{"id":"https://openalex.org/W2041384994","doi":"https://doi.org/10.1049/el:19951273","title":"High speed, monolithically integrated pin -HEMTphotoreceiver fabricated on InPwith 18 GHz bandwidth","display_name":"High speed, monolithically integrated pin -HEMTphotoreceiver fabricated on InPwith 18 GHz bandwidth","publication_year":1995,"publication_date":"1995-10-12","ids":{"openalex":"https://openalex.org/W2041384994","doi":"https://doi.org/10.1049/el:19951273","mag":"2041384994"},"language":"en","primary_location":{"id":"doi:10.1049/el:19951273","doi":"https://doi.org/10.1049/el:19951273","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19951273","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072645744","display_name":"B.-U.H. Klepser","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"B.-U.H. Klepser","raw_affiliation_strings":["Laboratory for Electromagnetic Fields and Microwave Electronics, Swiss Federal Institute of Technology Zu\u0308rich, Gloriastr. 35, Zu\u0308rich, CH-8092, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Electromagnetic Fields and Microwave Electronics, Swiss Federal Institute of Technology Zu\u0308rich, Gloriastr. 35, Zu\u0308rich, CH-8092, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012158168","display_name":"J. Spicher","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"J. Spicher","raw_affiliation_strings":["Institut de Micro- et Optoelectronique, EPFL, Lausanne, CH-1015, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut de Micro- et Optoelectronique, EPFL, Lausanne, CH-1015, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057664890","display_name":"Mattias Beck","orcid":"https://orcid.org/0000-0002-0260-5797","observed_orcids":["https://orcid.org/0000-0002-0260-5797"]},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"M. Beck","raw_affiliation_strings":["Institut de Micro- et Optoelectronique, EPFL, Lausanne, CH-1015, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut de Micro- et Optoelectronique, EPFL, Lausanne, CH-1015, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031991434","display_name":"C. Bergamaschi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"C. Bergamaschi","raw_affiliation_strings":["Laboratory for Electromagnetic Fields and Microwave Electronics, Swiss Federal Institute of Technology Zu\u0308rich, Gloriastr. 35, Zu\u0308rich, CH-8092, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Electromagnetic Fields and Microwave Electronics, Swiss Federal Institute of Technology Zu\u0308rich, Gloriastr. 35, Zu\u0308rich, CH-8092, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111556717","display_name":"W. Patrick","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"W. Patrick","raw_affiliation_strings":["Laboratory for Electromagnetic Fields and Microwave Electronics, Swiss Federal Institute of Technology Zu\u0308rich, Gloriastr. 35, Zu\u0308rich, CH-8092, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Electromagnetic Fields and Microwave Electronics, Swiss Federal Institute of Technology Zu\u0308rich, Gloriastr. 35, Zu\u0308rich, CH-8092, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113698259","display_name":"Werner B\u00e4chtold","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"W. Ba\u0308chtold","raw_affiliation_strings":["Laboratory for Electromagnetic Fields and Microwave Electronics, Swiss Federal Institute of Technology Zu\u0308rich, Gloriastr. 35, Zu\u0308rich, CH-8092, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Electromagnetic Fields and Microwave Electronics, Swiss Federal Institute of Technology Zu\u0308rich, Gloriastr. 35, Zu\u0308rich, CH-8092, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2590,"currency":"USD","value_usd":2590},"apc_paid":null,"fwci":2.7783,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.89223438,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"31","issue":"21","first_page":"1831","last_page":"1833"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.37380000948905945,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.37380000948905945,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10767","display_name":"Advanced Photonic Communication Systems","score":0.36160001158714294,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.1256999969482422,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pin-photodiode","display_name":"PIN photodiode","score":0.8510000109672546},{"id":"https://openalex.org/keywords/inp-substrate","display_name":"InP substrate","score":0.6919999718666077},{"id":"https://openalex.org/keywords/monolithic-integration","display_name":"monolithic integration","score":0.8399999737739563},{"id":"https://openalex.org/keywords/high-speed-photodetection","display_name":"high-speed photodetection","score":0.7229999899864197}],"concepts":[{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.7277767062187195},{"id":"https://openalex.org/C751236","wikidata":"https://www.wikidata.org/wiki/Q175943","display_name":"Photodiode","level":2,"score":0.7008268237113953},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6875273585319519},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6687837243080139},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6433526873588562},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.620061457157135},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.4257892072200775},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3707425594329834},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22945189476013184},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.20976972579956055},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14188385009765625},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1248207688331604},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.10239368677139282},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.08074221014976501},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1049/el:19951273","doi":"https://doi.org/10.1049/el:19951273","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19951273","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1580211294","https://openalex.org/W1908796990","https://openalex.org/W2003155271","https://openalex.org/W2082780928","https://openalex.org/W2159540000"],"related_works":["https://openalex.org/W2158958085","https://openalex.org/W7011541741","https://openalex.org/W1627626245","https://openalex.org/W1569351723","https://openalex.org/W1827000685","https://openalex.org/W1908796990","https://openalex.org/W2989193139","https://openalex.org/W2060323911","https://openalex.org/W1878704620","https://openalex.org/W2135522786"],"abstract_inverted_index":{"An":[0],"integrated":[1,55],"photoreceiver":[2,56],"using":[3],"a":[4,19],"pin":[5],"photodiode":[6],"and":[7,13],"GaInAs/AlInAs":[8],"HEMTs":[9],"has":[10],"been":[11],"fabricated":[12],"characterised.":[14],"The":[15],"circuitry":[16],"consists":[17],"of":[18,38],"high":[20],"input":[21,34],"impedance":[22],"front-end":[23],"followed":[24],"by":[25],"an":[26,54],"equalising":[27],"second":[28],"stage":[29],"to":[30,45],"compensate":[31],"for":[32,53],"the":[33,46,49],"capacitance.":[35],"A":[36],"bandwidth":[37,52],"18":[39],"GHz":[40],"was":[41],"achieved":[42],"which":[43],"is,":[44],"authors'":[47],"knowledge,":[48],"highest":[50],"reported":[51],"on":[57],"InP.":[58]},"counts_by_year":[],"updated_date":"2026-10-17T09:40:24.721904","created_date":"2016-06-24T00:00:00"}