{"id":"https://openalex.org/W2035449306","doi":"https://doi.org/10.1016/j.tsf.2004.10.015","title":"Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant","display_name":"Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant","publication_year":2004,"publication_date":"2004-11-12","ids":{"openalex":"https://openalex.org/W2035449306","doi":"https://doi.org/10.1016/j.tsf.2004.10.015","mag":"2035449306"},"language":"en","primary_location":{"id":"doi:10.1016/j.tsf.2004.10.015","doi":"https://doi.org/10.1016/j.tsf.2004.10.015","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.tsf.2004.10.015","pdf_url":null,"source":{"id":"https://openalex.org/S84339699","display_name":"Thin Solid Films","issn_l":"0040-6090","issn":["0040-6090","1879-2731"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Thin Solid Films","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5061558684","display_name":"Seong Keun Kim","orcid":"https://orcid.org/0000-0001-8712-7167","observed_orcids":["https://orcid.org/0000-0001-8712-7167"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong Keun Kim","raw_affiliation_strings":["School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027075775","display_name":"Cheol Seong Hwang","orcid":"https://orcid.org/0000-0002-6254-9758","observed_orcids":["https://orcid.org/0000-0002-6254-9758"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Cheol Seong Hwang","raw_affiliation_strings":["School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037469285","display_name":"Sang\u2010Hee Ko Park","orcid":"https://orcid.org/0000-0001-7165-8211","observed_orcids":["https://orcid.org/0000-0001-7165-8211"]},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang-Hee Ko Park","raw_affiliation_strings":["Micro-Electronics Technology Laboratory, ETRI 161 Kajong-Dong, Yusong-Gu, Taejon, 305-350, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micro-Electronics Technology Laboratory, ETRI 161 Kajong-Dong, Yusong-Gu, Taejon, 305-350, Republic of Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032531605","display_name":"Sun Jin Yun","orcid":"https://orcid.org/0000-0002-3665-0393","observed_orcids":["https://orcid.org/0000-0002-3665-0393"]},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sun Jin Yun","raw_affiliation_strings":["Micro-Electronics Technology Laboratory, ETRI 161 Kajong-Dong, Yusong-Gu, Taejon, 305-350, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micro-Electronics Technology Laboratory, ETRI 161 Kajong-Dong, Yusong-Gu, Taejon, 305-350, Republic of Korea","institution_ids":["https://openalex.org/I142401562"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5027075775"],"corresponding_institution_ids":["https://openalex.org/I139264467"],"apc_list":{"value":3120,"currency":"USD","value_usd":3120},"apc_paid":null,"fwci":2.5326,"has_fulltext":false,"cited_by_count":155,"citation_normalized_percentile":{"value":0.88501498,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":100},"biblio":{"volume":"478","issue":"1-2","first_page":"103","last_page":"108"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.5062999725341797,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.5062999725341797,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.4821999967098236,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.004100000020116568,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/zno-thin-films","display_name":"ZnO thin films","score":0.9700000286102295},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"atomic layer deposition","score":0.9950000047683716},{"id":"https://openalex.org/keywords/ozone-oxidant","display_name":"ozone oxidant","score":0.9649999737739563},{"id":"https://openalex.org/keywords/growth-rate-crystal-and-thin-film-growth","display_name":"growth rate (crystal and thin-film growth)","score":0.781000018119812},{"id":"https://openalex.org/keywords/c-axis-preferred-orientation","display_name":"c-axis preferred orientation","score":0.8510000109672546},{"id":"https://openalex.org/keywords/electrical-resistivity","display_name":"electrical resistivity","score":0.7850000262260437},{"id":"https://openalex.org/keywords/silicon-diffusion","display_name":"silicon diffusion","score":0.7960000038146973},{"id":"https://openalex.org/keywords/sio2-si-substrate","display_name":"SiO2/Si substrate","score":0.8479999899864197}],"concepts":[{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.8105500936508179},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6791452169418335},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.6457346677780151},{"id":"https://openalex.org/C535196362","wikidata":"https://www.wikidata.org/wiki/Q758","display_name":"Zinc","level":2,"score":0.6329335570335388},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5825504064559937},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.5537984371185303},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.5344110727310181},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5206324458122253},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.5180842876434326},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5105513334274292},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.48755186796188354},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.4207606613636017},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.37704795598983765},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.32012659311294556},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.26700296998023987},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.12406325340270996},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.tsf.2004.10.015","doi":"https://doi.org/10.1016/j.tsf.2004.10.015","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.tsf.2004.10.015","pdf_url":null,"source":{"id":"https://openalex.org/S84339699","display_name":"Thin Solid Films","issn_l":"0040-6090","issn":["0040-6090","1879-2731"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Thin Solid Films","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1971888064","https://openalex.org/W1979855902","https://openalex.org/W1995750048","https://openalex.org/W2003422256","https://openalex.org/W2012694724","https://openalex.org/W2013697109","https://openalex.org/W2031063876","https://openalex.org/W2041507881","https://openalex.org/W2052302093","https://openalex.org/W2069100752","https://openalex.org/W2099315705","https://openalex.org/W4232291333"],"related_works":["https://openalex.org/W2920828718","https://openalex.org/W2982082266","https://openalex.org/W2015926398","https://openalex.org/W2031143884","https://openalex.org/W1993679372","https://openalex.org/W2028330486","https://openalex.org/W1976499908","https://openalex.org/W2325956211","https://openalex.org/W3045759175","https://openalex.org/W2009626498"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":7},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":8},{"year":2020,"cited_by_count":10},{"year":2019,"cited_by_count":7},{"year":2018,"cited_by_count":7},{"year":2017,"cited_by_count":6},{"year":2016,"cited_by_count":6},{"year":2015,"cited_by_count":11},{"year":2014,"cited_by_count":15},{"year":2013,"cited_by_count":11},{"year":2012,"cited_by_count":5}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}