{"id":"https://openalex.org/W2042844481","doi":"https://doi.org/10.1143/jjap.40.2191","title":"Hydrogen Promoted Copper Migration in the High Pressure Anneal Process","display_name":"Hydrogen Promoted Copper Migration in the High Pressure Anneal Process","publication_year":2001,"publication_date":"2001-04-01","ids":{"openalex":"https://openalex.org/W2042844481","doi":"https://doi.org/10.1143/jjap.40.2191","mag":"2042844481"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.40.2191","doi":"https://doi.org/10.1143/jjap.40.2191","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.40.2191","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.40.2191/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.40.2191/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103053898","display_name":"Takao Fujikawa","orcid":"https://orcid.org/0000-0002-4362-7925","observed_orcids":["https://orcid.org/0000-0002-4362-7925"]},"institutions":[{"id":"https://openalex.org/I95946053","display_name":"Kobe Steel (Japan)","ror":"https://ror.org/01d36yb27","country_code":"JP","type":"company","lineage":["https://openalex.org/I95946053"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takao Fujikawa","raw_affiliation_strings":["Machinery Company Kobe Steel, Ltd., 2-3-1, Shinhama Arai-cho, Takasago 676-8670, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Machinery Company Kobe Steel, Ltd., 2-3-1, Shinhama Arai-cho, Takasago 676-8670, Japan","institution_ids":["https://openalex.org/I95946053"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109132896","display_name":"Tetsuya Yoshikawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95946053","display_name":"Kobe Steel (Japan)","ror":"https://ror.org/01d36yb27","country_code":"JP","type":"company","lineage":["https://openalex.org/I95946053"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tetsuya Yoshikawa","raw_affiliation_strings":["Machinery Company Kobe Steel, Ltd., 2-3-1, Shinhama Arai-cho, Takasago 676-8670, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Machinery Company Kobe Steel, Ltd., 2-3-1, Shinhama Arai-cho, Takasago 676-8670, Japan","institution_ids":["https://openalex.org/I95946053"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051280791","display_name":"Takashi Ohnishi","orcid":"https://orcid.org/0000-0002-9228-7250","observed_orcids":["https://orcid.org/0000-0002-9228-7250"]},"institutions":[{"id":"https://openalex.org/I95946053","display_name":"Kobe Steel (Japan)","ror":"https://ror.org/01d36yb27","country_code":"JP","type":"company","lineage":["https://openalex.org/I95946053"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takashi Ohnishi","raw_affiliation_strings":["Technology Development Dept., Kobe Steel, Ltd., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-2271, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development Dept., Kobe Steel, Ltd., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-2271, Japan","institution_ids":["https://openalex.org/I95946053"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5086799270","display_name":"Toshiki Sato","orcid":"https://orcid.org/0000-0001-9267-1693","observed_orcids":["https://orcid.org/0000-0001-9267-1693"]},"institutions":[{"id":"https://openalex.org/I95946053","display_name":"Kobe Steel (Japan)","ror":"https://ror.org/01d36yb27","country_code":"JP","type":"company","lineage":["https://openalex.org/I95946053"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshiki Sato","raw_affiliation_strings":["Technology Development Dept., Kobe Steel, Ltd., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-2271, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development Dept., Kobe Steel, Ltd., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-2271, Japan","institution_ids":["https://openalex.org/I95946053"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I95946053"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":2.1886,"has_fulltext":true,"cited_by_count":33,"citation_normalized_percentile":{"value":0.88165489,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"40","issue":"4R","first_page":"2191","last_page":"2191"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/copper-interconnects","display_name":"copper interconnects","score":0.6679999828338623},{"id":"https://openalex.org/keywords/hydrogen-addition","display_name":"hydrogen addition","score":0.6460000276565552},{"id":"https://openalex.org/keywords/high-pressure-annealing","display_name":"high-pressure annealing","score":0.8019999861717224},{"id":"https://openalex.org/keywords/grain-growth","display_name":"grain growth","score":0.8510000109672546},{"id":"https://openalex.org/keywords/hole-filling","display_name":"hole filling","score":0.5730000138282776},{"id":"https://openalex.org/keywords/thin-film-stress","display_name":"film stress","score":0.7369999885559082},{"id":"https://openalex.org/keywords/microhardness","display_name":"microhardness","score":0.7139999866485596},{"id":"https://openalex.org/keywords/copper-diffusion","display_name":"copper diffusion","score":0.8659999966621399},{"id":"https://openalex.org/keywords/low-k-dielectrics","display_name":"low-k dielectrics","score":0.6890000104904175}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.663368284702301},{"id":"https://openalex.org/C544778455","wikidata":"https://www.wikidata.org/wiki/Q753","display_name":"Copper","level":2,"score":0.6497257947921753},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.6262569427490234},{"id":"https://openalex.org/C116372231","wikidata":"https://www.wikidata.org/wiki/Q605757","display_name":"Copper interconnect","level":3,"score":0.5902788043022156},{"id":"https://openalex.org/C2781098093","wikidata":"https://www.wikidata.org/wiki/Q85787439","display_name":"Softening","level":2,"score":0.5484023690223694},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5067759156227112},{"id":"https://openalex.org/C51576277","wikidata":"https://www.wikidata.org/wiki/Q900134","display_name":"Physical vapor deposition","level":3,"score":0.5022964477539062},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.48201027512550354},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4721802771091461},{"id":"https://openalex.org/C98390173","wikidata":"https://www.wikidata.org/wiki/Q1492573","display_name":"Grain growth","level":3,"score":0.4627547264099121},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3804226517677307},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.3655754327774048},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.3506152629852295},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.3397876024246216},{"id":"https://openalex.org/C192191005","wikidata":"https://www.wikidata.org/wiki/Q466491","display_name":"Grain size","level":2,"score":0.30732959508895874},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.21618035435676575},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.18858784437179565},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1729883849620819},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.40.2191","doi":"https://doi.org/10.1143/jjap.40.2191","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.40.2191","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.40.2191/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/jjap.40.2191","doi":"https://doi.org/10.1143/jjap.40.2191","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.40.2191","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.40.2191/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320309889","display_name":"Chuo University","ror":"https://ror.org/03qvqb743"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2042844481.pdf","grobid_xml":"https://content.openalex.org/works/W2042844481.grobid-xml"},"referenced_works_count":2,"referenced_works":["https://openalex.org/W621228077","https://openalex.org/W2018561991"],"related_works":["https://openalex.org/W2065484620","https://openalex.org/W2033145974","https://openalex.org/W2320505626","https://openalex.org/W2032926539","https://openalex.org/W1964930682","https://openalex.org/W2555118289","https://openalex.org/W3113811675","https://openalex.org/W7160578650","https://openalex.org/W2094618063","https://openalex.org/W2024240296"],"abstract_inverted_index":{"To":[0],"meet":[1],"the":[2,9,32,39,42,46,52,57,60,69,75,87,99,104],"requirement":[3],"of":[4,25,59],"lower":[5],"processing":[6,88],"temperature":[7,89,101],"in":[8,67,73],"high":[10,37],"pressure":[11],"anneal":[12],"process":[13],"(HiPA),":[14],"Cu":[15,61,76],"films":[16],"deposited":[17],"by":[18],"physical":[19],"vapor":[20],"deposition":[21],"(PVD)":[22],"with":[23,107],"addition":[24,54],"hydrogen":[26,53],"were":[27],"investigated.":[28],"Experimental":[29],"results":[30],"on":[31],"hole":[33],"filling":[34],"performance":[35],"under":[36],"pressure,":[38],"grain":[40,82],"growth,":[41],"micro-hardness":[43],"measurement":[44,49],"and":[45],"film":[47,71],"stress":[48],"revealed":[50],"that":[51],"markedly":[55],"changes":[56],"properties":[58],"film.":[62],"It":[63],"is":[64,98],"especially":[65],"effective":[66],"softening":[68],"PVD-Cu":[70],"and/or":[72],"promoting":[74],"atom":[77],"diffusion":[78],"which":[79,97],"also":[80],"promotes":[81],"growth.":[83],"As":[84],"a":[85],"result":[86],"may":[90],"be":[91],"lowered":[92],"down":[93],"to":[94],"around":[95],"400\u00b0C,":[96],"highest":[100],"allowable":[102],"for":[103],"interconnection":[105],"structures":[106],"organic":[108],"low-k":[109],"dielectric":[110],"layers.":[111]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2016-06-24T00:00:00"}
