{"id":"https://openalex.org/W2035683142","doi":"https://doi.org/10.1109/tns.1987.4337499","title":"Radiation Response of High Speed CMOS Integrated Circuits","display_name":"Radiation Response of High Speed CMOS Integrated Circuits","publication_year":1987,"publication_date":"1987-01-01","ids":{"openalex":"https://openalex.org/W2035683142","doi":"https://doi.org/10.1109/tns.1987.4337499","mag":"2035683142"},"language":"en","primary_location":{"id":"doi:10.1109/tns.1987.4337499","doi":"https://doi.org/10.1109/tns.1987.4337499","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tns.1987.4337499","pdf_url":null,"source":{"id":"https://openalex.org/S14279044","display_name":"IEEE Transactions on Nuclear Science","issn_l":"0018-9499","issn":["0018-9499","1558-1578"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Nuclear Science","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"H. Yue","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"H. Yue","raw_affiliation_strings":["ROLM Mil Spec Computers Corporation, San Jose, CA, USA","ROLM Mil Spec Computers Corp., San Jose, CA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ROLM Mil Spec Computers Corporation, San Jose, CA, USA","institution_ids":[]},{"raw_affiliation_string":"ROLM Mil Spec Computers Corp., San Jose, CA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080482945","display_name":"David Davison","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"D. Davison","raw_affiliation_strings":["ROLM Mil Spec Computers Corporation, San Jose, CA, USA","ROLM Mil Spec Computers Corp., San Jose, CA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ROLM Mil Spec Computers Corporation, San Jose, CA, USA","institution_ids":[]},{"raw_affiliation_string":"ROLM Mil Spec Computers Corp., San Jose, CA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059964103","display_name":"R. Jennings","orcid":"https://orcid.org/0000-0003-0885-3369","observed_orcids":["https://orcid.org/0000-0003-0885-3369"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R. F. Jennings","raw_affiliation_strings":["ROLM Mil Spec Computers Corporation, San Jose, CA, USA","ROLM Mil Spec Computers Corp., San Jose, CA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ROLM Mil Spec Computers Corporation, San Jose, CA, USA","institution_ids":[]},{"raw_affiliation_string":"ROLM Mil Spec Computers Corp., San Jose, CA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036479328","display_name":"P. Lothongkam","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I37891753","display_name":"Integrated Device Technology (United States)","ror":"https://ror.org/03yvs0f43","country_code":"US","type":"company","lineage":["https://openalex.org/I37891753","https://openalex.org/I4210153176"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. Lothongkam","raw_affiliation_strings":["IDT Corporation, Santa Clara, CA, USA","IDT Corp., Santa Clara, CA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IDT Corporation, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I37891753"]},{"raw_affiliation_string":"IDT Corp., Santa Clara, CA","institution_ids":["https://openalex.org/I37891753"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056817099","display_name":"Darrell Rinerson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I37891753","display_name":"Integrated Device Technology (United States)","ror":"https://ror.org/03yvs0f43","country_code":"US","type":"company","lineage":["https://openalex.org/I37891753","https://openalex.org/I4210153176"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Rinerson","raw_affiliation_strings":["IDT Corporation, Santa Clara, CA, USA","IDT Corp., Santa Clara, CA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IDT Corporation, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I37891753"]},{"raw_affiliation_string":"IDT Corp., Santa Clara, CA","institution_ids":["https://openalex.org/I37891753"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064027833","display_name":"David C. Wyland","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I37891753","display_name":"Integrated Device Technology (United States)","ror":"https://ror.org/03yvs0f43","country_code":"US","type":"company","lineage":["https://openalex.org/I37891753","https://openalex.org/I4210153176"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Wyland","raw_affiliation_strings":["IDT Corporation, Santa Clara, CA, USA","IDT Corp., Santa Clara, CA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IDT Corporation, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I37891753"]},{"raw_affiliation_string":"IDT Corp., Santa Clara, CA","institution_ids":["https://openalex.org/I37891753"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.5027,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.66125793,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"34","issue":"6","first_page":"1464","last_page":"1466"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11044","display_name":"Particle Detector Development and Performance","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/radiation-response","display_name":"radiation response","score":0.6290000081062317},{"id":"https://openalex.org/keywords/total-dose","display_name":"total dose","score":0.5080000162124634},{"id":"https://openalex.org/keywords/dose-rate","display_name":"dose rate","score":0.9350000023841858},{"id":"https://openalex.org/keywords/high-speed-cmos","display_name":"high-speed CMOS","score":0.8659999966621399},{"id":"https://openalex.org/keywords/integrated-circuits","display_name":"integrated circuits","score":0.7689999938011169},{"id":"https://openalex.org/keywords/failure-modes","display_name":"failure modes","score":0.8899999856948853},{"id":"https://openalex.org/keywords/goldschmidt-tolerance-factor","display_name":"tolerance factor","score":0.8270000219345093},{"id":"https://openalex.org/keywords/normal-distribution","display_name":"normal distribution","score":0.6489999890327454}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8199785947799683},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6675353050231934},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.5685442686080933},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5083441138267517},{"id":"https://openalex.org/C159903706","wikidata":"https://www.wikidata.org/wiki/Q173574","display_name":"Integrated injection logic","level":5,"score":0.4661857783794403},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.43669429421424866},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3622281849384308},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26014524698257446},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21625584363937378},{"id":"https://openalex.org/C81843906","wikidata":"https://www.wikidata.org/wiki/Q173156","display_name":"Digital electronics","level":3,"score":0.1337786316871643},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.10977137088775635},{"id":"https://openalex.org/C198521697","wikidata":"https://www.wikidata.org/wiki/Q7142438","display_name":"Pass transistor logic","level":4,"score":0.09713193774223328}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tns.1987.4337499","doi":"https://doi.org/10.1109/tns.1987.4337499","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tns.1987.4337499","pdf_url":null,"source":{"id":"https://openalex.org/S14279044","display_name":"IEEE Transactions on Nuclear Science","issn_l":"0018-9499","issn":["0018-9499","1558-1578"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Nuclear Science","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1971903606","https://openalex.org/W2010875838","https://openalex.org/W2022069646","https://openalex.org/W2033541528"],"related_works":["https://openalex.org/W2382376644","https://openalex.org/W2070866516","https://openalex.org/W2388531317","https://openalex.org/W2009080629","https://openalex.org/W2028122088","https://openalex.org/W2145835021","https://openalex.org/W2018525092","https://openalex.org/W2070031845","https://openalex.org/W7013911321","https://openalex.org/W6922838899"],"abstract_inverted_index":{"This":[0],"paper":[1],"studies":[2],"the":[3,12,24,30],"total":[4],"dose":[5,7],"and":[6,34],"rate":[8],"radiation":[9],"response":[10],"of":[11,15],"FCT":[13],"family":[14],"high":[16],"speed":[17],"CMOS":[18],"integrated":[19],"circuits.":[20],"Data":[21],"taken":[22],"on":[23],"devices":[25],"is":[26,37],"used":[27],"to":[28],"establish":[29],"dominant":[31],"failure":[32],"modes,":[33],"this":[35],"data":[36],"further":[38],"analyzed":[39],"using":[40],"one-sided":[41],"tolerance":[42],"factors":[43],"for":[44],"normal":[45],"distribution":[46],"statistical":[47],"analysis.":[48]},"counts_by_year":[],"updated_date":"2026-09-27T08:07:27.782135","created_date":"2016-06-24T00:00:00"}