{"id":"https://openalex.org/W2034475783","doi":"https://doi.org/10.1155/2001/18731","title":"Impact of the Stress on the Sub\u2010Micron N\u2010Metal Oxide Semiconductor Field Effect Transistor Characteristics","display_name":"Impact of the Stress on the Sub\u2010Micron N\u2010Metal Oxide Semiconductor Field Effect Transistor Characteristics","publication_year":2001,"publication_date":"2001-01-01","ids":{"openalex":"https://openalex.org/W2034475783","doi":"https://doi.org/10.1155/2001/18731","mag":"2034475783"},"language":"en","primary_location":{"id":"doi:10.1155/2001/18731","doi":"https://doi.org/10.1155/2001/18731","is_oa":true,"landing_page_url":"https://doi.org/10.1155/2001/18731","pdf_url":"https://downloads.hindawi.com/journals/apec/2001/018731.pdf","source":{"id":"https://openalex.org/S67485347","display_name":"Active and Passive Electronic Components","issn_l":"0882-7516","issn":["0882-7516","1026-7034","1563-5031"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","jufo-1","norway-1","poland-40","russia-white-list-3"],"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869","https://openalex.org/P4310320595"],"host_organization_lineage_names":["Hindawi Publishing Corporation","Wiley"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Active and Passive Electronic Components","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","datacite","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://downloads.hindawi.com/journals/apec/2001/018731.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5088409174","display_name":"R. Marrakh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I99297268","display_name":"University of Hassan II Casablanca","ror":"https://ror.org/001q4kn48","country_code":"MA","type":"education","lineage":["https://openalex.org/I99297268"]}],"countries":["MA"],"is_corresponding":false,"raw_author_name":"R. Marrakh","raw_affiliation_strings":["Laboratoire de Physique des Mat\u00e9riaux et de Micro\u00e9lectronique, Universit\u00e9 Hassan II A\u00efn Chok Facult\u00e9 des Sciences, Kin8, Route d'El Jadida, BP 5366 Ma\u00e2rif, Casablanca"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Physique des Mat\u00e9riaux et de Micro\u00e9lectronique, Universit\u00e9 Hassan II A\u00efn Chok Facult\u00e9 des Sciences, Kin8, Route d'El Jadida, BP 5366 Ma\u00e2rif, Casablanca","institution_ids":["https://openalex.org/I99297268"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064876605","display_name":"A. Bouhdada","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I99297268","display_name":"University of Hassan II Casablanca","ror":"https://ror.org/001q4kn48","country_code":"MA","type":"education","lineage":["https://openalex.org/I99297268"]}],"countries":["MA"],"is_corresponding":true,"raw_author_name":"A. Bouhdada","raw_affiliation_strings":["Laboratoire de Physique des Mat\u00e9riaux et de Micro\u00e9lectronique, Universit\u00e9 Hassan II A\u00efn Chok Facult\u00e9 des Sciences, Kin8, Route d'El Jadida, BP 5366 Ma\u00e2rif, Casablanca"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Physique des Mat\u00e9riaux et de Micro\u00e9lectronique, Universit\u00e9 Hassan II A\u00efn Chok Facult\u00e9 des Sciences, Kin8, Route d'El Jadida, BP 5366 Ma\u00e2rif, Casablanca","institution_ids":["https://openalex.org/I99297268"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5064876605"],"corresponding_institution_ids":["https://openalex.org/I99297268"],"apc_list":{"value":1000,"currency":"USD","value_usd":1000},"apc_paid":{"value":1000,"currency":"USD","value_usd":1000},"fwci":0.801,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.74489017,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"24","issue":"3","first_page":"187","last_page":"199"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8140000104904175,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8140000104904175,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.1509999930858612,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0026000000070780516,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hot-carrier-stress","display_name":"hot carrier stress","score":0.8740000128746033},{"id":"https://openalex.org/keywords/short-channel-mosfet","display_name":"short-channel MOSFET","score":0.8109999895095825},{"id":"https://openalex.org/keywords/interface-states","display_name":"interface states","score":0.8140000104904175},{"id":"https://openalex.org/keywords/interfacial-charge-density","display_name":"interface charge density","score":0.8629999756813049},{"id":"https://openalex.org/keywords/drain-current-degradation","display_name":"drain current degradation","score":0.8709999918937683},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.8199999928474426},{"id":"https://openalex.org/keywords/source-drain-resistance","display_name":"source/drain resistance","score":0.7110000252723694},{"id":"https://openalex.org/keywords/drain-current-modeling","display_name":"drain current model","score":0.7549999952316284}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.8953195810317993},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7165824770927429},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6942619681358337},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6772445440292358},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5464767217636108},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5231455564498901},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5167921781539917},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5056264400482178},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5049992203712463},{"id":"https://openalex.org/C150708132","wikidata":"https://www.wikidata.org/wiki/Q744771","display_name":"Charge density","level":2,"score":0.43693360686302185},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3165343105792999},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2564850151538849},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1704188585281372},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11988699436187744},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07944023609161377},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":4,"locations":[{"id":"doi:10.1155/2001/18731","doi":"https://doi.org/10.1155/2001/18731","is_oa":true,"landing_page_url":"https://doi.org/10.1155/2001/18731","pdf_url":"https://downloads.hindawi.com/journals/apec/2001/018731.pdf","source":{"id":"https://openalex.org/S67485347","display_name":"Active and Passive Electronic Components","issn_l":"0882-7516","issn":["0882-7516","1026-7034","1563-5031"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","jufo-1","norway-1","poland-40","russia-white-list-3"],"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869","https://openalex.org/P4310320595"],"host_organization_lineage_names":["Hindawi Publishing Corporation","Wiley"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Active and Passive Electronic Components","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:a78955e5dcbd465c9d9ca7d9dc40db4e","doi":null,"is_oa":true,"landing_page_url":"https://doaj.org/article/a78955e5dcbd465c9d9ca7d9dc40db4e","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Active and Passive Electronic Components, Vol 24, Iss 3, Pp 187-199 (2001)","raw_type":"article"},{"id":"doi:10.60692/9srtf-0n755","doi":"https://doi.org/10.60692/9srtf-0n755","is_oa":true,"landing_page_url":"https://doi.org/10.60692/9srtf-0n755","pdf_url":null,"source":{"id":"https://openalex.org/S7407051682","display_name":"Greater South Information System","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"article-journal"},{"id":"doi:10.60692/mnqrv-arc54","doi":"https://doi.org/10.60692/mnqrv-arc54","is_oa":true,"landing_page_url":"https://doi.org/10.60692/mnqrv-arc54","pdf_url":null,"source":{"id":"https://openalex.org/S7407051682","display_name":"Greater South Information System","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"article-journal"}],"best_oa_location":{"id":"doi:10.1155/2001/18731","doi":"https://doi.org/10.1155/2001/18731","is_oa":true,"landing_page_url":"https://doi.org/10.1155/2001/18731","pdf_url":"https://downloads.hindawi.com/journals/apec/2001/018731.pdf","source":{"id":"https://openalex.org/S67485347","display_name":"Active and Passive Electronic Components","issn_l":"0882-7516","issn":["0882-7516","1026-7034","1563-5031"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","jufo-1","norway-1","poland-40","russia-white-list-3"],"host_organization":"https://openalex.org/P4310319869","host_organization_name":"Hindawi Publishing Corporation","host_organization_lineage":["https://openalex.org/P4310319869","https://openalex.org/P4310320595"],"host_organization_lineage_names":["Hindawi Publishing Corporation","Wiley"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Active and Passive Electronic Components","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2034475783.pdf","grobid_xml":"https://content.openalex.org/works/W2034475783.grobid-xml"},"referenced_works_count":2,"referenced_works":["https://openalex.org/W1971066709","https://openalex.org/W4214518966"],"related_works":["https://openalex.org/W1577778892","https://openalex.org/W2100759207","https://openalex.org/W1999967947","https://openalex.org/W2075445529","https://openalex.org/W1966045534","https://openalex.org/W6884578449","https://openalex.org/W2028827961","https://openalex.org/W2041961622","https://openalex.org/W4242451400","https://openalex.org/W2158675572"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"present":[4],"a":[5,36,67],"drain":[6,44,72],"current":[7,73],"model":[8],"for":[9],"stressed":[10],"short\u2010channel":[11],"MOSFET\u2032s.":[12],"Stress":[13],"conditions":[14],"are":[15,25,33,46],"chosen":[16],"so":[17],"that":[18],"the":[19,51,54,62,71],"interface":[20,55],"states":[21],"generated":[22,29,58],"by":[23,35],"hot\u2010carriers":[24],"dominant.":[26],"The":[27,40],"defects":[28],"during":[30,59],"stress":[31,75],"time":[32],"simulated":[34],"spatio\u2010temporal":[37],"gaussian":[38],"distribution.":[39],"parasitic":[41],"source":[42],"and":[43],"resistances":[45],"included.":[47],"We":[48],"also":[49],"investigate":[50],"impact":[52],"of":[53,70],"charge":[56],"density,":[57],"stress,":[60],"on":[61],"transconductance.":[63],"Simulation":[64],"results":[65],"show":[66],"significant":[68],"degradation":[69],"versus":[74],"time.":[76]},"counts_by_year":[],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2016-06-24T00:00:00"}