://doi.org/10.1143/jjap.32.4449","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.32.4449","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.32.4449/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":false},"content_urls":{"pdf":"https://content.openalex.org/works/W2043982117.pdf"},"referenced_works_count":25,"referenced_works":["https://openalex.org/W1610076110","https://openalex.org/W1929565213","https://openalex.org/W1963531501","https://openalex.org/W1967349916","https://openalex.org/W1968068262","https://openalex.org/W1968081166","https://openalex.org/W1976756432","https://openalex.org/W1978842765","https://openalex.org/W1986730211","https://openalex.org/W1987459810","https://openalex.org/W1991354536","https://openalex.org/W1999495164","https://openalex.org/W2001483951","https://openalex.org/W2005608443","https://openalex.org/W2015665617","https://openalex.org/W2023025486","https://openalex.org/W2023682929","https://openalex.org/W2024040861","https://openalex.org/W2029713004","https://openalex.org/W2038713379","https://openalex.org/W2052941477","https://openalex.org/W2067605114","https://openalex.org/W2071117478","https://openalex.org/W2073771657","https://openalex.org/W2091793310"],"related_works":["https://openalex.org/W1929565213","https://openalex.org/W2052941477","https://openalex.org/W3046885655","https://openalex.org/W2011603253","https://openalex.org/W7214073933","https://openalex.org/W131370157","https://openalex.org/W1963531501","https://openalex.org/W2369050771","https://openalex.org/W7062009346","https://openalex.org/W2737012870"],"abstract_inverted_index":{"P-":[0],"and":[1,31],"n-type":[2,79],"Pb1-x":[3,102],"Eu":[4,56,103,111],"x":[5,104],"Te":[6,105],"(0\u2264x\u22640.25)":[7],"single-crystal":[8],"films":[9,80,87],"were":[10],"prepared":[11],"on":[12],"BaF2":[13],"(111)":[14],"substrates":[15],"using":[16],"the":[17,27,32,54,64,72,78,85,98,110,120],"hot-wall":[18],"epitaxy":[19],"technique.":[20],"The":[21],"lattice":[22],"constant":[23],"increases":[24,35],"nonlinearly":[25],"with":[26],"composition":[28,125],"ratio":[29,126],"x,":[30],"energy":[33],"gap":[34],"rapidly":[36],"up":[37],"to":[38],"x=0.07,":[39],"while":[40],"its":[41],"rate":[42],"of":[43,77,101],"increase":[44],"decelerates":[45],"for":[46,84,123],"x>0.07.":[47],"X-ray":[48],"photoelectron":[49],"spectroscopy":[50],"measurements":[51,74],"revealed":[52],"that":[53,75],"localized":[55,113],"4f":[57,112],"level":[58],"centers":[59],"around":[60],"1.2-1.5":[61],"eV":[62],"below":[63],"valence":[65],"band":[66],"maximum.":[67],"It":[68],"is":[69,106],"seen":[70],"from":[71],"transport":[73],"all":[76],"are":[81],"metallic":[82],"but":[83],"p-type":[86],"a":[88],"metal-to-insulator":[89],"transition":[90],"takes":[91],"place":[92],"at":[93],"x=0.07.":[94],"Using":[95],"these":[96],"results,":[97],"electronic":[99,121],"structure":[100],"proposed":[107],"in":[108,119],"which":[109],"electron":[114],"plays":[115],"an":[116],"important":[117],"role":[118],"properties":[122],"intermediate":[124],"(x>0.07).":[127]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}