{"id":"https://openalex.org/W2036620451","doi":"https://doi.org/10.1016/0168-583x(91)95772-6","title":"Carrier concentration profiles by high-energy boron ion implantation into silicon","display_name":"Carrier concentration profiles by high-energy boron ion implantation into silicon","publication_year":1991,"publication_date":"1991-07-01","ids":{"openalex":"https://openalex.org/W2036620451","doi":"https://doi.org/10.1016/0168-583x(91)95772-6","mag":"2036620451"},"language":"en","primary_location":{"id":"doi:10.1016/0168-583x(91)95772-6","doi":"https://doi.org/10.1016/0168-583x(91)95772-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0168-583x(91)95772-6","pdf_url":null,"source":{"id":"https://openalex.org/S113542562","display_name":"Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms","issn_l":"0168-583X","issn":["0168-583X","1872-9584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110160976","display_name":"H. Sayama","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210124274","display_name":"Fraunhofer Institute for Integrated Circuits","ror":"https://ror.org/024ape423","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210124274","https://openalex.org/I4923324"]},{"id":"https://openalex.org/I4923324","display_name":"Fraunhofer-Gesellschaft","ror":"https://ror.org/05hkkdn48","country_code":"DE","type":"government","lineage":["https://openalex.org/I4923324"]},{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["DE","JP"],"is_corresponding":false,"raw_author_name":"H. Sayama","raw_affiliation_strings":["Faculty of Engineering Science and Research Center for Extreme Materials (RCEM), Osaka University, Toyonaka, Osaka 560, Japan","Fraunhofer-AIS, Artillerie strasse 12, W-8520 Erlangen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering Science and Research Center for Extreme Materials (RCEM), Osaka University, Toyonaka, Osaka 560, Japan","institution_ids":["https://openalex.org/I98285908"]},{"raw_affiliation_string":"Fraunhofer-AIS, Artillerie strasse 12, W-8520 Erlangen, Germany","institution_ids":["https://openalex.org/I4210124274","https://openalex.org/I4923324"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113311479","display_name":"M. Takai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210124274","display_name":"Fraunhofer Institute for Integrated Circuits","ror":"https://ror.org/024ape423","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210124274","https://openalex.org/I4923324"]},{"id":"https://openalex.org/I4923324","display_name":"Fraunhofer-Gesellschaft","ror":"https://ror.org/05hkkdn48","country_code":"DE","type":"government","lineage":["https://openalex.org/I4923324"]},{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["DE","JP"],"is_corresponding":false,"raw_author_name":"M. Takai","raw_affiliation_strings":["Faculty of Engineering Science and Research Center for Extreme Materials (RCEM), Osaka University, Toyonaka, Osaka 560, Japan","Fraunhofer-AIS, Artillerie strasse 12, W-8520 Erlangen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering Science and Research Center for Extreme Materials (RCEM), Osaka University, Toyonaka, Osaka 560, Japan","institution_ids":["https://openalex.org/I98285908"]},{"raw_affiliation_string":"Fraunhofer-AIS, Artillerie strasse 12, W-8520 Erlangen, Germany","institution_ids":["https://openalex.org/I4210124274","https://openalex.org/I4923324"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002176402","display_name":"Shigetou NAMBA","orcid":"https://orcid.org/0000-0002-1473-4633","observed_orcids":["https://orcid.org/0000-0002-1473-4633"]},"institutions":[{"id":"https://openalex.org/I4210124274","display_name":"Fraunhofer Institute for Integrated Circuits","ror":"https://ror.org/024ape423","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210124274","https://openalex.org/I4923324"]},{"id":"https://openalex.org/I4923324","display_name":"Fraunhofer-Gesellschaft","ror":"https://ror.org/05hkkdn48","country_code":"DE","type":"government","lineage":["https://openalex.org/I4923324"]},{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["DE","JP"],"is_corresponding":false,"raw_author_name":"S. Namba","raw_affiliation_strings":["Faculty of Engineering Science and Research Center for Extreme Materials (RCEM), Osaka University, Toyonaka, Osaka 560, Japan","Fraunhofer-AIS, Artillerie strasse 12, W-8520 Erlangen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering Science and Research Center for Extreme Materials (RCEM), Osaka University, Toyonaka, Osaka 560, Japan","institution_ids":["https://openalex.org/I98285908"]},{"raw_affiliation_string":"Fraunhofer-AIS, Artillerie strasse 12, W-8520 Erlangen, Germany","institution_ids":["https://openalex.org/I4210124274","https://openalex.org/I4923324"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5012487905","display_name":"H. Ryssel","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210124274","display_name":"Fraunhofer Institute for Integrated Circuits","ror":"https://ror.org/024ape423","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210124274","https://openalex.org/I4923324"]},{"id":"https://openalex.org/I4923324","display_name":"Fraunhofer-Gesellschaft","ror":"https://ror.org/05hkkdn48","country_code":"DE","type":"government","lineage":["https://openalex.org/I4923324"]},{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["DE","JP"],"is_corresponding":false,"raw_author_name":"H. Ryssel","raw_affiliation_strings":["Faculty of Engineering Science and Research Center for Extreme Materials (RCEM), Osaka University, Toyonaka, Osaka 560, Japan","Fraunhofer-AIS, Artillerie strasse 12, W-8520 Erlangen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering Science and Research Center for Extreme Materials (RCEM), Osaka University, Toyonaka, Osaka 560, Japan","institution_ids":["https://openalex.org/I98285908"]},{"raw_affiliation_string":"Fraunhofer-AIS, Artillerie strasse 12, W-8520 Erlangen, Germany","institution_ids":["https://openalex.org/I4210124274","https://openalex.org/I4923324"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2810,"currency":"USD","value_usd":2810},"apc_paid":null,"fwci":1.8011,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.82292052,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"59-60","issue":null,"first_page":"1094","last_page":"1097"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.9473000168800354,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.9473000168800354,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.022600000724196434,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.016499999910593033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/boron-implantation","display_name":"boron implantation","score":0.9559999704360962},{"id":"https://openalex.org/keywords/carrier-concentration-profile","display_name":"carrier density distribution","score":0.8759999871253967},{"id":"https://openalex.org/keywords/p-type-silicon","display_name":"p-type silicon","score":0.9810000061988831},{"id":"https://openalex.org/keywords/high-energy-implantation","display_name":"high-energy implantation","score":0.8220000267028809},{"id":"https://openalex.org/keywords/post-implantation-annealing","display_name":"post-implantation annealing","score":0.8920000195503235},{"id":"https://openalex.org/keywords/capacitance-voltage-characteristics","display_name":"capacitance-voltage characteristics","score":0.7269999980926514},{"id":"https://openalex.org/keywords/one-dimensional-simulation","display_name":"one-dimensional simulation","score":0.6079999804496765},{"id":"https://openalex.org/keywords/trim-simulation","display_name":"TRIM simulation","score":0.7739999890327454},{"id":"https://openalex.org/keywords/diffusion-simulation","display_name":"diffusion simulation","score":0.46000000834465027},{"id":"https://openalex.org/keywords/dopant-distribution","display_name":"dopant distribution","score":0.5090000033378601}],"concepts":[{"id":"https://openalex.org/C501308230","wikidata":"https://www.wikidata.org/wiki/Q618","display_name":"Boron","level":2,"score":0.7436130046844482},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.7404979467391968},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7122769355773926},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6835451126098633},{"id":"https://openalex.org/C19499675","wikidata":"https://www.wikidata.org/wiki/Q232207","display_name":"Monte Carlo method","level":2,"score":0.6652789115905762},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.5903131365776062},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.559600293636322},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.5260263085365295},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5115200281143188},{"id":"https://openalex.org/C88611116","wikidata":"https://www.wikidata.org/wiki/Q957004","display_name":"Trim","level":2,"score":0.4995541572570801},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.49844932556152344},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3686726689338684},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19878968596458435},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07555007934570312},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.05465453863143921},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1016/0168-583x(91)95772-6","doi":"https://doi.org/10.1016/0168-583x(91)95772-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0168-583x(91)95772-6","pdf_url":null,"source":{"id":"https://openalex.org/S113542562","display_name":"Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms","issn_l":"0168-583X","issn":["0168-583X","1872-9584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","raw_type":"journal-article"},{"id":"pmh:oai:publica.fraunhofer.de:publica/179739","doi":null,"is_oa":false,"landing_page_url":"https://publica.fraunhofer.de/handle/publica/179739","pdf_url":null,"source":{"id":"https://openalex.org/S4306400318","display_name":"Fraunhofer-Publica (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"journal article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320912","display_name":"Ministry of Education, Culture, Sports, Science and Technology","ror":"https://ror.org/048rj2z13"},{"id":"https://openalex.org/F4320334764","display_name":"Japan Society for the Promotion of Science","ror":"https://ror.org/00hhkn466"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1991556167","https://openalex.org/W2024928665","https://openalex.org/W2025819317","https://openalex.org/W2055881008","https://openalex.org/W2058234237","https://openalex.org/W2062877670","https://openalex.org/W2082864020","https://openalex.org/W2987637782"],"related_works":["https://openalex.org/W4250937130","https://openalex.org/W2007051384","https://openalex.org/W1992415865","https://openalex.org/W2038174710","https://openalex.org/W2006863634","https://openalex.org/W2110903563","https://openalex.org/W2011127533","https://openalex.org/W2107909730","https://openalex.org/W2019340162","https://openalex.org/W2015068000"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}