{"id":"https://openalex.org/W2029536697","doi":"https://doi.org/10.1143/jjap.31.l508","title":"Lattice Parameter Control of Epitaxially Grown Hexagonal LaF3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF3","display_name":"Lattice Parameter Control of Epitaxially Grown Hexagonal LaF3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF3","publication_year":1992,"publication_date":"1992-04-01","ids":{"openalex":"https://openalex.org/W2029536697","doi":"https://doi.org/10.1143/jjap.31.l508","mag":"2029536697"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.31.l508","doi":"https://doi.org/10.1143/jjap.31.l508","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.31.l508","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.31.L508/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.31.L508/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5026244431","display_name":"Kouji Aizawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kouji Aizawa","raw_affiliation_strings":["Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031460733","display_name":"H. Ricard","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Herve Ricard Herve Ricard","raw_affiliation_strings":["Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111651938","display_name":"Hiroshi Ishiwara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Ishiwara Hiroshi Ishiwara","raw_affiliation_strings":["Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I114531698"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.4636,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.62060317,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":"31","issue":"4B","first_page":"L508","last_page":"L508"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.70169997215271,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.70169997215271,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12646","display_name":"Inorganic Fluorides and Related Compounds","score":0.10329999774694443,"subfield":{"id":"https://openalex.org/subfields/1604","display_name":"Inorganic Chemistry"},"field":{"id":"https://openalex.org/fields/16","display_name":"Chemistry"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.0502999983727932,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/lattice-matching","display_name":"lattice matching","score":0.8100000023841858},{"id":"https://openalex.org/keywords/epitaxial-growth","display_name":"epitaxial growth","score":0.9509999752044678},{"id":"https://openalex.org/keywords/gaas-111-b-substrate","display_name":"GaAs(111)B substrate","score":0.9580000042915344},{"id":"https://openalex.org/keywords/rutherford-backscattering-spectrometry","display_name":"Rutherford backscattering spectrometry","score":0.7289999723434448},{"id":"https://openalex.org/keywords/mixed-fluorides","display_name":"mixed fluorides","score":0.3400000035762787}],"concepts":[{"id":"https://openalex.org/C37243968","wikidata":"https://www.wikidata.org/wiki/Q648961","display_name":"Orthorhombic crystal system","level":3,"score":0.8959153294563293},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7939326763153076},{"id":"https://openalex.org/C2781204021","wikidata":"https://www.wikidata.org/wiki/Q6497091","display_name":"Lattice (music)","level":2,"score":0.6366268992424011},{"id":"https://openalex.org/C128765274","wikidata":"https://www.wikidata.org/wiki/Q663314","display_name":"Hexagonal crystal system","level":2,"score":0.6319528222084045},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6277428865432739},{"id":"https://openalex.org/C132612359","wikidata":"https://www.wikidata.org/wiki/Q625641","display_name":"Lattice constant","level":3,"score":0.5691221952438354},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.522110104560852},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.5189706683158875},{"id":"https://openalex.org/C115624301","wikidata":"https://www.wikidata.org/wiki/Q895901","display_name":"Crystal structure","level":2,"score":0.4278477132320404},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3501826524734497},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3248598575592041},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.2538073658943176},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.20733633637428284},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.20381462574005127},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.15048006176948547},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08000960946083069},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1143/jjap.31.l508","doi":"https://doi.org/10.1143/jjap.31.l508","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.31.l508","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.31.L508/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},{"id":"mag:2907707812","doi":null,"is_oa":false,"landing_page_url":"http://jglobal.jst.go.jp/public/20090422/200902093835852660","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null},{"id":"mag:3033811735","doi":null,"is_oa":false,"landing_page_url":"https://jglobal.jst.go.jp/detail?JGLOBAL_ID=200902093835852660","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Japanese Journal of Applied Physics. Part 2. Letters","raw_type":null}],"best_oa_location":{"id":"doi:10.1143/jjap.31.l508","doi":"https://doi.org/10.1143/jjap.31.l508","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.31.l508","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.31.L508/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2029536697.pdf","grobid_xml":"https://content.openalex.org/works/W2029536697.grobid-xml"},"referenced_works_count":5,"referenced_works":["https://openalex.org/W1620484275","https://openalex.org/W2059361471","https://openalex.org/W2062892223","https://openalex.org/W2068340005","https://openalex.org/W2084306821"],"related_works":["https://openalex.org/W2907707812","https://openalex.org/W2019896906","https://openalex.org/W2611632751","https://openalex.org/W1792521018","https://openalex.org/W2164276764","https://openalex.org/W1979697179","https://openalex.org/W1983166467","https://openalex.org/W2061672047","https://openalex.org/W2151025870","https://openalex.org/W2062892223"],"abstract_inverted_index":{"Control":[0],"of":[1,4,14,24,38,50,57,73,92,98],"lattice":[2,36,100],"parameters":[3],"hexagonal":[5],"LaF3":[6],"thin":[7],"films":[8,26,76],"has":[9,31,60],"been":[10,32,62],"attempted":[11],"by":[12],"incorporation":[13],"orthorhombic":[15],"YF3,":[16],"in":[17],"order":[18],"to":[19,48,96],"realize":[20],"lattice-matched":[21],"epitaxial":[22,75],"growth":[23],"the":[25,35,39,53,69,74,89,99],"on":[27,77],"GaAs(111)B":[28,78],"substrates.":[29],"It":[30,59],"found":[33,63],"that":[34,49,68,97],"parameter":[37],"Y":[40],"x":[41,56],"La1-x":[42],"F3":[43],"film":[44],"is":[45,80,86,94],"equivalently":[46],"matched":[47],"GaAs(111)":[51],"around":[52],"mixing":[54,90],"ratio":[55,91],"0.55.":[58],"also":[61],"from":[64],"Rutherford":[65],"backscattering":[66],"spectroscopy":[67],"channeling":[70],"minimum":[71],"yield":[72],"substrates":[79],"relatively":[81],"low":[82],"(the":[83],"best":[84],"value":[85],"0.36),":[87],"when":[88],"YF3":[93],"close":[95],"matching":[101],"condition.":[102]},"counts_by_year":[{"year":2017,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}