{"id":"https://openalex.org/W2038043311","doi":"https://doi.org/10.1109/iedm.2011.6131565","title":"Complementary thin-base symmetric lateral bipolar transistors on SOI","display_name":"Complementary thin-base symmetric lateral bipolar transistors on SOI","publication_year":2011,"publication_date":"2011-12-01","ids":{"openalex":"https://openalex.org/W2038043311","doi":"https://doi.org/10.1109/iedm.2011.6131565","mag":"2038043311"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.2011.6131565","doi":"https://doi.org/10.1109/iedm.2011.6131565","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2011.6131565","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 International Electron Devices Meeting","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113789374","display_name":"Jin Cai","orcid":"https://orcid.org/0000-0002-9543-253X","observed_orcids":["https://orcid.org/0000-0002-9543-253X"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jin Cai","raw_affiliation_strings":["IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103102563","display_name":"Tak H. Ning","orcid":"https://orcid.org/0000-0003-3140-8175","observed_orcids":["https://orcid.org/0000-0003-3140-8175"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Tak H. Ning","raw_affiliation_strings":["IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070935907","display_name":"Chris D'Emic","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chris D'Emic","raw_affiliation_strings":["IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027269106","display_name":"K. Chan","orcid":"https://orcid.org/0000-0002-9021-6520","observed_orcids":["https://orcid.org/0000-0002-9021-6520"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kevin K. Chan","raw_affiliation_strings":["IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019945492","display_name":"Wilfried H\u00e4nsch","orcid":"https://orcid.org/0000-0003-1725-7171","observed_orcids":["https://orcid.org/0000-0003-1725-7171","https://orcid.org/0009-0007-1988-4378"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wilfried E. Haensch","raw_affiliation_strings":["IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004688847","display_name":"Jeng-Bang Yau","orcid":"https://orcid.org/0000-0002-2449-8777","observed_orcids":["https://orcid.org/0000-0002-2449-8777"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jeng-Bang Yau","raw_affiliation_strings":["IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5049364750","display_name":"Dae-Gyu Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dae-Gyu Park","raw_affiliation_strings":["IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA","institution_ids":["https://openalex.org/I4210114115"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210114115"],"apc_list":null,"apc_paid":null,"fwci":2.9709,"has_fulltext":false,"cited_by_count":31,"citation_normalized_percentile":{"value":0.91278104,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":87,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"16.3.1","last_page":"16.3.4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0013000000035390258,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/lateral-bipolar-transistor","display_name":"lateral bipolar transistor","score":0.8289999961853027},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.9509999752044678},{"id":"https://openalex.org/keywords/cmos-integration","display_name":"CMOS integration","score":0.6489999890327454},{"id":"https://openalex.org/keywords/high-frequency-performance","display_name":"high-frequency performance","score":0.5410000085830688},{"id":"https://openalex.org/keywords/switching-speed","display_name":"switching speed","score":0.5569999814033508},{"id":"https://openalex.org/keywords/low-voltage-applications","display_name":"low voltage applications","score":0.578000009059906},{"id":"https://openalex.org/keywords/memory-applications","display_name":"memory applications","score":0.9190000295639038}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7218824028968811},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.690230667591095},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5717518925666809},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5286325216293335},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.49452993273735046},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.445411741733551},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.43432819843292236},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4322700500488281},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.43100571632385254},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.41782188415527344},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.34352558851242065},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3307077884674072},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1690918505191803}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.2011.6131565","doi":"https://doi.org/10.1109/iedm.2011.6131565","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2011.6131565","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 International Electron Devices Meeting","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1513953104","https://openalex.org/W1661368752","https://openalex.org/W2532446836","https://openalex.org/W2536875683","https://openalex.org/W2546191312"],"related_works":["https://openalex.org/W1966779309","https://openalex.org/W1559221152","https://openalex.org/W2316022610","https://openalex.org/W2114840291","https://openalex.org/W2546781554","https://openalex.org/W2626828832","https://openalex.org/W2536875683","https://openalex.org/W2107710629","https://openalex.org/W2129285484","https://openalex.org/W2070992199"],"abstract_inverted_index":{"CMOS":[0,36],"and":[1,81,87,106,117],"bipolar":[2,26,52,61,72],"technologies":[3],"are":[4,120],"intrinsically":[5],"distinct.":[6],"To":[7],"take":[8],"advantage":[9],"of":[10,14,43,109],"the":[11,41,48,67],"beneficial":[12],"attributes":[13],"both":[15],"will":[16,30],"drive":[17],"expensive":[18],"high":[19,50,78],"mask":[20],"count":[21],"processes.":[22],"We":[23],"present":[24,46],"a":[25],"device":[27],"architecture":[28],"that":[29,98],"naturally":[31],"integrate":[32],"into":[33],"an":[34],"existing":[35],"process":[37],"flow":[38],"without":[39],"adding":[40],"complexity":[42],"vertical":[44],"scaling":[45],"in":[47,85],"conventional":[49,71],"performance":[51,75],"technologies.":[53],"Symmetric":[54],"thin-base":[55],"silicon":[56],"on":[57],"insulator":[58],"(SOI)":[59],"lateral":[60],"transistor":[62],"is":[63],"proposed.":[64],"It":[65],"overcomes":[66],"problems":[68],"associated":[69],"with":[70,102],"transistors":[73],"including":[74],"degradation":[76],"at":[77],"current":[79,103],"density":[80],"slow":[82],"switching":[83],"speed":[84],"saturation":[86],"fabricated":[88],"samples":[89],"show":[90],"immunity":[91],"to":[92],"base-push-out":[93],"effect.":[94],"Simulation":[95],"results":[96],"suggest":[97],"THz":[99],"fMAXis":[100],"possible":[101],"lithography":[104],"capability":[105],"SOI":[107],"thickness":[108],"20":[110],"nm.":[111],"Primary":[112],"applications":[113,119],"for":[114],"low":[115],"voltage":[116],"memory":[118],"discussed.":[121]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":6},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":2}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}