{"id":"https://openalex.org/W2040887205","doi":"https://doi.org/10.1109/irps.2010.5488858","title":"The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress","display_name":"The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress","publication_year":2010,"publication_date":"2010-05-01","ids":{"openalex":"https://openalex.org/W2040887205","doi":"https://doi.org/10.1109/irps.2010.5488858","mag":"2040887205"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2010.5488858","doi":"https://doi.org/10.1109/irps.2010.5488858","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2010.5488858","pdf_url":null,"source":{"id":"https://openalex.org/S4210238090","display_name":"IEEE International Reliability Physics Symposium proceedings","issn_l":"0735-0791","issn":["0735-0791","1541-7026","1938-1891"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5081937576","display_name":"H. Reisinger","orcid":"https://orcid.org/0000-0001-6776-349X","observed_orcids":["https://orcid.org/0000-0001-6776-349X"]},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hans Reisinger","raw_affiliation_strings":["Infineon Technologies AG, M\u00fcnchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, M\u00fcnchen, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062594496","display_name":"Tibor Grasser","orcid":"https://orcid.org/0000-0001-6536-2238","observed_orcids":["https://orcid.org/0000-0001-6536-2238"]},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]},{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT","DE"],"is_corresponding":false,"raw_author_name":"Tibor Grasser","raw_affiliation_strings":["Infineon Technologies, Munchen, Germany","Institute for Microelectronics, TU Wien, Wien, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Munchen, Germany","institution_ids":["https://openalex.org/I137594350"]},{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Wien, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057555248","display_name":"Wolfgang Gustin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Wolfgang Gustin","raw_affiliation_strings":["Infineon Technologies AG, M\u00fcnchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, M\u00fcnchen, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5000945421","display_name":"Christian Schl\u00fcnder","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Christian Schlunder","raw_affiliation_strings":["Infineon Technologies AG, M\u00fcnchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, M\u00fcnchen, Germany","institution_ids":["https://openalex.org/I137594350"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":29.6455,"has_fulltext":false,"cited_by_count":205,"citation_normalized_percentile":{"value":0.99898508,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"7","last_page":"15"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9657999873161316,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9657999873161316,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.017000000923871994,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.0015999999595806003,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"negative bias temperature instability","score":0.9829999804496765},{"id":"https://openalex.org/keywords/nbti","display_name":"NBTI","score":0.7329999804496765},{"id":"https://openalex.org/keywords/electric-field-dependence","display_name":"electric field dependence","score":0.8109999895095825},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.9900000095367432},{"id":"https://openalex.org/keywords/physics-based-degradation-model","display_name":"physics-based degradation model","score":0.8790000081062317},{"id":"https://openalex.org/keywords/nbti-recovery","display_name":"NBTI recovery","score":0.7739999890327454},{"id":"https://openalex.org/keywords/stress-history","display_name":"stress history","score":0.6660000085830688},{"id":"https://openalex.org/keywords/transistor-reliability","display_name":"transistor reliability","score":0.3190000057220459}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.8859453201293945},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6609804034233093},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6240329146385193},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4958516061306},{"id":"https://openalex.org/C18762648","wikidata":"https://www.wikidata.org/wiki/Q42213","display_name":"Work (physics)","level":2,"score":0.4548951983451843},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4423619508743286},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41769939661026},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.40547701716423035},{"id":"https://openalex.org/C121864883","wikidata":"https://www.wikidata.org/wiki/Q677916","display_name":"Statistical physics","level":1,"score":0.3708958625793457},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.3317171335220337},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.26407378911972046},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2547156810760498},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22356438636779785},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1638934314250946},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.15830621123313904},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.09547489881515503},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2010.5488858","doi":"https://doi.org/10.1109/irps.2010.5488858","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2010.5488858","pdf_url":null,"source":{"id":"https://openalex.org/S4210238090","display_name":"IEEE International Reliability Physics Symposium proceedings","issn_l":"0735-0791","issn":["0735-0791","1541-7026","1938-1891"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 IEEE International Reliability Physics Symposium","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W1507976533","https://openalex.org/W1985340182","https://openalex.org/W1986415905","https://openalex.org/W1988922865","https://openalex.org/W2035338135","https://openalex.org/W2035374584","https://openalex.org/W2037328774","https://openalex.org/W2037752059","https://openalex.org/W2041598550","https://openalex.org/W2043365391","https://openalex.org/W2062874667","https://openalex.org/W2088482452","https://openalex.org/W2105524106","https://openalex.org/W2107603213","https://openalex.org/W2110688675","https://openalex.org/W2131744356","https://openalex.org/W2132519925","https://openalex.org/W2142047886","https://openalex.org/W2151958832","https://openalex.org/W2153685625","https://openalex.org/W2153710771","https://openalex.org/W2537791337","https://openalex.org/W2538731448","https://openalex.org/W2541842112"],"related_works":["https://openalex.org/W2374313965","https://openalex.org/W2157278395","https://openalex.org/W1991431227","https://openalex.org/W2059440611","https://openalex.org/W3143610959","https://openalex.org/W2905252662","https://openalex.org/W1815542355","https://openalex.org/W2152540334","https://openalex.org/W4289655666","https://openalex.org/W2621126165"],"abstract_inverted_index":{"The":[0],"physical":[1],"origin":[2],"of":[3,33,41,46,62,85,111],"the":[4,19,47,55,59,93,112],"Negative":[5],"Bias":[6],"Temperature":[7],"Instability":[8],"(NBTI)":[9],"is":[10],"still":[11],"under":[12],"debate.":[13],"In":[14],"this":[15],"work":[16],"we":[17,50,72],"analyze":[18],"single":[20],"defects":[21,64],"constituting":[22],"NBTI.":[23],"We":[24],"introduce":[25],"a":[26,31,38,76,82,101],"new":[27],"measurement":[28],"technique":[29],"stimulating":[30],"charging":[32],"these":[34,63],"defects.":[35],"By":[36],"employing":[37],"statistical":[39],"analysis":[40],"many":[42],"stochastic":[43],"stimulation":[44],"processes":[45],"same":[48],"defect":[49],"are":[51],"able":[52],"to":[53,106],"determine":[54],"electric":[56],"field":[57],"and":[58,74,88,98,108],"temperature":[60],"dependence":[61],"with":[65,118],"great":[66],"precision.":[67],"Based":[68],"on":[69],"our":[70],"experiments":[71],"present":[73],"verify":[75],"new,":[77],"physics-based,":[78],"quantitative":[79],"model":[80,91],"allowing":[81],"precise":[83],"prediction":[84,102],"NBTI":[86],"degradation":[87,104],"recovery.":[89],"This":[90],"takes":[92],"stress":[94],"history":[95],"into":[96],"account":[97],"also":[99],"provides":[100],"for":[103],"due":[105],"AC-NBTI":[107],"an":[109],"understanding":[110],"special":[113],"features":[114],"seen":[115],"in":[116],"conjunction":[117],"AC-NBTI.":[119]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":14},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":14},{"year":2017,"cited_by_count":16},{"year":2016,"cited_by_count":18},{"year":2015,"cited_by_count":16},{"year":2014,"cited_by_count":36},{"year":2013,"cited_by_count":25},{"year":2012,"cited_by_count":22}],"updated_date":"2026-10-17T09:40:24.721904","created_date":"2025-10-10T00:00:00"}