{"id":"https://openalex.org/W2033907418","doi":"https://doi.org/10.1109/tdmr.2007.897517","title":"A Comprehensive Study on the Soft-Error Rate of Flip-Flops From 90-nm Production Libraries","display_name":"A Comprehensive Study on the Soft-Error Rate of Flip-Flops From 90-nm Production Libraries","publication_year":2007,"publication_date":"2007-03-01","ids":{"openalex":"https://openalex.org/W2033907418","doi":"https://doi.org/10.1109/tdmr.2007.897517","mag":"2033907418"},"language":"en","primary_location":{"id":"doi:10.1109/tdmr.2007.897517","doi":"https://doi.org/10.1109/tdmr.2007.897517","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tdmr.2007.897517","pdf_url":null,"source":{"id":"https://openalex.org/S128536549","display_name":"IEEE Transactions on Device and Materials Reliability","issn_l":"1530-4388","issn":["1530-4388","1558-2574"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Device and Materials Reliability","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064322830","display_name":"Tino Heijmen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I109147379","display_name":"NXP (Netherlands)","ror":"https://ror.org/059be4e97","country_code":"NL","type":"company","lineage":["https://openalex.org/I109147379"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Tino Heijmen","raw_affiliation_strings":["NXP Semiconductors, Eindhoven, Netherlands","NXP Semiconductors, Eindhoven"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Eindhoven, Netherlands","institution_ids":["https://openalex.org/I109147379"]},{"raw_affiliation_string":"NXP Semiconductors, Eindhoven","institution_ids":["https://openalex.org/I109147379"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112987137","display_name":"P. Roche","orcid":"https://orcid.org/0009-0003-8024-7280","observed_orcids":["https://orcid.org/0009-0003-8024-7280"]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Philippe Roche","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079784438","display_name":"Gilles Gasiot","orcid":"https://orcid.org/0000-0002-8830-5014","observed_orcids":["https://orcid.org/0000-0002-8830-5014"]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Gilles Gasiot","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008328477","display_name":"Keith R. Forbes","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Keith R. Forbes","raw_affiliation_strings":["Freesclae Semiconductor, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Freesclae Semiconductor, Austin, TX, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009597226","display_name":"Damien Giot","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Damien Giot","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":6.7209,"has_fulltext":false,"cited_by_count":75,"citation_normalized_percentile":{"value":0.9672829,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":87,"max":99},"biblio":{"volume":"7","issue":"1","first_page":"84","last_page":"96"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/soft-error-rate","display_name":"soft error rate","score":0.9279999732971191},{"id":"https://openalex.org/keywords/flip-flops","display_name":"flip-flops","score":0.9990000128746033},{"id":"https://openalex.org/keywords/90-nm-cmos","display_name":"90 nm CMOS","score":0.9660000205039978},{"id":"https://openalex.org/keywords/neutron-induced-soft-errors","display_name":"neutron-induced soft errors","score":0.996999979019165},{"id":"https://openalex.org/keywords/process-variation","display_name":"process variation","score":0.6510000228881836},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.5019999742507935},{"id":"https://openalex.org/keywords/drive-strength","display_name":"drive strength","score":0.925000011920929},{"id":"https://openalex.org/keywords/cell-height","display_name":"cell height","score":0.7409999966621399},{"id":"https://openalex.org/keywords/integrated-circuit-reliability","display_name":"integrated circuit reliability","score":0.6230000257492065}],"concepts":[{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.8592288494110107},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.7791736721992493},{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.6643701791763306},{"id":"https://openalex.org/C3826847","wikidata":"https://www.wikidata.org/wiki/Q188768","display_name":"FLOPS","level":2,"score":0.6517800688743591},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.539649486541748},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.45251065492630005},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4283205270767212},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3699157238006592},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.34076130390167236},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3298795819282532},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.325227290391922},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24936065077781677},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.20702990889549255},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.11931279301643372}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tdmr.2007.897517","doi":"https://doi.org/10.1109/tdmr.2007.897517","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tdmr.2007.897517","pdf_url":null,"source":{"id":"https://openalex.org/S128536549","display_name":"IEEE Transactions on Device and Materials Reliability","issn_l":"1530-4388","issn":["1530-4388","1558-2574"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Device and Materials Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":28,"referenced_works":["https://openalex.org/W997480094","https://openalex.org/W1564617507","https://openalex.org/W1819167510","https://openalex.org/W1979668030","https://openalex.org/W2013185880","https://openalex.org/W2095683891","https://openalex.org/W2096927458","https://openalex.org/W2099534042","https://openalex.org/W2099569658","https://openalex.org/W2100192071","https://openalex.org/W2100250713","https://openalex.org/W2127365946","https://openalex.org/W2134490163","https://openalex.org/W2139004760","https://openalex.org/W2141401334","https://openalex.org/W2142358791","https://openalex.org/W2144482650","https://openalex.org/W2147450685","https://openalex.org/W2153448314","https://openalex.org/W2162465831","https://openalex.org/W2165911142","https://openalex.org/W2167002145","https://openalex.org/W2168525368","https://openalex.org/W2169213530","https://openalex.org/W2169527496","https://openalex.org/W2544676522","https://openalex.org/W3187317723","https://openalex.org/W4229966209"],"related_works":["https://openalex.org/W2095683891","https://openalex.org/W2149032943","https://openalex.org/W2621393226","https://openalex.org/W2038480737","https://openalex.org/W2009925007","https://openalex.org/W2119795588","https://openalex.org/W2163234576","https://openalex.org/W7160562771","https://openalex.org/W4225309503","https://openalex.org/W2033236854"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,53,59,100,161],"study":[4],"using":[5],"alpha-":[6,45],"and":[7,40,46,64,84,90,125,157],"neutron-accelerated":[8],"tests":[9],"to":[10,98,118,182],"characterize":[11],"the":[12,44,47,71,82,85,92,107,113,122,127,132,137,143,172,175],"soft":[13],"error":[14],"rate":[15],"(SER)":[16],"of":[17,50,102,109,136,148,163,174,177],"flip-flops":[18],"(FFs)":[19],"that":[20,70],"are":[21,88],"used":[22],"in":[23,32,154,180],"90-nm":[24,55],"CMOS":[25],"production":[26],"designs.":[27],"The":[28,168],"investigated":[29,138],"FFs":[30,51,139],"differ":[31],"circuit":[33],"schematic,":[34],"threshold":[35],"voltage":[36],"(VT),":[37],"drive":[38],"strength,":[39],"cell":[41],"height.":[42],"Both":[43],"neutron-induced":[48],"SER":[49,73,115,133,145,179],"on":[52,62,112,121,126],"dedicated":[54],"test":[56],"chip":[57],"showed":[58],"strong":[60],"dependence":[61],"clock":[63],"data":[65,123],"state.":[66],"Theoretical":[67],"results":[68,170],"demonstrate":[69],"FF":[72,114,178],"is":[74,96,116,140],"modeled":[75],"best":[76],"if":[77,91],"particle":[78],"hits":[79],"at":[80],"both":[81],"NMOS":[83],"PMOS":[86],"drains":[87],"included":[89],"resulting":[93],"current":[94],"pulse":[95],"assumed":[97],"have":[99],"width":[101],"approximately":[103],"5":[104],"ps.":[105],"Furthermore,":[106],"impact":[108],"process":[110],"variations":[111],"shown":[117],"depend":[119],"strongly":[120],"state":[124],"applied":[128],"pulsewidth.":[129],"On":[130],"average,":[131],"per":[134,146,165],"bit":[135,147],"higher":[141],"than":[142],"typical":[144],"unprotected":[149],"static":[150],"random":[151],"access":[152],"memories":[153],"90":[155],"nm":[156],"has":[158],"increased":[159],"with":[160],"factor":[162],"3":[164],"technology":[166],"generation.":[167],"reported":[169],"illustrate":[171],"importance":[173],"characterization":[176],"order":[181],"design":[183],"reliable":[184],"integrated":[185],"circuits.":[186]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":6},{"year":2015,"cited_by_count":13},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":6},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}