{"id":"https://openalex.org/W2034680282","doi":"https://doi.org/10.1109/iedm.2013.6724651","title":"Acoustically-engineered multi-port AlN-on-silicon resonators for accurate temperature sensing","display_name":"Acoustically-engineered multi-port AlN-on-silicon resonators for accurate temperature sensing","publication_year":2013,"publication_date":"2013-12-01","ids":{"openalex":"https://openalex.org/W2034680282","doi":"https://doi.org/10.1109/iedm.2013.6724651","mag":"2034680282"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.2013.6724651","doi":"https://doi.org/10.1109/iedm.2013.6724651","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2013.6724651","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE International Electron Devices Meeting","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036428386","display_name":"Roozbeh Tabrizian","orcid":"https://orcid.org/0000-0003-1245-8564","observed_orcids":["https://orcid.org/0000-0003-1245-8564"]},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Roozbeh Tabrizian","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA","Sch. of Electr. & Comput. Eng.,, Georgia Inst. of Technol., Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"Sch. of Electr. & Comput. Eng.,, Georgia Inst. of Technol., Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081523432","display_name":"Farrokh Ayazi","orcid":"https://orcid.org/0000-0002-4539-7393","observed_orcids":["https://orcid.org/0000-0002-4539-7393"]},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Farrokh Ayazi","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA","Sch. of Electr. & Comput. Eng.,, Georgia Inst. of Technol., Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"Sch. of Electr. & Comput. Eng.,, Georgia Inst. of Technol., Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":5.9452,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.96562228,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"18.1.1","last_page":"18.1.4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9878000020980835,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9878000020980835,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.01119999960064888,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11449","display_name":"Mechanical and Optical Resonators","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/temperature-sensing","display_name":"temperature sensing","score":0.7649999856948853},{"id":"https://openalex.org/keywords/temperature-coefficient-of-frequency","display_name":"temperature coefficient of frequency","score":0.9380000233650208},{"id":"https://openalex.org/keywords/beat-frequency","display_name":"beat frequency","score":0.5059999823570251},{"id":"https://openalex.org/keywords/silicon-microresonators","display_name":"silicon microresonators","score":0.7390000224113464}],"concepts":[{"id":"https://openalex.org/C97126364","wikidata":"https://www.wikidata.org/wiki/Q349669","display_name":"Resonator","level":2,"score":0.8872091770172119},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7109917402267456},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6185075044631958},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.6131856441497803},{"id":"https://openalex.org/C32802771","wikidata":"https://www.wikidata.org/wiki/Q2443617","display_name":"Port (circuit theory)","level":2,"score":0.598615825176239},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5305491089820862},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.5127988457679749},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.46791890263557434},{"id":"https://openalex.org/C97137487","wikidata":"https://www.wikidata.org/wiki/Q729138","display_name":"Integer (computer science)","level":2,"score":0.4670734703540802},{"id":"https://openalex.org/C139210041","wikidata":"https://www.wikidata.org/wiki/Q2145840","display_name":"Resonance (particle physics)","level":2,"score":0.4584801197052002},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.43938368558883667},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.4329833388328552},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39543989300727844},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.23831170797348022},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.21246713399887085},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1698942482471466},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14358243346214294},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.11310729384422302},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.0866609513759613},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.2013.6724651","doi":"https://doi.org/10.1109/iedm.2013.6724651","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2013.6724651","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE International Electron Devices Meeting","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1938254715","https://openalex.org/W2026260529","https://openalex.org/W2044761720","https://openalex.org/W2055944305","https://openalex.org/W2099539962","https://openalex.org/W2160503630","https://openalex.org/W4247586331","https://openalex.org/W6640481560"],"related_works":["https://openalex.org/W2053457424","https://openalex.org/W6989070759","https://openalex.org/W3126903387","https://openalex.org/W4294334408","https://openalex.org/W1602287635","https://openalex.org/W2576752932","https://openalex.org/W2032591987","https://openalex.org/W2295949699","https://openalex.org/W2917757000","https://openalex.org/W2248895287"],"abstract_inverted_index":{"This":[0],"paper":[1],"reports":[2],"on":[3,45],"a":[4,59,87],"novel":[5],"silicon":[6],"microresonator":[7,41],"that":[8],"is":[9],"acoustically":[10],"engineered":[11],"to":[12],"facilitate":[13],"simultaneous":[14],"yet":[15],"independent":[16],"piezoelectric":[17],"transduction":[18],"of":[19,30,62,83,90],"multiple":[20],"resonance":[21],"modes":[22,51,85],"with":[23,58,99],"large":[24],"difference":[25,61],"in":[26],"their":[27],"temperature":[28,98],"coefficient":[29],"frequency":[31,35,77],"(TCF)":[32],"and":[33,55,102],"integer":[34,81],"ratios.":[36],"A":[37,74],"three-port":[38],"aluminum-nitride-on-silicon":[39],"(AlN-on-Si)":[40],"prototype":[42],"implemented":[43],"based":[44],"this":[46],"technique":[47],"has":[48,86],"two":[49,70],"energy-trapped":[50],"at":[52],"109":[53],"MHz":[54],"218":[56],"MHz,":[57],"TCF":[60,89],"~7":[63],"ppm/\u00b0C,":[64,92],"which":[65],"are":[66],"separately":[67],"transduced":[68],"through":[69],"isolated":[71],"electrical":[72],"ports.":[73],"small":[75],"beat":[76],"extracted":[78],"from":[79],"an":[80],"combination":[82],"these":[84],"linear":[88],"~8300":[91],"suitable":[93],"for":[94],"sensing":[95],"the":[96],"resonator":[97],"high":[100],"accuracy":[101],"resolution.":[103]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":4}],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2016-06-24T00:00:00"}